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Title: Metal-insulator transition in (111) SrRuO 3 ultrathin films

Abstract

(111)-oriented transition metal oxide thin films provide a route to developing oxide-based topological quantum materials, but the epitaxial growth is challenging. Here, we present the thickness-dependent electronic and magnetic phase diagrams of coherently strained, phase pure (111)-oriented SrRuO 3 epitaxial films grown on (111) SrTiO 3 substrates using pulsed laser deposition. With decreasing film thickness, it is found that both the metal-to-insulator and magnetic phase transitions occur at the same thickness of 4–5 nm for films grown along both the (111) and the (001) directions. The character of the transport near the metal-insulator transition is, however, distinct for the different directions, which is attributed to the increased electron-electron correlation for (111) SrRuO 3. The results presented here illustrate both the broad challenges as well as the possibilities in modifying correlated materials using dimensional tuning of electronic and magnetic properties.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1564205
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Rastogi, Ankur, Brahlek, Matthew, Ok, Jong Mok, Liao, Zhaoliang, Sohn, Changhee, Feldman, Samuel, and Lee, Ho Nyung. Metal-insulator transition in (111) SrRuO3 ultrathin films. United States: N. p., 2019. Web. doi:10.1063/1.5109374.
Rastogi, Ankur, Brahlek, Matthew, Ok, Jong Mok, Liao, Zhaoliang, Sohn, Changhee, Feldman, Samuel, & Lee, Ho Nyung. Metal-insulator transition in (111) SrRuO3 ultrathin films. United States. doi:10.1063/1.5109374.
Rastogi, Ankur, Brahlek, Matthew, Ok, Jong Mok, Liao, Zhaoliang, Sohn, Changhee, Feldman, Samuel, and Lee, Ho Nyung. Mon . "Metal-insulator transition in (111) SrRuO3 ultrathin films". United States. doi:10.1063/1.5109374. https://www.osti.gov/servlets/purl/1564205.
@article{osti_1564205,
title = {Metal-insulator transition in (111) SrRuO3 ultrathin films},
author = {Rastogi, Ankur and Brahlek, Matthew and Ok, Jong Mok and Liao, Zhaoliang and Sohn, Changhee and Feldman, Samuel and Lee, Ho Nyung},
abstractNote = {(111)-oriented transition metal oxide thin films provide a route to developing oxide-based topological quantum materials, but the epitaxial growth is challenging. Here, we present the thickness-dependent electronic and magnetic phase diagrams of coherently strained, phase pure (111)-oriented SrRuO3 epitaxial films grown on (111) SrTiO3 substrates using pulsed laser deposition. With decreasing film thickness, it is found that both the metal-to-insulator and magnetic phase transitions occur at the same thickness of 4–5 nm for films grown along both the (111) and the (001) directions. The character of the transport near the metal-insulator transition is, however, distinct for the different directions, which is attributed to the increased electron-electron correlation for (111) SrRuO3. The results presented here illustrate both the broad challenges as well as the possibilities in modifying correlated materials using dimensional tuning of electronic and magnetic properties.},
doi = {10.1063/1.5109374},
journal = {APL Materials},
number = 9,
volume = 7,
place = {United States},
year = {2019},
month = {9}
}

Journal Article:
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