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Title: Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Abstract

Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Here, two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS 2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS 2and WS 2monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [1]
  1. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  3. Univ. of California, Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1564027
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Science
Additional Journal Information:
Journal Volume: 364; Journal Issue: 6439; Journal ID: ISSN 0036-8075
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lien, Der-Hsien, Uddin, Shiekh Zia, Yeh, Matthew, Amani, Matin, Kim, Hyungjin, Ager, III, Joel W., Yablonovitch, Eli, and Javey, Ali. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. United States: N. p., 2019. Web. doi:10.1126/science.aaw8053.
Lien, Der-Hsien, Uddin, Shiekh Zia, Yeh, Matthew, Amani, Matin, Kim, Hyungjin, Ager, III, Joel W., Yablonovitch, Eli, & Javey, Ali. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. United States. doi:10.1126/science.aaw8053.
Lien, Der-Hsien, Uddin, Shiekh Zia, Yeh, Matthew, Amani, Matin, Kim, Hyungjin, Ager, III, Joel W., Yablonovitch, Eli, and Javey, Ali. Fri . "Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors". United States. doi:10.1126/science.aaw8053.
@article{osti_1564027,
title = {Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors},
author = {Lien, Der-Hsien and Uddin, Shiekh Zia and Yeh, Matthew and Amani, Matin and Kim, Hyungjin and Ager, III, Joel W. and Yablonovitch, Eli and Javey, Ali},
abstractNote = {Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Here, two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2and WS2monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.},
doi = {10.1126/science.aaw8053},
journal = {Science},
number = 6439,
volume = 364,
place = {United States},
year = {2019},
month = {5}
}

Journal Article:
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Works referenced in this record:

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