Strain tuning of excitons in monolayer
Abstract
Here, we investigate excitonic absorption and emission in monolayer (1L) WSe2 under tensile strain. We observe a redshift of 100 meV in the A exciton energy and a decrease of 25 meV in its estimated binding energy under 2.1% strain. Surprisingly, the linewidth of the A exciton decreases by almost a factor of two under strain, from 42 to 24 meV at room temperature. We explain this effect as the result of suppression of phonon-mediated exciton scattering channels. We show that such a suppression results from the relative shift under strain of a secondary valley in the conduction band that is nearly degenerate with the K valley where the A exciton is formed.
- Authors:
-
- Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1562880
- Alternate Identifier(s):
- OSTI ID: 1474105; OSTI ID: 1474195
- Grant/Contract Number:
- DMR-1420634; AC02-76SF00515
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 98; Journal Issue: 11; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; excitons; phonons; 2-dimensional systems; transition-metal dichalcogenides; monolayer films; optical absorption and photoluminescence spectroscopy; strain engineering
Citation Formats
Aslan, Ozgur Burak, Deng, Minda, and Heinz, Tony F. Strain tuning of excitons in monolayer WSe2. United States: N. p., 2018.
Web. doi:10.1103/physrevb.98.115308.
Aslan, Ozgur Burak, Deng, Minda, & Heinz, Tony F. Strain tuning of excitons in monolayer WSe2. United States. https://doi.org/10.1103/physrevb.98.115308
Aslan, Ozgur Burak, Deng, Minda, and Heinz, Tony F. Thu .
"Strain tuning of excitons in monolayer WSe2". United States. https://doi.org/10.1103/physrevb.98.115308. https://www.osti.gov/servlets/purl/1562880.
@article{osti_1562880,
title = {Strain tuning of excitons in monolayer WSe2},
author = {Aslan, Ozgur Burak and Deng, Minda and Heinz, Tony F.},
abstractNote = {Here, we investigate excitonic absorption and emission in monolayer (1L) WSe2 under tensile strain. We observe a redshift of 100 meV in the A exciton energy and a decrease of 25 meV in its estimated binding energy under 2.1% strain. Surprisingly, the linewidth of the A exciton decreases by almost a factor of two under strain, from 42 to 24 meV at room temperature. We explain this effect as the result of suppression of phonon-mediated exciton scattering channels. We show that such a suppression results from the relative shift under strain of a secondary valley in the conduction band that is nearly degenerate with the K valley where the A exciton is formed.},
doi = {10.1103/physrevb.98.115308},
journal = {Physical Review B},
number = 11,
volume = 98,
place = {United States},
year = {Thu Sep 27 00:00:00 EDT 2018},
month = {Thu Sep 27 00:00:00 EDT 2018}
}
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Figures / Tables:
FIG. 1: (a) Absorption spectra of 2.1% strained and unstrained 1L WSe2. (b) Strain-dependent PL spectra of 1L WSe2 (offset). Strain dependence of the strength of (c) absorption and (d) PL due to the $A$1s exciton; (e) $E$2s−1s , and A exciton binding energy; (f) $E$B−A. Hollow circles are datamore »
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Works referenced in this record:
Strain engineering of WS 2 , WSe 2 , and WTe 2
journal, January 2014
- Amin, B.; Kaloni, T. P.; Schwingenschlögl, U.
- RSC Advances, Vol. 4, Issue 65
Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS
journal, September 2013
- Zhu, C. R.; Wang, G.; Liu, B. L.
- Physical Review B, Vol. 88, Issue 12
Role of strain on electronic and mechanical response of semiconducting transition-metal dichalcogenide monolayers: An ab-initio study
journal, June 2014
- Guzman, David M.; Strachan, Alejandro
- Journal of Applied Physics, Vol. 115, Issue 24
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe 2
journal, July 2014
- Desai, Sujay B.; Seol, Gyungseon; Kang, Jeong Seuk
- Nano Letters, Vol. 14, Issue 8
Spin–orbit coupling in the band structure of monolayer WSe 2
journal, April 2015
- Le, Duy; Barinov, Alexei; Preciado, Edwin
- Journal of Physics: Condensed Matter, Vol. 27, Issue 18
Controlling the Electronic Structures and Properties of in-Plane Transition-Metal Dichalcogenides Quantum Wells
journal, November 2015
- Wei, Wei; Dai, Ying; Niu, Chengwang
- Scientific Reports, Vol. 5, Issue 1
Strain Engineering and Raman Spectroscopy of Monolayer Transition Metal Dichalcogenides
journal, July 2018
- Dadgar, A. M.; Scullion, D.; Kang, K.
- Chemistry of Materials, Vol. 30, Issue 15
Excitonic Linewidth Approaching the Homogeneous Limit in -Based van der Waals Heterostructures
journal, May 2017
- Cadiz, F.; Courtade, E.; Robert, C.
- Physical Review X, Vol. 7, Issue 2
Interfacial Sliding and Buckling of Monolayer Graphene on a Stretchable Substrate
journal, August 2013
- Jiang, Tao; Huang, Rui; Zhu, Yong
- Advanced Functional Materials, Vol. 24, Issue 3
Strain Control of Exciton–Phonon Coupling in Atomically Thin Semiconductors
journal, February 2018
- Niehues, Iris; Schmidt, Robert; Drüppel, Matthias
- Nano Letters, Vol. 18, Issue 3
Strain-modulated excitonic gaps in mono- and bi-layer MoSe 2
journal, July 2016
- Ji, Jianting; Zhang, Anmin; Xia, Tianlong
- Chinese Physics B, Vol. 25, Issue 7
Intrinsic electrical transport properties of monolayer silicene and MoS from first principles
journal, March 2013
- Li, Xiaodong; Mullen, Jeffrey T.; Jin, Zhenghe
- Physical Review B, Vol. 87, Issue 11
Strain relaxation and exciton localization effects on the Stokes shift in InAsxP1−x/InP multiple quantum wells
journal, March 1998
- Aı̈t-Ouali, A.; Yip, R. Y. -F.; Brebner, J. L.
- Journal of Applied Physics, Vol. 83, Issue 6
Elucidating the Optical Properties of Novel Heterolayered Materials Based on MoTe 2 –InN for Photovoltaic Applications
journal, May 2015
- Villegas, Cesar E. P.; Rocha, A. R.
- The Journal of Physical Chemistry C, Vol. 119, Issue 21
k · p theory for two-dimensional transition metal dichalcogenide semiconductors
journal, April 2015
- Kormányos, Andor; Burkard, Guido; Gmitra, Martin
- 2D Materials, Vol. 2, Issue 2
Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides
journal, September 2015
- Moody, Galan; Kavir Dass, Chandriker; Hao, Kai
- Nature Communications, Vol. 6, Issue 1
Exciton broadening and band renormalization due to Dexter-like intervalley coupling
journal, February 2018
- Bernal-Villamil, Ivan; Berghäuser, Gunnar; Selig, Malte
- 2D Materials, Vol. 5, Issue 2
Coulomb engineering of the bandgap and excitons in two-dimensional materials
journal, May 2017
- Raja, Archana; Chaves, Andrey; Yu, Jaeeun
- Nature Communications, Vol. 8, Issue 1
Bandgap Engineering of Strained Monolayer and Bilayer MoS2
journal, July 2013
- Conley, Hiram J.; Wang, Bin; Ziegler, Jed I.
- Nano Letters, Vol. 13, Issue 8, p. 3626-3630
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
journal, November 2016
- Selig, Malte; Berghäuser, Gunnar; Raja, Archana
- Nature Communications, Vol. 7, Issue 1
Magnetooptics of Exciton Rydberg States in a Monolayer Semiconductor
journal, February 2018
- Stier, A. V.; Wilson, N. P.; Velizhanin, K. A.
- Physical Review Letters, Vol. 120, Issue 5
Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors
journal, January 1993
- Yang, Fang; Wilkinson, M.; Austin, E. J.
- Physical Review Letters, Vol. 70, Issue 3
Probing the Influence of Dielectric Environment on Excitons in Monolayer WSe 2 : Insight from High Magnetic Fields
journal, October 2016
- Stier, Andreas V.; Wilson, Nathan P.; Clark, Genevieve
- Nano Letters, Vol. 16, Issue 11
Precise and reversible band gap tuning in single-layer MoSe 2 by uniaxial strain
journal, January 2016
- Island, Joshua O.; Kuc, Agnieszka; Diependaal, Erik H.
- Nanoscale, Vol. 8, Issue 5
Stretching and Breaking of Ultrathin MoS 2
journal, November 2011
- Bertolazzi, Simone; Brivio, Jacopo; Kis, Andras
- ACS Nano, Vol. 5, Issue 12
Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides
journal, July 2014
- Jin, Zhenghe; Li, Xiaodong; Mullen, Jeffrey T.
- Physical Review B, Vol. 90, Issue 4
Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers
journal, July 2017
- Ajayi, Obafunso A.; Ardelean, Jenny V.; Shepard, Gabriella D.
- 2D Materials, Vol. 4, Issue 3
Tightly Bound Excitons in Monolayer
journal, July 2014
- He, Keliang; Kumar, Nardeep; Zhao, Liang
- Physical Review Letters, Vol. 113, Issue 2
Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
journal, April 2013
- Zeng, Hualing; Liu, Gui-Bin; Dai, Junfeng
- Scientific Reports, Vol. 3, Issue 1
Effect of pressure on the low-temperature exciton absorption in GaAs
journal, May 1990
- Goi, A. R.; Cantarero, A.; Syassen, K.
- Physical Review B, Vol. 41, Issue 14
Origin of Indirect Optical Transitions in Few-Layer MoS 2 , WS 2 , and WSe 2
journal, October 2013
- Zhao, Weijie; Ribeiro, R. M.; Toh, Minglin
- Nano Letters, Vol. 13, Issue 11
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS 2
journal, August 2016
- Lloyd, David; Liu, Xinghui; Christopher, Jason W.
- Nano Letters, Vol. 16, Issue 9
Very large strain gauges based on single layer MoSe 2 and WSe 2 for sensing applications
journal, December 2015
- Hosseini, Manouchehr; Elahi, Mohammad; Pourfath, Mahdi
- Applied Physics Letters, Vol. 107, Issue 25
Elastic Deformations in 2D van der waals Heterostructures and their Impact on Optoelectronic Properties: Predictions from a Multiscale Computational Approach
journal, June 2015
- Kumar, Hemant; Er, Dequan; Dong, Liang
- Scientific Reports, Vol. 5, Issue 1
Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures
journal, February 2017
- Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.
- 2D Materials, Vol. 4, Issue 2
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS 2
journal, May 2013
- He, Keliang; Poole, Charles; Mak, Kin Fai
- Nano Letters, Vol. 13, Issue 6
Impact of strain on the optical fingerprint of monolayer transition-metal dichalcogenides
journal, July 2017
- Feierabend, Maja; Morlet, Alexandre; Berghäuser, Gunnar
- Physical Review B, Vol. 96, Issue 4
Strain-controlled spin splitting in the conduction band of monolayer
journal, September 2016
- Absor, Moh. Adhib Ulil; Kotaka, Hiroki; Ishii, Fumiyuki
- Physical Review B, Vol. 94, Issue 11
Band structure engineering of monolayer MoS 2 on h-BN: first-principles calculations
journal, January 2014
- Huang, Zongyu; He, Chaoyu; Qi, Xiang
- Journal of Physics D: Applied Physics, Vol. 47, Issue 7
Direct observation of giant binding energy modulation of exciton complexes in monolayer
journal, August 2017
- Gupta, Garima; Kallatt, Sangeeth; Majumdar, Kausik
- Physical Review B, Vol. 96, Issue 8
Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer
journal, February 2016
- Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew
- Scientific Reports, Vol. 6, Issue 1
Phonon-limited mobility in -type single-layer MoS from first principles
journal, March 2012
- Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W.
- Physical Review B, Vol. 85, Issue 11
Electrical Tuning of Exciton Binding Energies in Monolayer
journal, September 2015
- Chernikov, Alexey; van der Zande, Arend M.; Hill, Heather M.
- Physical Review Letters, Vol. 115, Issue 12
Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX 2 ( $M = {\rm Mo}$ , W; $X = {\rm S}$ , Se)
journal, October 2015
- Hosseini, Manouchehr; Elahi, Mohammad; Pourfath, Mahdi
- IEEE Transactions on Electron Devices, Vol. 62, Issue 10
Intervalley scattering potentials of Ge from direct exciton absorption under pressure
journal, March 1994
- Li, G. H.; Goñi, A. R.; Syassen, K.
- Physical Review B, Vol. 49, Issue 12
Stokes shift in quantum wells: Trapping versus thermalization
journal, December 1996
- Polimeni, A.; Patanè, A.; Alessi, M. Grassi
- Physical Review B, Vol. 54, Issue 23
Structural and electronic properties of MoS 2 , WS 2 , and WS 2 /MoS 2 heterostructures encapsulated with hexagonal boron nitride monolayers
journal, August 2017
- Yelgel, C.; Yelgel, Ö. C.; Gülseren, O.
- Journal of Applied Physics, Vol. 122, Issue 6
Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te)
journal, December 2015
- Rhim, S. H.; Kim, Yong Soo; Freeman, A. J.
- Applied Physics Letters, Vol. 107, Issue 24
Strain-Mediated Interlayer Coupling Effects on the Excitonic Behaviors in an Epitaxially Grown MoS 2 /WS 2 van der Waals Heterobilayer
journal, August 2017
- Pak, Sangyeon; Lee, Juwon; Lee, Young-Woo
- Nano Letters, Vol. 17, Issue 9
Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells
journal, December 1999
- Aït-Ouali, A.; Brebner, J. L.; Yip, R. Y. -F.
- Journal of Applied Physics, Vol. 86, Issue 12
Orbital analysis of electronic structure and phonon dispersion in MoS , MoSe , WS , and WSe monolayers under strain
journal, November 2013
- Chang, Chung-Huai; Fan, Xiaofeng; Lin, Shi-Hsin
- Physical Review B, Vol. 88, Issue 19
Probing the Optical Properties and Strain-Tuning of Ultrathin Mo 1– x W x Te 2
journal, March 2018
- Aslan, Ozgur Burak; Datye, Isha M.; Mleczko, Michal J.
- Nano Letters, Vol. 18, Issue 4
Reversible uniaxial strain tuning in atomically thin WSe 2
journal, June 2016
- Schmidt, Robert; Niehues, Iris; Schneider, Robert
- 2D Materials, Vol. 3, Issue 2
Evolution of Electronic Structure in Atomically Thin Sheets of WS 2 and WSe 2
journal, December 2012
- Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang
- ACS Nano, Vol. 7, Issue 1
Strain-engineered growth of two-dimensional materials
journal, September 2017
- Ahn, Geun Ho; Amani, Matin; Rasool, Haider
- Nature Communications, Vol. 8, Issue 1
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer
journal, August 2014
- Chernikov, Alexey; Berkelbach, Timothy C.; Hill, Heather M.
- Physical Review Letters, Vol. 113, Issue 7
Quasiparticle band structures and optical properties of strained monolayer MoS and WS
journal, April 2013
- Shi, Hongliang; Pan, Hui; Zhang, Yong-Wei
- Physical Review B, Vol. 87, Issue 15
Theory of neutral and charged excitons in monolayer transition metal dichalcogenides
journal, July 2013
- Berkelbach, Timothy C.; Hybertsen, Mark S.; Reichman, David R.
- Physical Review B, Vol. 88, Issue 4
Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe 2
journal, September 2015
- Zhang, Chendong; Chen, Yuxuan; Johnson, Amber
- Nano Letters, Vol. 15, Issue 10
Evidence of indirect gap in monolayer WSe2
journal, October 2017
- Hsu, Wei-Ting; Lu, Li-Syuan; Wang, Dean
- Nature Communications, Vol. 8, Issue 1
Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
journal, August 1996
- Fischetti, M. V.; Laux, S. E.
- Journal of Applied Physics, Vol. 80, Issue 4, p. 2234-2252
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
conference, February 2017
- Selig, Malte; Berghäuser, Gunnar; Raja, Archana
- SPIE OPTO, SPIE Proceedings
Coulomb engineering of the bandgap and excitons in two-dimensional materials
text, January 2017
- Raja, Archana; Chaves, Andrey; Yu, Jaeeun
- Universität Regensburg
Twist-tailoring Coulomb correlations in van der Waals homobilayers
text, January 2020
- Merkl, Philipp; Mooshammer, Fabian; Brem, Samuel
- Universität Regensburg
Origin of the Stokes Shift: A Geometrical Model of Exciton Spectra in 2D Semiconductors
journal, March 1994
- Yang, Fang; Wilkinson, M.; Austin, E. J.
- Physical Review Letters, Vol. 72, Issue 12
Coulomb engineering of the bandgap and excitons in two-dimensional materials
text, January 2017
- Chernikov, Alexey; Raja, Archana; Chaves, Andrey
- Universität Regensburg
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
text, January 2012
- Zhao, Weijie; Ghorannevis, Zohreh; Chua, Leiqiang
- arXiv
Theory of Neutral and Charged Excitons in Monolayer Transition Metal Dichalcogenides
text, January 2013
- Berkelbach, Timothy C.; Hybertsen, Mark S.; Reichman, David R.
- arXiv
Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2
text, January 2013
- Zhao, Weijie; Ribeiro, R. M.; Toh, Minglin
- arXiv
k.p theory for two-dimensional transition metal dichalcogenide semiconductors
text, January 2014
- Kormányos, Andor; Burkard, Guido; Gmitra, Martin
- arXiv
Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer $SL-WSe_2$
text, January 2014
- Zhang, Chendong; Chen, Yuxuan; Johnson, Amber
- arXiv
Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields
text, January 2016
- Stier, Andreas V.; Wilson, Nathan P.; Clark, Genevieve
- arXiv
Stokes shift in quantum wells: trapping versus thermalization
text, January 1996
- Polimeni, A.; Patanè, A.; Alessi, M. Grassi
- arXiv
Works referencing / citing this record:
Dielectric disorder in two-dimensional materials
journal, August 2019
- Raja, Archana; Waldecker, Lutz; Zipfel, Jonas
- Nature Nanotechnology, Vol. 14, Issue 9
Intrinsic lifetime of higher excitonic states in tungsten diselenide monolayers
journal, January 2019
- Brem, Samuel; Zipfel, Jonas; Selig, Malte
- Nanoscale, Vol. 11, Issue 25
Exciton control in a room temperature bulk semiconductor with coherent strain pulses
journal, November 2019
- Baldini, Edoardo; Dominguez, Adriel; Palmieri, Tania
- Science Advances, Vol. 5, Issue 11
Strain-tunable orbital, spin-orbit, and optical properties of monolayer transition-metal dichalcogenides
text, January 2019
- Zollner, Klaus; Faria Junior, Paulo E.; Fabian, Jaroslav
- Universität Regensburg
Intrinsic Lifetime of Higher Excitonic States in Tungsten Diselenide Monolayers
text, January 2019
- Brem, Samuel; Zipfel, Jonas; Selig, Malte
- arXiv
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