Strain tuning of excitons in monolayer WSe2

Aslan, Ozgur Burak; Deng, Minda; Heinz, Tony F.

doi:10.1103/physrevb.98.115308

Title: Strain tuning of excitons in monolayer ${WSe}_{2}$

Journal Article · 27 September 2018 · Physical Review B

DOI: https://doi.org/10.1103/physrevb.98.115308 · OSTI ID:1562880

Aslan, Ozgur Burak ^[1]; Deng, Minda ^[1]; Heinz, Tony F. ^[1]

Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

We investigate excitonic absorption and emission in monolayer (1L) WSe₂ under tensile strain. We observe a redshift of 100 meV in the A exciton energy and a decrease of 25 meV in its estimated binding energy under 2.1% strain. Surprisingly, the linewidth of the A exciton decreases by almost a factor of two under strain, from 42 to 24 meV at room temperature. We explain this effect as the result of suppression of phonon-mediated exciton scattering channels. Here, we show that such a suppression results from the relative shift under strain of a secondary valley in the conduction band that is nearly degenerate with the K valley where the A exciton is formed.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: DMR-1420634; AC02-76SF00515

OSTI ID:: 1562880

Alternate ID(s):: OSTI ID: 1474105; OSTI ID: 1474195

Journal Information:: Physical Review B, Vol. 98, Issue 11; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 114 works

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Figures / Tables (3)

FIG. 1(p. 2)

FIG. 2(p. 3)

FIG. 3(p. 4)

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77 NANOSCIENCE AND NANOTECHNOLOGY
excitons
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Title: Strain tuning of excitons in monolayer WSe 2

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