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Title: Carrier-Transport Study of Gallium Arsenide Hillock Defects

Abstract

Abstract Single-crystalline gallium arsenide (GaAs) grown by various techniques can exhibit hillock defects on the surface when sub-optimal growth conditions are employed. The defects act as nonradiative recombination centers and limit solar cell performance. In this paper, we applied near-field transport imaging to study hillock defects in a GaAs thin film. On the same defects, we also performed near-field cathodoluminescence, standard cathodoluminescence, electron-backscattered diffraction, transmission electron microscopy, and energy-dispersive X-ray spectrometry. We found that the luminescence intensity around the hillock area is two orders of magnitude lower than on the area without hillock defects in the millimeter region, and the excess carrier diffusion length is degraded by at least a factor of five with significant local variation. In conclusion, the optical and transport properties are affected over a significantly larger region than the observed topography and crystallographic and chemical compositions associated with the defect.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [1];  [2];  [1];  [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1562871
Report Number(s):
NREL/JA-5K00-71951
Journal ID: ISSN 1431-9276; applab
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Microscopy and Microanalysis
Additional Journal Information:
Journal Volume: 25; Journal Issue: 05; Journal ID: ISSN 1431-9276
Publisher:
Microscopy Society of America (MSA)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; solar cell; gallium arsenide; carrier transport; near field; defect

Citation Formats

Xiao, Chuanxiao, Jiang, Chun-Sheng, Liu, Jun, Norman, Andrew, Moseley, John, Schulte, Kevin L., Ptak, Aaron J., Gorman, Brian, Al-Jassim, Mowafak, Haegel, Nancy M., and Moutinho, Helio R. Carrier-Transport Study of Gallium Arsenide Hillock Defects. United States: N. p., 2019. Web. doi:10.1017/S1431927619014909.
Xiao, Chuanxiao, Jiang, Chun-Sheng, Liu, Jun, Norman, Andrew, Moseley, John, Schulte, Kevin L., Ptak, Aaron J., Gorman, Brian, Al-Jassim, Mowafak, Haegel, Nancy M., & Moutinho, Helio R. Carrier-Transport Study of Gallium Arsenide Hillock Defects. United States. doi:10.1017/S1431927619014909.
Xiao, Chuanxiao, Jiang, Chun-Sheng, Liu, Jun, Norman, Andrew, Moseley, John, Schulte, Kevin L., Ptak, Aaron J., Gorman, Brian, Al-Jassim, Mowafak, Haegel, Nancy M., and Moutinho, Helio R. Mon . "Carrier-Transport Study of Gallium Arsenide Hillock Defects". United States. doi:10.1017/S1431927619014909.
@article{osti_1562871,
title = {Carrier-Transport Study of Gallium Arsenide Hillock Defects},
author = {Xiao, Chuanxiao and Jiang, Chun-Sheng and Liu, Jun and Norman, Andrew and Moseley, John and Schulte, Kevin L. and Ptak, Aaron J. and Gorman, Brian and Al-Jassim, Mowafak and Haegel, Nancy M. and Moutinho, Helio R.},
abstractNote = {Abstract Single-crystalline gallium arsenide (GaAs) grown by various techniques can exhibit hillock defects on the surface when sub-optimal growth conditions are employed. The defects act as nonradiative recombination centers and limit solar cell performance. In this paper, we applied near-field transport imaging to study hillock defects in a GaAs thin film. On the same defects, we also performed near-field cathodoluminescence, standard cathodoluminescence, electron-backscattered diffraction, transmission electron microscopy, and energy-dispersive X-ray spectrometry. We found that the luminescence intensity around the hillock area is two orders of magnitude lower than on the area without hillock defects in the millimeter region, and the excess carrier diffusion length is degraded by at least a factor of five with significant local variation. In conclusion, the optical and transport properties are affected over a significantly larger region than the observed topography and crystallographic and chemical compositions associated with the defect.},
doi = {10.1017/S1431927619014909},
journal = {Microscopy and Microanalysis},
number = 05,
volume = 25,
place = {United States},
year = {2019},
month = {9}
}

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This content will become publicly available on September 2, 2020
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