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Title: Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy

Authors:
 [1];  [2];  [1];  [3];  [3];  [4]; ORCiD logo [5]; ORCiD logo [6]; ORCiD logo [7]; ORCiD logo [8];  [9]; ORCiD logo [10]; ORCiD logo [11]
  1. Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
  2. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
  3. Forschungszentrum Jülich Peter Grünberg Institute (PGI-6), Leo-Brandt-Strasse, 52425 Jülich, Germany
  4. 4th Physics Institute and Research Center SCoPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
  5. Department of Physics, ETH Zurich, Otto-Stern-Weg 1, 8093 Zurich, Switzerland, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  6. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  7. Forschungszentrum Jülich Peter Grünberg Institute (PGI-6), Leo-Brandt-Strasse, 52425 Jülich, Germany, Physics Department, UC Davis, Davis, California 95616, USA
  8. Forschungszentrum Jülich Peter Grünberg Institute (PGI-6), Leo-Brandt-Strasse, 52425 Jülich, Germany, Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, California, 94720, USA
  9. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain, ICREA–Instució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain
  10. Institut Néel, CNRS &, University Grenoble Alpes, 38042 Grenoble, France
  11. Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland, Department of Materials Science and Engineering, Norwegian University of Science and Technology, NTNU, 7043 Trondheim, Norway
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1562740
Grant/Contract Number:  
AC02-05-CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 12; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Schaab, J., Shapovalov, K., Schoenherr, P., Hackl, J., Khan, M. I., Hentschel, M., Yan, Z., Bourret, E., Schneider, C. M., Nemsák, S., Stengel, M., Cano, A., and Meier, D. Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy. United States: N. p., 2019. Web. doi:10.1063/1.5117881.
Schaab, J., Shapovalov, K., Schoenherr, P., Hackl, J., Khan, M. I., Hentschel, M., Yan, Z., Bourret, E., Schneider, C. M., Nemsák, S., Stengel, M., Cano, A., & Meier, D. Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy. United States. doi:10.1063/1.5117881.
Schaab, J., Shapovalov, K., Schoenherr, P., Hackl, J., Khan, M. I., Hentschel, M., Yan, Z., Bourret, E., Schneider, C. M., Nemsák, S., Stengel, M., Cano, A., and Meier, D. Mon . "Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy". United States. doi:10.1063/1.5117881.
@article{osti_1562740,
title = {Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy},
author = {Schaab, J. and Shapovalov, K. and Schoenherr, P. and Hackl, J. and Khan, M. I. and Hentschel, M. and Yan, Z. and Bourret, E. and Schneider, C. M. and Nemsák, S. and Stengel, M. and Cano, A. and Meier, D.},
abstractNote = {},
doi = {10.1063/1.5117881},
journal = {Applied Physics Letters},
number = 12,
volume = 115,
place = {United States},
year = {2019},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on September 19, 2020
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