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Title: Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width

Abstract

Mode-locked InAs/InGaAs quantum dot lasers emitting optical frequency combs centered at 1310 nm are promising sources for high-speed and high-capacity communication applications. We report on the stable optical pulse train generation by a monolithic passively mode-locked edge-emitting two-section quantum dot laser based on a five-stack InAs/InGaAs dots-in-a-well structure directly grown on an on-axis (001) silicon substrate by solid-source molecular beam epitaxy. Optical pulses as short as 1.7 ps at a pulse repetition rate or inter-mode beat frequency of 9.4 GHz are obtained. A minimum pulse-to-pulse timing jitter of 9 fs, corresponding to a repetition rate line width of 400 Hz, is demonstrated. The generated optical frequency combs yield exceptional low amplitude jitter performance and comb widths exceed 5.5 nm at a -3 dB criteria, containing more than 100 comb carriers.

Authors:
ORCiD logo; ORCiD logo; ORCiD logo; ORCiD logo; ORCiD logo
Publication Date:
Research Org.:
Columbia Univ., New York, NY (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1562146
Alternate Identifier(s):
OSTI ID: 1613734
Grant/Contract Number:  
AR000067; AR0000843
Resource Type:
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Name: Optics Express Journal Volume: 27 Journal Issue: 19; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Optics

Citation Formats

Auth, Dominik, Liu, Songtao, Norman, Justin, Edward Bowers, John, and Breuer, Stefan. Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width. United States: N. p., 2019. Web. doi:10.1364/OE.27.027256.
Auth, Dominik, Liu, Songtao, Norman, Justin, Edward Bowers, John, & Breuer, Stefan. Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width. United States. doi:10.1364/OE.27.027256.
Auth, Dominik, Liu, Songtao, Norman, Justin, Edward Bowers, John, and Breuer, Stefan. Fri . "Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width". United States. doi:10.1364/OE.27.027256.
@article{osti_1562146,
title = {Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width},
author = {Auth, Dominik and Liu, Songtao and Norman, Justin and Edward Bowers, John and Breuer, Stefan},
abstractNote = {Mode-locked InAs/InGaAs quantum dot lasers emitting optical frequency combs centered at 1310 nm are promising sources for high-speed and high-capacity communication applications. We report on the stable optical pulse train generation by a monolithic passively mode-locked edge-emitting two-section quantum dot laser based on a five-stack InAs/InGaAs dots-in-a-well structure directly grown on an on-axis (001) silicon substrate by solid-source molecular beam epitaxy. Optical pulses as short as 1.7 ps at a pulse repetition rate or inter-mode beat frequency of 9.4 GHz are obtained. A minimum pulse-to-pulse timing jitter of 9 fs, corresponding to a repetition rate line width of 400 Hz, is demonstrated. The generated optical frequency combs yield exceptional low amplitude jitter performance and comb widths exceed 5.5 nm at a -3 dB criteria, containing more than 100 comb carriers.},
doi = {10.1364/OE.27.027256},
journal = {Optics Express},
number = 19,
volume = 27,
place = {United States},
year = {2019},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1364/OE.27.027256

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