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Title: Competing phases in epitaxial vanadium dioxide at nanoscale

Abstract

Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, the correlated vanadium dioxide (VO 2) exhibits a strong competition between insulating and metallic phases, which is important for practical applications. However, the phase boundary undergoes a strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of nanoscale M2 phase domains in VO 2 epitaxial films under anisotropic strain relaxation. The competing phases of the films are imaged by multilength-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates the critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO 2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO 2 films.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
OSTI Identifier:
1561644
Alternate Identifier(s):
OSTI ID: 1559361
Grant/Contract Number:  
AC05-00OR22725; AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 7; Journal Issue: 8; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sharma, Yogesh, Holt, Martin V., Laanait, Nouamane, Gao, Xiang, Ivanov, Ilia N., Collins, Liam, Sohn, Changhee, Liao, Zhaoliang, Skoropata, Elizabeth, Kalinin, Sergei V., Balke, Nina, Eres, Gyula, Ward, Thomas Z., and Lee, Ho Nyung. Competing phases in epitaxial vanadium dioxide at nanoscale. United States: N. p., 2019. Web. doi:10.1063/1.5115784.
Sharma, Yogesh, Holt, Martin V., Laanait, Nouamane, Gao, Xiang, Ivanov, Ilia N., Collins, Liam, Sohn, Changhee, Liao, Zhaoliang, Skoropata, Elizabeth, Kalinin, Sergei V., Balke, Nina, Eres, Gyula, Ward, Thomas Z., & Lee, Ho Nyung. Competing phases in epitaxial vanadium dioxide at nanoscale. United States. doi:10.1063/1.5115784.
Sharma, Yogesh, Holt, Martin V., Laanait, Nouamane, Gao, Xiang, Ivanov, Ilia N., Collins, Liam, Sohn, Changhee, Liao, Zhaoliang, Skoropata, Elizabeth, Kalinin, Sergei V., Balke, Nina, Eres, Gyula, Ward, Thomas Z., and Lee, Ho Nyung. Thu . "Competing phases in epitaxial vanadium dioxide at nanoscale". United States. doi:10.1063/1.5115784. https://www.osti.gov/servlets/purl/1561644.
@article{osti_1561644,
title = {Competing phases in epitaxial vanadium dioxide at nanoscale},
author = {Sharma, Yogesh and Holt, Martin V. and Laanait, Nouamane and Gao, Xiang and Ivanov, Ilia N. and Collins, Liam and Sohn, Changhee and Liao, Zhaoliang and Skoropata, Elizabeth and Kalinin, Sergei V. and Balke, Nina and Eres, Gyula and Ward, Thomas Z. and Lee, Ho Nyung},
abstractNote = {Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, the correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases, which is important for practical applications. However, the phase boundary undergoes a strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The competing phases of the films are imaged by multilength-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates the critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films.},
doi = {10.1063/1.5115784},
journal = {APL Materials},
number = 8,
volume = 7,
place = {United States},
year = {2019},
month = {8}
}

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