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Title: Evolution of structural, magnetic, and transport properties in MnBi2-xSbxTe4

Journal Article · · Physical Review B

In this work we report the evolution of structural, magnetic, and transport properties in MnBi2-xSbxTe4(0 ≤ x ≤ 2) single crystals. MnSb2Te4, isostructural to MnBi2Te4, is successfully synthesized in single-crystal form. Magnetic measurements suggest an antiferromagnetic order below TN=19K for MnSb2Te4 with the magnetic moments aligned along the crystallographic c axis. With increasing Sb content in MnBi2-xSbxTe4, the a-lattice parameter decreases linearly following Vegard's law, while the c-lattice parameter shows little compositional dependence. The contraction along a is caused by the reduction of the Mn-Te-Mn bond angle, while the Mn-Te bond length remains nearly constant. The antiferromagnetic ordering temperature slightly decreases from 24 K for MnBi2Te4 to 19 K for MnSb2Te4. More dramatic change was observed for the critical magnetic fields required for the spin-flop transition and the moment saturation. Both critical fields decrease with increasing Sb content for x ≤ 1.72; a spin-flip transition occurs in MnSb2Te4 at a small field of 3 kOe applied along the c axis. In high magnetic fields, the saturation moment at 2 K shows significant suppression from 3.56 μB/Mn for MnBi2Te4 to 1.57 μB/Mn for MnSb2Te4. Analysis of the magnetization data suggests that both the interlayer magnetic interaction and single-ion anisotropy decrease with increasing Sb content for x ≤ 1.72. The partial substitution of Bi by Sb also dramatically affects the transport properties. A crossover from n-type to p-type conducting behavior is observed around x ≈0.63. Our findings show close correlation between structural, magnetic, and transport properties in MnBi2-xSbxTe4 and that partial substitution of Bi by Sb is an effective approach to fine tuning both the magnetism and transport properties of MnBi2-xSbxTe4.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC05-00OR22725; AC0500OR22725; AC02-07CH11358
OSTI ID:
1561643
Alternate ID(s):
OSTI ID: 1560307; OSTI ID: 1562680
Report Number(s):
IS-J-10040; TRN: US2000633
Journal Information:
Physical Review B, Vol. 100, Issue 10; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 120 works
Citation information provided by
Web of Science

References (23)

Generalized Gradient Approximation Made Simple journal October 1996
Topological Axion States in the Magnetic Insulator MnBi 2 Te 4 with the Quantized Magnetoelectric Effect journal May 2019
Indirect Exchange Coupling of Nuclear Magnetic Moments by Conduction Electrons journal October 1954
A Theory of Metallic Ferro- and Antiferromagnetism on Zener's Model journal July 1956
Chemical Aspects of the Candidate Antiferromagnetic Topological Insulator MnBi 2 Te 4 journal March 2019
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator journal March 2013
Magnetic Properties of Cu-Mn Alloys journal June 1957
Experimental Realization of an Intrinsic Magnetic Topological Insulator * journal June 2019
Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4 journal January 2013
Chemical disorder and spin-liquid-like magnetism in the van der Waals layered 5 d transition metal halide Os 0.55 Cl 2 journal June 2019
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Intrinsic magnetic topological insulators in van der Waals layered MnBi 2 Te 4 -family materials journal June 2019
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects journal April 2017
Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi 2 Te 4 Films journal March 2019
Crystal growth and magnetic structure of MnBi 2 Te 4 journal June 2019
Competing rhombohedral and monoclinic crystal structures in MnPn 2 Ch 4 compounds: An ab-initio study journal June 2017
Transport properties of thin flakes of the antiferromagnetic topological insulator MnB i 2 T e 4 journal April 2019
Novel ternary layered manganese bismuth tellurides of the MnTe-Bi2Te3 system: Synthesis and crystal structure journal June 2019
Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets journal May 2021
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator text January 2016
Intrinsic magnetic topological insulators in van der Waals layered MnBi$_2$Te$_4$-family materials text January 2018
Experimental realization of an intrinsic magnetic topological insulator text January 2018

Cited By (6)

The Material Efforts for Quantized Hall Devices Based on Topological Insulators journal December 2019
Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes journal October 2019
A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling journal January 2020
In-plane magnetic-field-induced quantum anomalous Hall plateau transition journal October 2019
Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi journal November 2019
Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes text January 2019