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Title: Electric-field noise from thermally activated fluctuators in a surface ion trap

Abstract

We probe electric-field noise near the metal surface of an ion-trap chip in the temperature range from 295 to 530 K. We observe a nontrivial temperature dependence with the noise amplitude at 1 MHz frequency saturating around 500 K. Measurements of the noise spectrum reveal a 1/ f α≈1 dependence and a small decrease in α between low and high temperatures. This behavior can be explained by considering noise from a distribution of thermally activated two-level fluctuators with activation energies between 0.35 and 0.65 eV. Processes in this energy range may be relevant to understanding electric-field noise in ion traps; for example, defect motion in the solid state and surface adsorbate binding energies. Lastly, the study of these processes may aid in identification of the origin of excess electric-field noise in ion traps—a major source of ion motional decoherence limiting the performance of surface traps as quantum devices.

Authors:
 [1];  [1]; ORCiD logo [1];  [1];  [1];  [2];  [1]
  1. Univ. of California, Berkeley, CA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1561446
Alternate Identifier(s):
OSTI ID: 1546283
Report Number(s):
LLNL-JRNL-759281
Journal ID: ISSN 2469-9926; PLRAAN; 947593
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review A
Additional Journal Information:
Journal Volume: 99; Journal Issue: 6; Journal ID: ISSN 2469-9926
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats

Noel, Crystal, Berlin-Udi, Maya, Matthiesen, Clemens, Yu, Jessica, Zhou, Yi, Lordi, Vincenzo, and Häffner, Hartmut. Electric-field noise from thermally activated fluctuators in a surface ion trap. United States: N. p., 2019. Web. doi:10.1103/PhysRevA.99.063427.
Noel, Crystal, Berlin-Udi, Maya, Matthiesen, Clemens, Yu, Jessica, Zhou, Yi, Lordi, Vincenzo, & Häffner, Hartmut. Electric-field noise from thermally activated fluctuators in a surface ion trap. United States. doi:10.1103/PhysRevA.99.063427.
Noel, Crystal, Berlin-Udi, Maya, Matthiesen, Clemens, Yu, Jessica, Zhou, Yi, Lordi, Vincenzo, and Häffner, Hartmut. Wed . "Electric-field noise from thermally activated fluctuators in a surface ion trap". United States. doi:10.1103/PhysRevA.99.063427.
@article{osti_1561446,
title = {Electric-field noise from thermally activated fluctuators in a surface ion trap},
author = {Noel, Crystal and Berlin-Udi, Maya and Matthiesen, Clemens and Yu, Jessica and Zhou, Yi and Lordi, Vincenzo and Häffner, Hartmut},
abstractNote = {We probe electric-field noise near the metal surface of an ion-trap chip in the temperature range from 295 to 530 K. We observe a nontrivial temperature dependence with the noise amplitude at 1 MHz frequency saturating around 500 K. Measurements of the noise spectrum reveal a 1/fα≈1 dependence and a small decrease in α between low and high temperatures. This behavior can be explained by considering noise from a distribution of thermally activated two-level fluctuators with activation energies between 0.35 and 0.65 eV. Processes in this energy range may be relevant to understanding electric-field noise in ion traps; for example, defect motion in the solid state and surface adsorbate binding energies. Lastly, the study of these processes may aid in identification of the origin of excess electric-field noise in ion traps—a major source of ion motional decoherence limiting the performance of surface traps as quantum devices.},
doi = {10.1103/PhysRevA.99.063427},
journal = {Physical Review A},
number = 6,
volume = 99,
place = {United States},
year = {2019},
month = {6}
}

Journal Article:
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