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Title: Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists

Abstract

Organic–inorganic hybrid resists are emerging as an effective way of addressing stringent process requirements for aggressive down-scaling of semiconducting devices. Yet, hybrid resists generally require complex chemical synthesis while being predominantly negative-tone with high dose requirements. For positive-tone processes and high-aspect-ratio pattern transfers, resist choices are limited to costly, non-hybrid alternatives, whose etch resistance is still inferior compared with hybrid resists. In this work, we demonstrate a novel hybrid positive-tone resist platform utilizing simple ex situ vapor-phase inorganic infiltration into standard resist materials. A model system based on poly(methyl methacrylate) (PMMA) thin film hybridized with aluminum oxide has been demonstrated for electron-beam lithography patterning, featuring a fully controllable critical exposure dose, contrast, and etch resistance. The hybrid resist not only achieves contrast as high as ~30, six-fold enhancement over standard PMMA, but also enables Si nanostructures with resolution down to ~30 nm and an aspect ratio as high as ~17, owing to enhancement of the Si etch selectivity to ~70, with an estimated achievable maximum of ~300, far exceeding known commercial positive-tone resist systems. The easy implementabilility, combined with versatile ex situ control of resist characteristics, makes this hybrid resist synthesis method uniquely suited for addressing the resist performance andmore » high throughput required for advanced nanolithography techniques, such as extreme ultraviolet lithography, possibly.« less

Authors:
ORCiD logo [1]; ORCiD logo [2];  [1];  [1];  [3];  [1]; ORCiD logo [1]
+ Show Author Affiliations
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Stony Brook Univ., NY (United States)
  3. Univ. of Texas-Dallas, Richardson, TX (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1561253
Alternate Identifier(s):
OSTI ID: 1542528
Report Number(s):
BNL-212064-2019-JAAM
Journal ID: ISSN 2050-7526; JMCCCX
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Chemistry C
Additional Journal Information:
Journal Volume: 7; Journal Issue: 29; Journal ID: ISSN 2050-7526
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
29 ENERGY PLANNING, POLICY AND ECONOMY

Citation Formats

Tiwale, Nikhil, Subramanian, Ashwanth, Kisslinger, Kim, Lu, Ming, Kim, Jiyoung, Stein, Aaron, and Nam, Chang-Yong. Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists. United States: N. p., 2019. Web. doi:10.1039/C9TC02974E.
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Tiwale, Nikhil, Subramanian, Ashwanth, Kisslinger, Kim, Lu, Ming, Kim, Jiyoung, Stein, Aaron, & Nam, Chang-Yong. Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists. United States. doi:10.1039/C9TC02974E.
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Tiwale, Nikhil, Subramanian, Ashwanth, Kisslinger, Kim, Lu, Ming, Kim, Jiyoung, Stein, Aaron, and Nam, Chang-Yong. Mon . "Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists". United States. doi:10.1039/C9TC02974E.
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@article{osti_1561253,
title = {Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists},
author = {Tiwale, Nikhil and Subramanian, Ashwanth and Kisslinger, Kim and Lu, Ming and Kim, Jiyoung and Stein, Aaron and Nam, Chang-Yong},
abstractNote = {Organic–inorganic hybrid resists are emerging as an effective way of addressing stringent process requirements for aggressive down-scaling of semiconducting devices. Yet, hybrid resists generally require complex chemical synthesis while being predominantly negative-tone with high dose requirements. For positive-tone processes and high-aspect-ratio pattern transfers, resist choices are limited to costly, non-hybrid alternatives, whose etch resistance is still inferior compared with hybrid resists. In this work, we demonstrate a novel hybrid positive-tone resist platform utilizing simple ex situ vapor-phase inorganic infiltration into standard resist materials. A model system based on poly(methyl methacrylate) (PMMA) thin film hybridized with aluminum oxide has been demonstrated for electron-beam lithography patterning, featuring a fully controllable critical exposure dose, contrast, and etch resistance. The hybrid resist not only achieves contrast as high as ~30, six-fold enhancement over standard PMMA, but also enables Si nanostructures with resolution down to ~30 nm and an aspect ratio as high as ~17, owing to enhancement of the Si etch selectivity to ~70, with an estimated achievable maximum of ~300, far exceeding known commercial positive-tone resist systems. The easy implementabilility, combined with versatile ex situ control of resist characteristics, makes this hybrid resist synthesis method uniquely suited for addressing the resist performance and high throughput required for advanced nanolithography techniques, such as extreme ultraviolet lithography, possibly.},
doi = {10.1039/C9TC02974E},
journal = {Journal of Materials Chemistry C},
number = 29,
volume = 7,
place = {United States},
year = {2019},
month = {7}
}
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This content will become publicly available on July 8, 2020
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DOI:  10.1039/C9TC02974E
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Works referenced in this record:

Approaches to deep ultraviolet photolithography utilizing acid hardened resin photoresist systems
journal, November 1989

  • Thackeray, James W.; Orsula, George W.; Bohland, John F.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, Issue 6, Article No. 1620
  • DOI: 10.1116/1.584502

High sensitive negative silylation process for 193nm lithography
journal, June 2000

PRIME process for deep UV and E-beam lithography
journal, April 1990

Optimized surface silylation of chemically amplified epoxidized photoresists for micromachining applications
journal, April 2010

  • Kontziampasis, D.; Beltsios, K.; Tegou, E.
  • Journal of Applied Polymer Science, Vol. 117, Issue 4, p. 2189-2195
  • DOI: 10.1002/app.31644

Enhanced Lithographic Imaging Layer Meets Semiconductor Manufacturing Specification a Decade Early
journal, April 2012

  • Tseng, Yu-Chih; Mane, Anil U.; Elam, Jeffrey W.
  • Advanced Materials, Vol. 24, Issue 19, p. 2608-2613
  • DOI: 10.1002/adma.201104871
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