Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists
Abstract
Organic–inorganic hybrid resists are emerging as an effective way of addressing stringent process requirements for aggressive down-scaling of semiconducting devices. Yet, hybrid resists generally require complex chemical synthesis while being predominantly negative-tone with high dose requirements. For positive-tone processes and high-aspect-ratio pattern transfers, resist choices are limited to costly, non-hybrid alternatives, whose etch resistance is still inferior compared with hybrid resists. In this work, we demonstrate a novel hybrid positive-tone resist platform utilizing simple ex situ vapor-phase inorganic infiltration into standard resist materials. A model system based on poly(methyl methacrylate) (PMMA) thin film hybridized with aluminum oxide has been demonstrated for electron-beam lithography patterning, featuring a fully controllable critical exposure dose, contrast, and etch resistance. The hybrid resist not only achieves contrast as high as ~30, six-fold enhancement over standard PMMA, but also enables Si nanostructures with resolution down to ~30 nm and an aspect ratio as high as ~17, owing to enhancement of the Si etch selectivity to ~70, with an estimated achievable maximum of ~300, far exceeding known commercial positive-tone resist systems. The easy implementabilility, combined with versatile ex situ control of resist characteristics, makes this hybrid resist synthesis method uniquely suited for addressing the resist performance andmore »
- Authors:
-
[1];
[2];
[1]
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Stony Brook Univ., NY (United States)
- Univ. of Texas-Dallas, Richardson, TX (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1561253
- Alternate Identifier(s):
- OSTI ID: 1542528
- Report Number(s):
- BNL-212064-2019-JAAM; BNL-213624-2020-JAAM
Journal ID: ISSN 2050-7526; JMCCCX
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Materials Chemistry C
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 29; Journal ID: ISSN 2050-7526
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 29 ENERGY PLANNING, POLICY AND ECONOMY; 36 MATERIALS SCIENCE
Citation Formats
Tiwale, Nikhil, Subramanian, Ashwanth, Kisslinger, Kim, Lu, Ming, Kim, Jiyoung, Stein, Aaron, and Nam, Chang-Yong. Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists. United States: N. p., 2019.
Web. doi:10.1039/C9TC02974E.
Tiwale, Nikhil, Subramanian, Ashwanth, Kisslinger, Kim, Lu, Ming, Kim, Jiyoung, Stein, Aaron, & Nam, Chang-Yong. Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists. United States. doi:10.1039/C9TC02974E.
Tiwale, Nikhil, Subramanian, Ashwanth, Kisslinger, Kim, Lu, Ming, Kim, Jiyoung, Stein, Aaron, and Nam, Chang-Yong. Mon .
"Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists". United States. doi:10.1039/C9TC02974E. https://www.osti.gov/servlets/purl/1561253.
@article{osti_1561253,
title = {Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists},
author = {Tiwale, Nikhil and Subramanian, Ashwanth and Kisslinger, Kim and Lu, Ming and Kim, Jiyoung and Stein, Aaron and Nam, Chang-Yong},
abstractNote = {Organic–inorganic hybrid resists are emerging as an effective way of addressing stringent process requirements for aggressive down-scaling of semiconducting devices. Yet, hybrid resists generally require complex chemical synthesis while being predominantly negative-tone with high dose requirements. For positive-tone processes and high-aspect-ratio pattern transfers, resist choices are limited to costly, non-hybrid alternatives, whose etch resistance is still inferior compared with hybrid resists. In this work, we demonstrate a novel hybrid positive-tone resist platform utilizing simple ex situ vapor-phase inorganic infiltration into standard resist materials. A model system based on poly(methyl methacrylate) (PMMA) thin film hybridized with aluminum oxide has been demonstrated for electron-beam lithography patterning, featuring a fully controllable critical exposure dose, contrast, and etch resistance. The hybrid resist not only achieves contrast as high as ~30, six-fold enhancement over standard PMMA, but also enables Si nanostructures with resolution down to ~30 nm and an aspect ratio as high as ~17, owing to enhancement of the Si etch selectivity to ~70, with an estimated achievable maximum of ~300, far exceeding known commercial positive-tone resist systems. The easy implementabilility, combined with versatile ex situ control of resist characteristics, makes this hybrid resist synthesis method uniquely suited for addressing the resist performance and high throughput required for advanced nanolithography techniques, such as extreme ultraviolet lithography, possibly.},
doi = {10.1039/C9TC02974E},
journal = {Journal of Materials Chemistry C},
number = 29,
volume = 7,
place = {United States},
year = {2019},
month = {7}
}
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Works referencing / citing this record:
Silylated acid hardened resist process: A deep ultraviolet surface imaging technique
journal, November 1990
- Pavelchek, Edward K.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, Issue 6
Application of Plasmask R resist and the DESIRE process to lithography at 248 nm
journal, November 1990
- Hutton, Richard S.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, Issue 6
Combination photo and electron beam lithography with polymethyl methacrylate (PMMA) resist
journal, October 2017
- Carbaugh, Daniel J.; Pandya, Sneha G.; Wright, Jason T.
- Nanotechnology, Vol. 28, Issue 45
Spin-coatable HfO2 resist for optical and electron beam lithographies
journal, January 2010
- Saifullah, M. S. M.; Khan, M. Z. R.; Hasko, David G.
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 1
Extreme ultraviolet resist materials for sub-7 nm patterning
journal, January 2017
- Li, Li; Liu, Xuan; Pal, Shyam
- Chemical Society Reviews, Vol. 46, Issue 16
High aspect ratio silicon etch: A review
journal, September 2010
- Wu, Banqiu; Kumar, Ajay; Pamarthy, Sharma
- Journal of Applied Physics, Vol. 108, Issue 5
Antimony photoresists for EUV lithography: mechanistic studies
conference, March 2017
- Murphy, Michael; Narasimhan, Amrit; Grzeskowiak, Steven
- SPIE Advanced Lithography, SPIE Proceedings
Chemical Modification Mechanisms in Hybrid Hafnium Oxo-methacrylate Nanocluster Photoresists for Extreme Ultraviolet Patterning
journal, August 2018
- Mattson, Eric C.; Cabrera, Yasiel; Rupich, Sara M.
- Chemistry of Materials, Vol. 30, Issue 17
Improved etch resistance of ZEP 520A in reactive ion etching through heat and ultraviolet light treatment
journal, January 2009
- Czaplewski, David A.; Tallant, David R.; Patrizi, Gary A.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 2
Chemical Semi-Amplified positive E-beam Resist (CSAR 62) for highest resolution
conference, October 2013
- Schirmer, M.; Büttner, B.; Syrowatka, F.
- 29th European Mask and Lithography Conference, SPIE Proceedings
Platinum and palladium oxalates: positive-tone extreme ultraviolet resists
journal, October 2015
- Sortland, Miriam; Hotalen, Jodi; Re, Ryan Del
- Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 14, Issue 4
Negative resist image by dry etching: a novel surface imaging resist scheme
journal, June 2003
- Arshak, K.; Mihov, M.; Sutton, D.
- Microelectronic Engineering, Vol. 67-68
Metal-carbonyl organometallic polymers, PFpP, as resists for high-resolution positive and negative electron beam lithography
journal, January 2015
- Zhang, J.; Cao, K.; Wang, X. S.
- Chemical Communications, Vol. 51, Issue 99
Direct writing of ZrO 2 on a sub-10 nm scale using an electron beam
journal, November 2003
- Subramanian, K. R. V.; Saifullah, M. S. M.; Tapley, E.
- Nanotechnology, Vol. 15, Issue 1
Study of nanometer resolution resist slope for the UVIII chemically amplified resist
journal, May 1999
- Gerardino, A.; Gentili, M.; Di Fabrizio, E.
- Microelectronic Engineering, Vol. 46, Issue 1-4
Ultrathin photoresists for 193-nm lithography
conference, June 2003
- Peters, Richard D.; Amblard, Gilles R.; Lee, Jen-Jiang
- Microlithography 2003, SPIE Proceedings
A Top Surface Imaging Method Using Area Selective ALD on Chemically Amplified Polymer Photoresist Films
journal, January 2006
- Sinha, Ashwini; Hess, Dennis W.; Henderson, Clifford L.
- Electrochemical and Solid-State Letters, Vol. 9, Issue 11
New Insight into the Mechanism of Sequential Infiltration Synthesis from Infrared Spectroscopy
journal, October 2014
- Biswas, Mahua; Libera, Joseph A.; Darling, Seth B.
- Chemistry of Materials, Vol. 26, Issue 21
Solubility studies of inorganic–organic hybrid nanoparticle photoresists with different surface functional groups
journal, January 2016
- Li, Li; Chakrabarty, Souvik; Jiang, Jing
- Nanoscale, Vol. 8, Issue 3
Optimized surface silylation of chemically amplified epoxidized photoresists for micromachining applications
journal, April 2010
- Kontziampasis, D.; Beltsios, K.; Tegou, E.
- Journal of Applied Polymer Science, Vol. 117, Issue 4, p. 2189-2195
Effect of Nanostructured Domains in Self-Assembled Block Copolymer Films on Sequential Infiltration Synthesis
journal, November 2017
- Peng, Qing; Tseng, Yu-Chih; Long, Yun
- Langmuir, Vol. 33, Issue 46
Surface imaging techniques
journal, March 1991
- Roland, B.
- Microelectronic Engineering, Vol. 13, Issue 1-4
Enhanced polymeric lithography resists via sequential infiltration synthesis
journal, July 2011
- Tseng, Yu-Chih; Peng, Qing; Ocola, Leonidas E.
- Journal of Materials Chemistry, Vol. 21, Issue 32, 11722-11725
Organosilicate polymer e-beam resists with high resolution, sensitivity and stability: Organosilicate polymer e-beam resists
journal, October 2013
- Lee, Sung-Il; Sim, Jae Hwan; Lee, Hae-Jeong
- Applied Organometallic Chemistry, Vol. 27, Issue 11
Novel Hybrid Organic-Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching
journal, August 2013
- Zanchetta, Erika; Giustina, Gioia Della; Grenci, Gianluca
- Advanced Materials, Vol. 25, Issue 43
Imaging results for resist films exposed to EUV radiation
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