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Title: Growth of GaP 1xy As y N x on Si substrates by chemical beam epitaxy

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]
  1. Electronics and Semiconductors Group, Applied Physics Department, Universidad Autónoma de Madrid, ES-28049 Madrid, Spain
  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  3. Electronics and Semiconductors Group, Applied Physics Department, Universidad Autónoma de Madrid, ES-28049 Madrid, Spain, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1560906
Grant/Contract Number:  
AC02-05CH11231.
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Ben Saddik, K., Braña, A. F., López, N., Walukiewicz, W., and García, B. J. Growth of GaP 1   −   x   −   y As y N x on Si substrates by chemical beam epitaxy. United States: N. p., 2019. Web. doi:10.1063/1.5111090.
Ben Saddik, K., Braña, A. F., López, N., Walukiewicz, W., & García, B. J. Growth of GaP 1   −   x   −   y As y N x on Si substrates by chemical beam epitaxy. United States. doi:10.1063/1.5111090.
Ben Saddik, K., Braña, A. F., López, N., Walukiewicz, W., and García, B. J. Sat . "Growth of GaP 1   −   x   −   y As y N x on Si substrates by chemical beam epitaxy". United States. doi:10.1063/1.5111090.
@article{osti_1560906,
title = {Growth of GaP 1   −   x   −   y As y N x on Si substrates by chemical beam epitaxy},
author = {Ben Saddik, K. and Braña, A. F. and López, N. and Walukiewicz, W. and García, B. J.},
abstractNote = {},
doi = {10.1063/1.5111090},
journal = {Journal of Applied Physics},
number = 10,
volume = 126,
place = {United States},
year = {2019},
month = {9}
}

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Works referenced in this record:

Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrate
journal, August 2001

  • Fujimoto, Yasuhiro; Yonezu, Hiroo; Utsumi, Atsushi
  • Applied Physics Letters, Vol. 79, Issue 9, p. 1306-1308
  • DOI: 10.1063/1.1395519

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156