Molecular beam epitaxy growth and optical properties of InAsSbBi

Schaefer, S. T.; Kosireddy, R. R.; Webster, P. T.; Johnson, S. R.

doi:10.1063/1.5098809

Title: Molecular beam epitaxy growth and optical properties of InAsSbBi

Authors:

Schaefer, S. T. ^[1]; Kosireddy, R. R. ^[2]; Webster, P. T. ^[3]; Johnson, S. R. ^[1]

Center for Photonics Innovation &, School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Center for Photonics Innovation &, School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287, USA
Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, New Mexico 87117, USA

Publication Date:: 2019-08-28

Sponsoring Org.:: USDOE

OSTI Identifier:: 1560702

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 8; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Schaefer, S. T., Kosireddy, R. R., Webster, P. T., and Johnson, S. R. Molecular beam epitaxy growth and optical properties of InAsSbBi.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5098809.

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                    Schaefer, S. T., Kosireddy, R. R., Webster, P. T., & Johnson, S. R. Molecular beam epitaxy growth and optical properties of InAsSbBi.  United States.  https://doi.org/10.1063/1.5098809

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                    Schaefer, S. T., Kosireddy, R. R., Webster, P. T., and Johnson, S. R. Wed .  
"Molecular beam epitaxy growth and optical properties of InAsSbBi".  United States.  https://doi.org/10.1063/1.5098809.

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@article{osti_1560702,

  title        = {Molecular beam epitaxy growth and optical properties of InAsSbBi},

  author       = {Schaefer, S. T. and Kosireddy, R. R. and Webster, P. T. and Johnson, S. R.},

  abstractNote = {},

  doi          = {10.1063/1.5098809},

  journal      = {Journal of Applied Physics},

  number       = 8,

  volume       = 126,

  place        = {United States},

  year         = {2019},

  month        = {8}

}

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Title: Molecular beam epitaxy growth and optical properties of InAsSbBi

Citation Formats

Effects of rapid thermal annealing on GaAs 1-x Bi x alloys journal, July 2012

Configuration dependence of band-gap narrowing and localization in dilute GaAs 1 − x Bi x alloys journal, May 2016

Some critical issues on growth of high quality Si and SiGe films using a solid-source molecular beam epitaxy system journal, December 1995

Bi isoelectronic impurities in GaAs journal, February 2008

Defects in epitaxial multilayers: I. Misfit dislocations journal, December 1974

Superlattice and Negative Differential Conductivity in Semiconductors journal, January 1970

Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices journal, June 2016

Valence-band anticrossing in mismatched III-V semiconductor alloys journal, January 2007

Temperature dependence of the dielectric function of germanium journal, August 1984

Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices journal, March 2014

Inhomogeneous broadening in the photoluminescence spectrum of CdS nanoparticles journal, August 1999

Photovoltaic effect and temperature dependence of the energy gap in the In 1− x Ga x Sb alloy system journal, April 1980

Die Konstitution der Mischkristalle und die Raumf�llung der Atome journal, January 1921

Composition of AlGaAs journal, February 1997

Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction journal, October 2016

Spectrally resolved localized states in GaAs 1− x Bi x journal, February 2017

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy journal, December 2015

Effects of Bi on band gap bowing in InP 1- xBix alloys journal, January 2018

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix journal, June 2008

Investigation of the photoluminescence-linewidth broadening in periodic multiple narrow asymmetric coupled quantum wells journal, August 1994

Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs 1 − x Bi x journal, February 2011

Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy journal, August 2017

Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon journal, November 1981

Band parameters for III–V compound semiconductors and their alloys journal, June 2001

Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs journal, February 2002

Defect density measurements of low temperature grown molecular beam epitaxial GaAs by photothermal deflection spectroscopy journal, August 1995

Defect formation in LT MBE InGaAs and GaAs journal, January 2004

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs journal, March 2012

Clustering effects in Ga(AsBi) journal, March 2010

Band anticrossing in highly mismatched III V semiconductor alloys journal, July 2002

Temperature dependence of the Urbach edge in GaAs journal, November 1995

Molecular beam epitaxy control and photoluminescence properties of InAsBi journal, March 2012

Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy journal, August 1990

Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant conference, March 2018

Bi flux-dependent MBE growth of GaSbBi alloys journal, September 2015

Origin of the large band-gap bowing in highly mismatched semiconductor alloys journal, January 2003

Effects of rapid thermal annealing on GaAs _1-x Bi _x alloys
journal, July 2012

Configuration dependence of band-gap narrowing and localization in dilute ${GaAs}_{1 - x} {Bi}_{x}$ alloys
journal, May 2016

Some critical issues on growth of high quality Si and SiGe films using a solid-source molecular beam epitaxy system
journal, December 1995

Bi isoelectronic impurities in GaAs
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Defects in epitaxial multilayers: I. Misfit dislocations
journal, December 1974

Superlattice and Negative Differential Conductivity in Semiconductors
journal, January 1970

Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices
journal, June 2016

Valence-band anticrossing in mismatched III-V semiconductor alloys
journal, January 2007

Temperature dependence of the dielectric function of germanium
journal, August 1984

Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices
journal, March 2014

Inhomogeneous broadening in the photoluminescence spectrum of CdS nanoparticles
journal, August 1999

Photovoltaic effect and temperature dependence of the energy gap in the In _{1− x} Ga _x Sb alloy system
journal, April 1980

Die Konstitution der Mischkristalle und die Raumf�llung der Atome
journal, January 1921

Composition of AlGaAs
journal, February 1997

Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction
journal, October 2016

Spectrally resolved localized states in GaAs ₁₋ _x Bi _x
journal, February 2017

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
journal, December 2015

Effects of Bi on band gap bowing in InP _1- xBix alloys
journal, January 2018

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix
journal, June 2008

Investigation of the photoluminescence-linewidth broadening in periodic multiple narrow asymmetric coupled quantum wells
journal, August 1994

Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs $_{1 - x}$ Bi $_{x}$
journal, February 2011

Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy
journal, August 2017

Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon
journal, November 1981

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
journal, February 2002

Defect density measurements of low temperature grown molecular beam epitaxial GaAs by photothermal deflection spectroscopy
journal, August 1995

Defect formation in LT MBE InGaAs and GaAs
journal, January 2004

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs
journal, March 2012

Clustering effects in Ga(AsBi)
journal, March 2010

Band anticrossing in highly mismatched III V semiconductor alloys
journal, July 2002

Temperature dependence of the Urbach edge in GaAs
journal, November 1995

Molecular beam epitaxy control and photoluminescence properties of InAsBi
journal, March 2012

Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy
journal, August 1990

Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant
conference, March 2018

Bi flux-dependent MBE growth of GaSbBi alloys
journal, September 2015

Origin of the large band-gap bowing in highly mismatched semiconductor alloys
journal, January 2003