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Title: Molecular beam epitaxy growth and optical properties of InAsSbBi

Authors:
 [1];  [2];  [3];  [1]
  1. Center for Photonics Innovation &, School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
  2. Center for Photonics Innovation &, School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287, USA
  3. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, New Mexico 87117, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1560702
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 8; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Schaefer, S. T., Kosireddy, R. R., Webster, P. T., and Johnson, S. R. Molecular beam epitaxy growth and optical properties of InAsSbBi. United States: N. p., 2019. Web. https://doi.org/10.1063/1.5098809.
Schaefer, S. T., Kosireddy, R. R., Webster, P. T., & Johnson, S. R. Molecular beam epitaxy growth and optical properties of InAsSbBi. United States. https://doi.org/10.1063/1.5098809
Schaefer, S. T., Kosireddy, R. R., Webster, P. T., and Johnson, S. R. Wed . "Molecular beam epitaxy growth and optical properties of InAsSbBi". United States. https://doi.org/10.1063/1.5098809.
@article{osti_1560702,
title = {Molecular beam epitaxy growth and optical properties of InAsSbBi},
author = {Schaefer, S. T. and Kosireddy, R. R. and Webster, P. T. and Johnson, S. R.},
abstractNote = {},
doi = {10.1063/1.5098809},
journal = {Journal of Applied Physics},
number = 8,
volume = 126,
place = {United States},
year = {2019},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.5098809

Citation Metrics:
Cited by: 3 works
Citation information provided by
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