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Title: Long mean free paths of room-temperature THz acoustic phonons in a high thermal conductivity material

Abstract

We report measurements of room-temperature mean free paths of long-lived THz acoustic phonons in wurtzite GaN. Longitudinal phonon wave packets are excited and probed by femtosecond laser pulses in two InGaN-GaN multiple quantum well structures separated by a GaN layer. By measuring the temperature dependence of the phonon attenuation in the range 80–300 K we isolate the intrinsic phonon mean free path at 300 K which is found to be 5.3 and 3.5 μm at 1.06 and 1.43 THz, respectively. The measurements are found to be in good agreement with ab initio calculations which show that the main channel of the acoustic phonon decay is a three-phonon scattering process involving the acoustic phonon and two high-frequency optical phonons. Here, our results indicate that the contribution of low-THz acoustic phonons to thermal transport in GaN is relatively smaller than in Si; thus finite size effects are expected to be less important in GaN.

Authors:
 [1]; ORCiD logo [2];  [3];  [4];  [4];  [4];  [5];  [3]; ORCiD logo [1]
  1. National Taiwan Univ., Taipei (Taiwan)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  4. Univ. of Houston, Houston, TX (United States)
  5. Univ. of Houston, Houston, TX (United States); Academia Sinica, Taipei (Taiwan)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1560498
Alternate Identifier(s):
OSTI ID: 1560312
Grant/Contract Number:  
AC05-00OR22725; FG02-00ER15087
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 100; Journal Issue: 9; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chou, Ting -Han, Lindsay, Lucas R., Maznev, Alexei A., Gandhi, Jateen S., Stokes, Donna W., Forrest, Rebecca L., Bensaoula, Abdelhak, Nelson, Keith A., and Sun, Chi -Kuang. Long mean free paths of room-temperature THz acoustic phonons in a high thermal conductivity material. United States: N. p., 2019. Web. https://doi.org/10.1103/PhysRevB.100.094302.
Chou, Ting -Han, Lindsay, Lucas R., Maznev, Alexei A., Gandhi, Jateen S., Stokes, Donna W., Forrest, Rebecca L., Bensaoula, Abdelhak, Nelson, Keith A., & Sun, Chi -Kuang. Long mean free paths of room-temperature THz acoustic phonons in a high thermal conductivity material. United States. https://doi.org/10.1103/PhysRevB.100.094302
Chou, Ting -Han, Lindsay, Lucas R., Maznev, Alexei A., Gandhi, Jateen S., Stokes, Donna W., Forrest, Rebecca L., Bensaoula, Abdelhak, Nelson, Keith A., and Sun, Chi -Kuang. Wed . "Long mean free paths of room-temperature THz acoustic phonons in a high thermal conductivity material". United States. https://doi.org/10.1103/PhysRevB.100.094302. https://www.osti.gov/servlets/purl/1560498.
@article{osti_1560498,
title = {Long mean free paths of room-temperature THz acoustic phonons in a high thermal conductivity material},
author = {Chou, Ting -Han and Lindsay, Lucas R. and Maznev, Alexei A. and Gandhi, Jateen S. and Stokes, Donna W. and Forrest, Rebecca L. and Bensaoula, Abdelhak and Nelson, Keith A. and Sun, Chi -Kuang},
abstractNote = {We report measurements of room-temperature mean free paths of long-lived THz acoustic phonons in wurtzite GaN. Longitudinal phonon wave packets are excited and probed by femtosecond laser pulses in two InGaN-GaN multiple quantum well structures separated by a GaN layer. By measuring the temperature dependence of the phonon attenuation in the range 80–300 K we isolate the intrinsic phonon mean free path at 300 K which is found to be 5.3 and 3.5 μm at 1.06 and 1.43 THz, respectively. The measurements are found to be in good agreement with ab initio calculations which show that the main channel of the acoustic phonon decay is a three-phonon scattering process involving the acoustic phonon and two high-frequency optical phonons. Here, our results indicate that the contribution of low-THz acoustic phonons to thermal transport in GaN is relatively smaller than in Si; thus finite size effects are expected to be less important in GaN.},
doi = {10.1103/PhysRevB.100.094302},
journal = {Physical Review B},
number = 9,
volume = 100,
place = {United States},
year = {2019},
month = {9}
}

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