Monte Carlo modeling of thin GaAs photocathodes

Liu, Wei; Wang, Erdong

doi:10.1063/1.5113804

Title: Monte Carlo modeling of thin GaAs photocathodes

Abstract

A Monte Carlo model was developed to simulate electron transport and emission from thin GaAs photocathodes with different active layer thicknesses and dopant concentrations. The simulation accurately predicts expected behavior, namely, quantum efficiency (QE) is enhanced for thicker GaAs photocathodes and for higher dopant concentrations. More significantly, the simulation predicts that electrons excited to the conduction band of the GaAs can be reflected by the band bending regions of the AlGaAs barrier layer, which contributes to enhance QE. The simulation also predicts that electrons in the conduction band suffer more scattering for thicker GaAs photocathodes and for higher dopant concentration, leading to longer emission response time. This Monte Carlo model will improve our understanding and predicting of the performance of more complicated GaAs-based heterojunction structures composed of multiple thin layers.

Authors:

^[1];

^[2]

Brookhaven National Laboratory, Upton, New York 11973, USA
Brookhaven National Lab. (BNL), Upton, NY (United States)

Publication Date:: Mon Aug 19 00:00:00 EDT 2019

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Nuclear Physics (NP)

OSTI Identifier:: 1560005

Alternate Identifier(s):: OSTI ID: 1567952

Report Number(s):: BNL-212028-2019-JAAM
Journal ID: ISSN 0021-8979; TRN: US2000443

Grant/Contract Number:: SC0012704

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 126; Journal Issue: 7; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 43 PARTICLE ACCELERATORS

Citation Formats


                    Liu, Wei, and Wang, Erdong. Monte Carlo modeling of thin GaAs photocathodes.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5113804.

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                    Liu, Wei, & Wang, Erdong. Monte Carlo modeling of thin GaAs photocathodes.  United States.  https://doi.org/10.1063/1.5113804

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                    Liu, Wei, and Wang, Erdong. Mon .  
"Monte Carlo modeling of thin GaAs photocathodes".  United States.  https://doi.org/10.1063/1.5113804.  https://www.osti.gov/servlets/purl/1560005.

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@article{osti_1560005,

  title        = {Monte Carlo modeling of thin GaAs photocathodes},

  author       = {Liu, Wei and Wang, Erdong},

  abstractNote = {A Monte Carlo model was developed to simulate electron transport and emission from thin GaAs photocathodes with different active layer thicknesses and dopant concentrations. The simulation accurately predicts expected behavior, namely, quantum efficiency (QE) is enhanced for thicker GaAs photocathodes and for higher dopant concentrations. More significantly, the simulation predicts that electrons excited to the conduction band of the GaAs can be reflected by the band bending regions of the AlGaAs barrier layer, which contributes to enhance QE. The simulation also predicts that electrons in the conduction band suffer more scattering for thicker GaAs photocathodes and for higher dopant concentration, leading to longer emission response time. This Monte Carlo model will improve our understanding and predicting of the performance of more complicated GaAs-based heterojunction structures composed of multiple thin layers.},

  doi          = {10.1063/1.5113804},

  journal      = {Journal of Applied Physics},

  number       = 7,

  volume       = 126,

  place        = {United States},

  year         = {Mon Aug 19 00:00:00 EDT 2019},

  month        = {Mon Aug 19 00:00:00 EDT 2019}

}

Copy to clipboard

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Similar Records

Title: Monte Carlo modeling of thin GaAs photocathodes

Abstract

Citation Formats

Spin relaxation of photoelectrons in p -type gallium arsenide journal, July 1977

Ultrabright and Ultrafast III–V Semiconductor Photocathodes journal, March 2014

Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design journal, August 1982

Modern theory and applications of photocathodes conference, October 1993

Semiconducting and other major properties of gallium arsenide journal, October 1982

Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution journal, August 2015

Monte Carlo investigation of the electron-hole-interaction effects on the ultrafast relaxation of hot photoexcited carriers in GaAs journal, October 1987

Reducing the contribution of the photoemission process to the unwanted beam in photoelectron sources at accelerators journal, September 2017

Effects of atomic hydrogen and deuterium exposure on high polarization GaAs photocathodes journal, December 2005

Pulse response of thin III/V semiconductor photocathodes journal, December 2002

Record high-average current from a high-brightness photoinjector journal, January 2013

Photoemissive, Photoconductive, and Optical Absorption Studies of Alkali-Antimony Compounds journal, October 1958

Picosecond polarized electron bunches from a strained layer GaAsP photocathode journal, September 1996

Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering journal, February 1956

Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range journal, September 1972

A Monte Carlo study for minority‐electron transport in p ‐GaAs journal, July 1990

Femtosecond luminescence measurements of the intersubband scattering rate in Al x Ga 1 − x As/GaAs quantum wells under selective excitation journal, November 1996

Electron transverse energy distribution in GaAs negative electron affinity cathodes: Calculations compared to experiments journal, August 1996

Electron scattering by ionized impurities in semiconductors journal, October 1981

Monte Carlo simulation of III-nitride photocathodes journal, March 2018

GaAs, AlAs, and Al x Ga 1− x As: Material parameters for use in research and device applications journal, August 1985

Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy journal, November 2016

A diffusion model for picosecond electron bunches from negative electron affinity GaAs photocathodes journal, August 1999

A comprehensive evaluation of factors that influence the spin polarization of electrons emitted from bulk GaAs photocathodes journal, July 2017

Thermal emittance and response time measurements of negative electron affinity photocathodes journal, March 2008

Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes journal, March 2013

Photoemission characteristics of thin GaAs-based heterojunction photocathodes journal, January 2015

A new teaching approach to quantum mechanical tunneling journal, September 1999

Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector journal, December 2016

Calculated electron energy distribution of negative electron affinity cathodes journal, August 1999

Narrow cone emission from negative electron affinity photocathodes journal, January 2005

Experimental determination of the GaAs and Ga 1 − x Al x As band-gap energy dependence on temperature and aluminum mole fraction in the direct band-gap region journal, August 1993

Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering journal, March 1957

Electronic Structure and Optical Properties of Semiconductors journal, February 1990

Spin relaxation of photoelectrons in $p$ -type gallium arsenide
journal, July 1977

Ultrabright and Ultrafast III–V Semiconductor Photocathodes
journal, March 2014

Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design
journal, August 1982

Modern theory and applications of photocathodes
conference, October 1993

Semiconducting and other major properties of gallium arsenide
journal, October 1982

Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution
journal, August 2015

Monte Carlo investigation of the electron-hole-interaction effects on the ultrafast relaxation of hot photoexcited carriers in GaAs
journal, October 1987

Reducing the contribution of the photoemission process to the unwanted beam in photoelectron sources at accelerators
journal, September 2017

Effects of atomic hydrogen and deuterium exposure on high polarization GaAs photocathodes
journal, December 2005

Pulse response of thin III/V semiconductor photocathodes
journal, December 2002

Record high-average current from a high-brightness photoinjector
journal, January 2013

Photoemissive, Photoconductive, and Optical Absorption Studies of Alkali-Antimony Compounds
journal, October 1958

Picosecond polarized electron bunches from a strained layer GaAsP photocathode
journal, September 1996

Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
journal, February 1956

Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range
journal, September 1972

A Monte Carlo study for minority‐electron transport in p ‐GaAs
journal, July 1990

Femtosecond luminescence measurements of the intersubband scattering rate in ${Al}_{x}$ ${Ga}_{1 - x}$ As/GaAs quantum wells under selective excitation
journal, November 1996

Electron transverse energy distribution in GaAs negative electron affinity cathodes: Calculations compared to experiments
journal, August 1996

Electron scattering by ionized impurities in semiconductors
journal, October 1981

Monte Carlo simulation of III-nitride photocathodes
journal, March 2018

GaAs, AlAs, and Al _x Ga _{1− x} As: Material parameters for use in research and device applications
journal, August 1985

Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy
journal, November 2016

A diffusion model for picosecond electron bunches from negative electron affinity GaAs photocathodes
journal, August 1999

A comprehensive evaluation of factors that influence the spin polarization of electrons emitted from bulk GaAs photocathodes
journal, July 2017

Thermal emittance and response time measurements of negative electron affinity photocathodes
journal, March 2008

Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes
journal, March 2013

Photoemission characteristics of thin GaAs-based heterojunction photocathodes
journal, January 2015

A new teaching approach to quantum mechanical tunneling
journal, September 1999

Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector
journal, December 2016

Calculated electron energy distribution of negative electron affinity cathodes
journal, August 1999

Narrow cone emission from negative electron affinity photocathodes
journal, January 2005

Experimental determination of the GaAs and ${Ga}_{1 - x}$ ${Al}_{x}$ As band-gap energy dependence on temperature and aluminum mole fraction in the direct band-gap region
journal, August 1993

Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
journal, March 1957

Electronic Structure and Optical Properties of Semiconductors
journal, February 1990