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Title: Monte Carlo modeling of thin GaAs photocathodes

Abstract

A Monte Carlo model was developed to simulate electron transport and emission from thin GaAs photocathodes with different active layer thicknesses and dopant concentrations. The simulation accurately predicts expected behavior, namely, quantum efficiency (QE) is enhanced for thicker GaAs photocathodes and for higher dopant concentrations. More significantly, the simulation predicts that electrons excited to the conduction band of the GaAs can be reflected by the band bending regions of the AlGaAs barrier layer, which contributes to enhance QE. The simulation also predicts that electrons in the conduction band suffer more scattering for thicker GaAs photocathodes and for higher dopant concentration, leading to longer emission response time. This Monte Carlo model will improve our understanding and predicting of the performance of more complicated GaAs-based heterojunction structures composed of multiple thin layers.

Authors:
ORCiD logo [1]; ORCiD logo [2]
  1. Brookhaven National Laboratory, Upton, New York 11973, USA
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Nuclear Physics (NP) (SC-26)
OSTI Identifier:
1560005
Alternate Identifier(s):
OSTI ID: 1567952
Report Number(s):
BNL-212028-2019-JAAM
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 7; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS

Citation Formats

Liu, Wei, and Wang, Erdong. Monte Carlo modeling of thin GaAs photocathodes. United States: N. p., 2019. Web. doi:10.1063/1.5113804.
Liu, Wei, & Wang, Erdong. Monte Carlo modeling of thin GaAs photocathodes. United States. doi:10.1063/1.5113804.
Liu, Wei, and Wang, Erdong. Mon . "Monte Carlo modeling of thin GaAs photocathodes". United States. doi:10.1063/1.5113804.
@article{osti_1560005,
title = {Monte Carlo modeling of thin GaAs photocathodes},
author = {Liu, Wei and Wang, Erdong},
abstractNote = {A Monte Carlo model was developed to simulate electron transport and emission from thin GaAs photocathodes with different active layer thicknesses and dopant concentrations. The simulation accurately predicts expected behavior, namely, quantum efficiency (QE) is enhanced for thicker GaAs photocathodes and for higher dopant concentrations. More significantly, the simulation predicts that electrons excited to the conduction band of the GaAs can be reflected by the band bending regions of the AlGaAs barrier layer, which contributes to enhance QE. The simulation also predicts that electrons in the conduction band suffer more scattering for thicker GaAs photocathodes and for higher dopant concentration, leading to longer emission response time. This Monte Carlo model will improve our understanding and predicting of the performance of more complicated GaAs-based heterojunction structures composed of multiple thin layers.},
doi = {10.1063/1.5113804},
journal = {Journal of Applied Physics},
number = 7,
volume = 126,
place = {United States},
year = {2019},
month = {8}
}

Journal Article:
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