Thermal expansion coefficients of high thermal conducting BAs and BP materials
Abstract
Recently reported very high thermal conductivities in cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully facilitate such an application, the compatible coefficient of thermal expansion (CTE) between the heat spreader and the device substrate, in order to minimize the thermal stress, needs to be considered. Here, we report our experimental CTE studies of BAs and BP in the temperature range from 100 K to 1150 K, through a combination of X-ray single crystal diffraction and neutron powder diffraction. Here, we demonstrated that the room temperature CTEs, 3.6 ± 0.15 × 10–6/K for BAs and 3.2 ± 0.2 × 10–6/K for BP, are more compatible with most of the semiconductors including Si and GaAs, in comparison with diamond, and thus could be better candidates for the future heat spreader materials in power electronic devices.
- Authors:
-
[2];
[2];
[2];
[1]
- The Univ. of Texas at Dallas, Richardson, TX (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Univ. of Houston, Houston, TX (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1559591
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 1; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Li, Sheng, Taddei, Keith M., Wang, Xiqu, Wu, Hanlin, Neuefeind, Jörg C., Zackaria, Davis, Liu, Xiaoyuan, Dela Cruz, Clarina R., and Lv, Bing. Thermal expansion coefficients of high thermal conducting BAs and BP materials. United States: N. p., 2019.
Web. doi:10.1063/1.5103166.
Li, Sheng, Taddei, Keith M., Wang, Xiqu, Wu, Hanlin, Neuefeind, Jörg C., Zackaria, Davis, Liu, Xiaoyuan, Dela Cruz, Clarina R., & Lv, Bing. Thermal expansion coefficients of high thermal conducting BAs and BP materials. United States. doi:https://doi.org/10.1063/1.5103166
Li, Sheng, Taddei, Keith M., Wang, Xiqu, Wu, Hanlin, Neuefeind, Jörg C., Zackaria, Davis, Liu, Xiaoyuan, Dela Cruz, Clarina R., and Lv, Bing. Mon .
"Thermal expansion coefficients of high thermal conducting BAs and BP materials". United States. doi:https://doi.org/10.1063/1.5103166. https://www.osti.gov/servlets/purl/1559591.
@article{osti_1559591,
title = {Thermal expansion coefficients of high thermal conducting BAs and BP materials},
author = {Li, Sheng and Taddei, Keith M. and Wang, Xiqu and Wu, Hanlin and Neuefeind, Jörg C. and Zackaria, Davis and Liu, Xiaoyuan and Dela Cruz, Clarina R. and Lv, Bing},
abstractNote = {Recently reported very high thermal conductivities in cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully facilitate such an application, the compatible coefficient of thermal expansion (CTE) between the heat spreader and the device substrate, in order to minimize the thermal stress, needs to be considered. Here, we report our experimental CTE studies of BAs and BP in the temperature range from 100 K to 1150 K, through a combination of X-ray single crystal diffraction and neutron powder diffraction. Here, we demonstrated that the room temperature CTEs, 3.6 ± 0.15 × 10–6/K for BAs and 3.2 ± 0.2 × 10–6/K for BP, are more compatible with most of the semiconductors including Si and GaAs, in comparison with diamond, and thus could be better candidates for the future heat spreader materials in power electronic devices.},
doi = {10.1063/1.5103166},
journal = {Applied Physics Letters},
number = 1,
volume = 115,
place = {United States},
year = {2019},
month = {7}
}
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