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Title: Thermal expansion coefficients of high thermal conducting BAs and BP materials

Abstract

Recently reported very high thermal conductivities in cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully facilitate such an application, the compatible coefficient of thermal expansion (CTE) between the heat spreader and the device substrate, in order to minimize the thermal stress, needs to be considered. Here, we report our experimental CTE studies of BAs and BP in the temperature range from 100 K to 1150 K, through a combination of X-ray single crystal diffraction and neutron powder diffraction. Here, we demonstrated that the room temperature CTEs, 3.6 ± 0.15 × 10 –6/K for BAs and 3.2 ± 0.2 × 10 –6/K for BP, are more compatible with most of the semiconductors including Si and GaAs, in comparison with diamond, and thus could be better candidates for the future heat spreader materials in power electronic devices.

Authors:
 [1]; ORCiD logo [2];  [3];  [1]; ORCiD logo [2];  [1];  [1]; ORCiD logo [2]; ORCiD logo [1]
  1. The Univ. of Texas at Dallas, Richardson, TX (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Univ. of Houston, Houston, TX (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1559591
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 115; Journal Issue: 1; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Li, Sheng, Taddei, Keith M., Wang, Xiqu, Wu, Hanlin, Neuefeind, Jörg C., Zackaria, Davis, Liu, Xiaoyuan, Dela Cruz, Clarina R., and Lv, Bing. Thermal expansion coefficients of high thermal conducting BAs and BP materials. United States: N. p., 2019. Web. doi:10.1063/1.5103166.
Li, Sheng, Taddei, Keith M., Wang, Xiqu, Wu, Hanlin, Neuefeind, Jörg C., Zackaria, Davis, Liu, Xiaoyuan, Dela Cruz, Clarina R., & Lv, Bing. Thermal expansion coefficients of high thermal conducting BAs and BP materials. United States. doi:10.1063/1.5103166.
Li, Sheng, Taddei, Keith M., Wang, Xiqu, Wu, Hanlin, Neuefeind, Jörg C., Zackaria, Davis, Liu, Xiaoyuan, Dela Cruz, Clarina R., and Lv, Bing. Mon . "Thermal expansion coefficients of high thermal conducting BAs and BP materials". United States. doi:10.1063/1.5103166.
@article{osti_1559591,
title = {Thermal expansion coefficients of high thermal conducting BAs and BP materials},
author = {Li, Sheng and Taddei, Keith M. and Wang, Xiqu and Wu, Hanlin and Neuefeind, Jörg C. and Zackaria, Davis and Liu, Xiaoyuan and Dela Cruz, Clarina R. and Lv, Bing},
abstractNote = {Recently reported very high thermal conductivities in cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully facilitate such an application, the compatible coefficient of thermal expansion (CTE) between the heat spreader and the device substrate, in order to minimize the thermal stress, needs to be considered. Here, we report our experimental CTE studies of BAs and BP in the temperature range from 100 K to 1150 K, through a combination of X-ray single crystal diffraction and neutron powder diffraction. Here, we demonstrated that the room temperature CTEs, 3.6 ± 0.15 × 10–6/K for BAs and 3.2 ± 0.2 × 10–6/K for BP, are more compatible with most of the semiconductors including Si and GaAs, in comparison with diamond, and thus could be better candidates for the future heat spreader materials in power electronic devices.},
doi = {10.1063/1.5103166},
journal = {Applied Physics Letters},
number = 1,
volume = 115,
place = {United States},
year = {2019},
month = {7}
}

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