Thermal expansion coefficients of high thermal conducting BAs and BP materials
Abstract
Recently reported very high thermal conductivities in cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully facilitate such an application, the compatible coefficient of thermal expansion (CTE) between the heat spreader and the device substrate, in order to minimize the thermal stress, needs to be considered. Here, we report our experimental CTE studies of BAs and BP in the temperature range from 100 K to 1150 K, through a combination of X-ray single crystal diffraction and neutron powder diffraction. Here, we demonstrated that the room temperature CTEs, 3.6 ± 0.15 × 10–6/K for BAs and 3.2 ± 0.2 × 10–6/K for BP, are more compatible with most of the semiconductors including Si and GaAs, in comparison with diamond, and thus could be better candidates for the future heat spreader materials in power electronic devices.
- Authors:
-
- The Univ. of Texas at Dallas, Richardson, TX (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Univ. of Houston, Houston, TX (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1559591
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 1; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Li, Sheng, Taddei, Keith M., Wang, Xiqu, Wu, Hanlin, Neuefeind, Jörg C., Zackaria, Davis, Liu, Xiaoyuan, Dela Cruz, Clarina R., and Lv, Bing. Thermal expansion coefficients of high thermal conducting BAs and BP materials. United States: N. p., 2019.
Web. doi:10.1063/1.5103166.
Li, Sheng, Taddei, Keith M., Wang, Xiqu, Wu, Hanlin, Neuefeind, Jörg C., Zackaria, Davis, Liu, Xiaoyuan, Dela Cruz, Clarina R., & Lv, Bing. Thermal expansion coefficients of high thermal conducting BAs and BP materials. United States. https://doi.org/10.1063/1.5103166
Li, Sheng, Taddei, Keith M., Wang, Xiqu, Wu, Hanlin, Neuefeind, Jörg C., Zackaria, Davis, Liu, Xiaoyuan, Dela Cruz, Clarina R., and Lv, Bing. Mon .
"Thermal expansion coefficients of high thermal conducting BAs and BP materials". United States. https://doi.org/10.1063/1.5103166. https://www.osti.gov/servlets/purl/1559591.
@article{osti_1559591,
title = {Thermal expansion coefficients of high thermal conducting BAs and BP materials},
author = {Li, Sheng and Taddei, Keith M. and Wang, Xiqu and Wu, Hanlin and Neuefeind, Jörg C. and Zackaria, Davis and Liu, Xiaoyuan and Dela Cruz, Clarina R. and Lv, Bing},
abstractNote = {Recently reported very high thermal conductivities in cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully facilitate such an application, the compatible coefficient of thermal expansion (CTE) between the heat spreader and the device substrate, in order to minimize the thermal stress, needs to be considered. Here, we report our experimental CTE studies of BAs and BP in the temperature range from 100 K to 1150 K, through a combination of X-ray single crystal diffraction and neutron powder diffraction. Here, we demonstrated that the room temperature CTEs, 3.6 ± 0.15 × 10–6/K for BAs and 3.2 ± 0.2 × 10–6/K for BP, are more compatible with most of the semiconductors including Si and GaAs, in comparison with diamond, and thus could be better candidates for the future heat spreader materials in power electronic devices.},
doi = {10.1063/1.5103166},
journal = {Applied Physics Letters},
number = 1,
volume = 115,
place = {United States},
year = {2019},
month = {7}
}
Web of Science
Figures / Tables:

Works referenced in this record:
Thermal conductivity of GaN, , and SiC from 150 K to 850 K
journal, January 2019
- Zheng, Qiye; Li, Chunhua; Rai, Akash
- Physical Review Materials, Vol. 3, Issue 1
Unusual high thermal conductivity in boron arsenide bulk crystals
journal, July 2018
- Tian, Fei; Song, Bai; Chen, Xi
- Science, Vol. 361, Issue 6402
Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition
journal, July 2000
- Tsubota, Toshiki; Ohta, Masanari; Kusakabe, Katsuki
- Diamond and Related Materials, Vol. 9, Issue 7
Thermal conductivity of diamond composites sintered under high pressures
journal, April 2008
- Ekimov, E. A.; Suetin, N. V.; Popovich, A. F.
- Diamond and Related Materials, Vol. 17, Issue 4-5
EXPGUI , a graphical user interface for GSAS
journal, April 2001
- Toby, Brian H.
- Journal of Applied Crystallography, Vol. 34, Issue 2
High Thermal Conductivity in Isotopically Enriched Cubic Boron Phosphide
journal, September 2018
- Zheng, Qiye; Li, Sheng; Li, Chunhua
- Advanced Functional Materials, Vol. 28, Issue 43
A suite-level review of the neutron powder diffraction instruments at Oak Ridge National Laboratory
journal, September 2018
- Calder, S.; An, K.; Boehler, R.
- Review of Scientific Instruments, Vol. 89, Issue 9
Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate
journal, December 2015
- Padavala, Balabalaji; Frye, C. D.; Wang, Xuejing
- Crystal Growth & Design, Vol. 16, Issue 2
Thermal expansion coefficient of GaAs and InP
journal, June 1982
- Soma, T.; Satoh, J.; Matsuo, H.
- Solid State Communications, Vol. 42, Issue 12
Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide
journal, September 2015
- Padavala, Balabalaji; Frye, C. D.; Ding, Zihao
- Solid State Sciences, Vol. 47
Thermal conductivity of diamond between 170 and 1200 K and the isotope effect
journal, June 1993
- Olson, J. R.; Pohl, R. O.; Vandersande, J. W.
- Physical Review B, Vol. 47, Issue 22
Analysis of a platform for thermal management studies of microelectronics cooling methods
journal, October 2013
- Tigner, Julaunica; Sedeh, Mahmoud Moeini; Sharpe, Trena
- Applied Thermal Engineering, Vol. 60, Issue 1-2
Thermal Expansion of Silicon and Zinc Oxide (I)
journal, January 1969
- Ibach, H.
- physica status solidi (b), Vol. 31, Issue 2
Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
journal, May 1964
- Glassbrenner, C. J.; Slack, Glen A.
- Physical Review, Vol. 134, Issue 4A
First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?
journal, July 2013
- Lindsay, L.; Broido, D. A.; Reinecke, T. L.
- Physical Review Letters, Vol. 111, Issue 2, Article No. 025901
Thermal expansion of some diamondlike crystals
journal, January 1975
- Slack, Glen A.; Bartram, S. F.
- Journal of Applied Physics, Vol. 46, Issue 1
Experimental observation of high thermal conductivity in boron arsenide
journal, July 2018
- Kang, Joon Sang; Li, Man; Wu, Huan
- Science, Vol. 361, Issue 6402
Thermal Management of On-Chip Hot Spot
journal, April 2012
- Bar-Cohen, Avram; Wang, Peng
- Journal of Heat Transfer, Vol. 134, Issue 5
Linear Thermal Expansion Coefficient of Silicon from 293 to 1000 K
journal, January 2004
- Watanabe, Hiromichi; Yamada, Naofumi; Okaji, Masahiro
- International Journal of Thermophysics, Vol. 25, Issue 1
Mechanical properties of a diamond–copper composite with high thermal conductivity
journal, December 2015
- Abyzov, Andrey M.; Shakhov, Fedor M.; Averkin, Andrey I.
- Materials & Design, Vol. 87
Emerging challenges and materials for thermal management of electronics
journal, May 2014
- Moore, Arden L.; Shi, Li
- Materials Today, Vol. 17, Issue 4
Certification of NIST Standard Reference Material 640d
journal, June 2010
- Black, David R.; Windover, Donald; Henins, Albert
- Powder Diffraction, Vol. 25, Issue 2
Thermal Conductivity of GaAs and GaAs 1− x P x Laser Semiconductors
journal, February 1965
- Carlson, R. O.; Slack, G. A.; Silverman, S. J.
- Journal of Applied Physics, Vol. 36, Issue 2
Thermal performance of heat spreader for electronics cooling with incorporated phase change material
journal, March 2012
- Jaworski, Maciej
- Applied Thermal Engineering, Vol. 35
High thermal conductivity in cubic boron arsenide crystals
journal, July 2018
- Li, Sheng; Zheng, Qiye; Lv, Yinchuan
- Science, Vol. 361, Issue 6402
Thermal properties of diamond/copper composite material
journal, February 2004
- Yoshida, Katsuhito; Morigami, Hideaki
- Microelectronics Reliability, Vol. 44, Issue 2
ADDIE: ADvanced DIffraction Environment – a software environment for analyzing neutron diffraction data
journal, December 2017
- McDonnell, M. T.; Olds, D. P.; Page, K. L.
- Acta Crystallographica Section A Foundations and Advances, Vol. 73, Issue a1
Thermal Management of On-Chip Hot Spot
conference, October 2010
- Bar-Cohen, Avram; Wang, Peng
- ASME 2009 Second International Conference on Micro/Nanoscale Heat and Mass Transfer, Volume 3
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