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Title: Low-loss single-photon NbN microwave resonators on Si

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1];  [2]
+ Show Author Affiliations
  1. High Energy Physics Division, Argonne National Laboratory, Lemont, Illinois 60559, USA, Kavli Institute for Cosmological Physics, University of Chicago, Chicago Illinois 60637, USA
  2. Material Science Division, Argonne National Laboratory, Lemont, Illinois 60559, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1559373
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Carter, Faustin W., Khaire, Trupti, Chang, Clarence, and Novosad, Valentyn. Low-loss single-photon NbN microwave resonators on Si. United States: N. p., 2019. Web. doi:10.1063/1.5115276.
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Carter, Faustin W., Khaire, Trupti, Chang, Clarence, & Novosad, Valentyn. Low-loss single-photon NbN microwave resonators on Si. United States. doi:10.1063/1.5115276.
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Carter, Faustin W., Khaire, Trupti, Chang, Clarence, and Novosad, Valentyn. Mon . "Low-loss single-photon NbN microwave resonators on Si". United States. doi:10.1063/1.5115276.
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@article{osti_1559373,
title = {Low-loss single-photon NbN microwave resonators on Si},
author = {Carter, Faustin W. and Khaire, Trupti and Chang, Clarence and Novosad, Valentyn},
abstractNote = {},
doi = {10.1063/1.5115276},
journal = {Applied Physics Letters},
number = 9,
volume = 115,
place = {United States},
year = {2019},
month = {8}
}
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This content will become publicly available on August 29, 2020
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DOI:  10.1063/1.5115276
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