Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry

Dong, Sining; Wang, Yong-Lei; Bac, Seul-Ki; Liu, Xinyu; Vlasko-Vlasov, Vitalii; Kwok, Wai-Kwong; Rouvimov, Sergei; Lee, Sanghoon; Dobrowolska, Margaret; Furdyna, Jacek K.

doi:10.1103/PhysRevMaterials.3.074407

Title: Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry

Journal Article · 19 July 2019 · Physical Review Materials

DOI: https://doi.org/10.1103/PhysRevMaterials.3.074407 · OSTI ID:1559286

Dong, Sining ^[1]; Wang, Yong-Lei ^[1]; Bac, Seul-Ki ^[2]; Liu, Xinyu ^[3]; Vlasko-Vlasov, Vitalii ^[4]; Kwok, Wai-Kwong ^[4]; Rouvimov, Sergei ^[3]; Lee, Sanghoon ^[5]; Dobrowolska, Margaret ^[3]; Furdyna, Jacek K. ^[3]

Univ. of Notre Dame, IN (United States); Argonne National Lab. (ANL), Argonne, IL (United States); Nanjing Univ. (China)
Univ. of Notre Dame, IN (United States); Korea Univ., Seoul (Korea, Republic of)
Univ. of Notre Dame, IN (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Korea Univ., Seoul (Korea, Republic of)

We report on the observation of a field-induced magnetic bias effect in a Ga_0.94Mn_0.06As_1-yP_y thin film with digitally graded phosphorus content. Although phosphorus concentration in the sample is changed in steps from y approximate to 0.03 to y approximate to 0.28, the magnetometry and magnetotransport data display a coherent magnetic response typical for single-layer in-plane magnetized films with cubic and weak [110] uniaxial anisotropy. Unexpectedly, low-temperature planar Hall resistance loops exhibit remarkable asymmetry tunable by application of strong in-plane initial magnetic field H_Ini. We discuss this unusual memory effect, resembling the magnetization asymmetry in the exchange biased magnetic bilayers, in terms of a unidirectional bias field H_b induced by H_Ini. We show that such bias field defines the delayed or accelerated nucleation of domains with chiral domain walls performing the magnetization reversal.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: Ministry of Science, Information and Communications Technology (ICT) and Future Planning of Korea; National Key Research and Development Program of China; National Natural Science Foundation of China; National Research Foundation (NRF) of Korea; National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1559286

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 7 Vol. 3; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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