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Title: Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry

Abstract

We report on the observation of a field-induced magnetic bias effect in a Ga 0.94Mn 0.06As 1-yP y thin film with digitally graded phosphorus content. Although phosphorus concentration in the sample is changed in steps from y approximate to 0.03 to y approximate to 0.28, the magnetometry and magnetotransport data display a coherent magnetic response typical for single-layer in-plane magnetized films with cubic and weak [110] uniaxial anisotropy. Unexpectedly, low-temperature planar Hall resistance loops exhibit remarkable asymmetry tunable by application of strong in-plane initial magnetic field H Ini. We discuss this unusual memory effect, resembling the magnetization asymmetry in the exchange biased magnetic bilayers, in terms of a unidirectional bias field H b induced by H Ini. We show that such bias field defines the delayed or accelerated nucleation of domains with chiral domain walls performing the magnetization reversal.

Authors:
 [1];  [1];  [2];  [3];  [4];  [4];  [3];  [5];  [3];  [3]
  1. Univ. of Notre Dame, IN (United States); Argonne National Lab. (ANL), Argonne, IL (United States); Nanjing Univ. (China)
  2. Univ. of Notre Dame, IN (United States); Korea Univ., Seoul (Korea, Republic of)
  3. Univ. of Notre Dame, IN (United States)
  4. Argonne National Lab. (ANL), Argonne, IL (United States)
  5. Korea Univ., Seoul (Korea, Republic of)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); National Natural Science Foundation of China (NNSFC); National Key Research and Development Program of China; National Research Foundation of Korea (NRF); Ministry of Science, Information and Communications Technology (ICT) and Future Planning of Korea; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1559286
Alternate Identifier(s):
OSTI ID: 1546486
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 7; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Dong, Sining, Wang, Yong-Lei, Bac, Seul-Ki, Liu, Xinyu, Vlasko-Vlasov, Vitalii, Kwok, Wai-Kwong, Rouvimov, Sergei, Lee, Sanghoon, Dobrowolska, Margaret, and Furdyna, Jacek K. Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.074407.
Dong, Sining, Wang, Yong-Lei, Bac, Seul-Ki, Liu, Xinyu, Vlasko-Vlasov, Vitalii, Kwok, Wai-Kwong, Rouvimov, Sergei, Lee, Sanghoon, Dobrowolska, Margaret, & Furdyna, Jacek K. Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry. United States. doi:10.1103/PhysRevMaterials.3.074407.
Dong, Sining, Wang, Yong-Lei, Bac, Seul-Ki, Liu, Xinyu, Vlasko-Vlasov, Vitalii, Kwok, Wai-Kwong, Rouvimov, Sergei, Lee, Sanghoon, Dobrowolska, Margaret, and Furdyna, Jacek K. Fri . "Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry". United States. doi:10.1103/PhysRevMaterials.3.074407.
@article{osti_1559286,
title = {Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry},
author = {Dong, Sining and Wang, Yong-Lei and Bac, Seul-Ki and Liu, Xinyu and Vlasko-Vlasov, Vitalii and Kwok, Wai-Kwong and Rouvimov, Sergei and Lee, Sanghoon and Dobrowolska, Margaret and Furdyna, Jacek K.},
abstractNote = {We report on the observation of a field-induced magnetic bias effect in a Ga0.94Mn0.06As1-yPy thin film with digitally graded phosphorus content. Although phosphorus concentration in the sample is changed in steps from y approximate to 0.03 to y approximate to 0.28, the magnetometry and magnetotransport data display a coherent magnetic response typical for single-layer in-plane magnetized films with cubic and weak [110] uniaxial anisotropy. Unexpectedly, low-temperature planar Hall resistance loops exhibit remarkable asymmetry tunable by application of strong in-plane initial magnetic field HIni. We discuss this unusual memory effect, resembling the magnetization asymmetry in the exchange biased magnetic bilayers, in terms of a unidirectional bias field Hb induced by HIni. We show that such bias field defines the delayed or accelerated nucleation of domains with chiral domain walls performing the magnetization reversal.},
doi = {10.1103/PhysRevMaterials.3.074407},
journal = {Physical Review Materials},
number = 7,
volume = 3,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
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