Multiferroicity in atomic van der Waals heterostructures

Gong, Cheng; Kim, Eun Mi; Wang, Yuan; Lee, Geunsik; Zhang, Xiang

doi:10.1038/s41467-019-10693-0

Title: Multiferroicity in atomic van der Waals heterostructures

Journal Article · 13 June 2019 · Nature Communications

DOI: https://doi.org/10.1038/s41467-019-10693-0 · OSTI ID:1559228

Gong, Cheng ^[1]; Kim, Eun Mi ^[2]; Wang, Yuan ^[3];

^[2];

^[3]

Univ. of California, Berkeley, CA (United States)
Ulsan National Inst. of Science and Technology (Korea)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Materials that are simultaneously ferromagnetic and ferroelectric - multiferroics - promise the control of disparate ferroic orders, leading to technological advances in microwave magnetoelectric applications and next generation of spintronics. Single-phase multiferroics are challenged by the opposite d-orbital occupations imposed by the two ferroics, and heterogeneous nanocomposite multiferroics demand ingredients' structural compatibility with the resultant multiferroicity exclusively at inter-materials boundaries. Here we propose the two-dimensional heterostructure multiferroics by stacking up atomic layers of ferromagnetic Cr₂Ge₂Te₆ and ferroelectric In₂Se₃, thereby leading to all-atomic multiferroicity. Through first-principles density functional theory calculations, we find as In₂Se₃ reverses its polarization, the magnetism of Cr₂Ge₂Te₆ is switched, and correspondingly In₂Se₃ becomes a switchable magnetic semiconductor due to proximity effect. This unprecedented multiferroic duality (i.e., switchable ferromagnet and switchable magnetic semiconductor) enables both layers for logic applications. Van der Waals heterostructure multiferroics open the door for exploring the low-dimensional magnetoelectric physics and spintronic applications based on artificial superlattices.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1559228

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 10; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Van der Waals magnets: Wonder building blocks for two‐dimensional spintronics? Zhang, Wen; Wong, Ping Kwan Johnny; Zhu, Rui InfoMat, Vol. 1, Issue 4 https://doi.org/10.1002/inf2.12048	journal	October 2019
Interfacial coupling induced critical thickness for the ferroelectric bistability of two-dimensional ferromagnet/ferroelectric van der Waals heterostructures Huang, Xiaokun; Li, Guannan; Chen, Chao Physical Review B, Vol. 100, Issue 23 https://doi.org/10.1103/physrevb.100.235445	journal	December 2019
Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n‐ and p‐Type Ohmic Contacts to Metals with a Wide Range of Work Functions Shao, Yangfan; Wang, Qian; Pan, Hui Advanced Electronic Materials, Vol. 6, Issue 3 https://doi.org/10.1002/aelm.201900981	journal	December 2019

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