Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

doi:10.1063/1.5111600

This content will become publicly available on August 26, 2020

Title: Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

Authors:

^[1];

^[2];

^[3];

^[1]; Walukiewicz, W. ^[4]

Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
Department of Electrical and Electronic Engineering, Saga University, 1 Honjo, Saga 840-8502, Japan
Department of Physics, City University of Hong Kong, Kowloon, Hong Kong, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Publication Date:: 2019-08-28

Sponsoring Org.:: USDOE

OSTI Identifier:: 1558742

Grant/Contract Number:: AC02-05CH11231; 18K19046; 19H02661

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 8; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Welna, M., Janicki, Ł., Linhart, W. M., Tanaka, T., Yu, K. M., Kudrawiec, R., and Walukiewicz, W. Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys.  United States: N. p., 2019. 
        Web.  doi:10.1063/1.5111600.

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                    Welna, M., Janicki, Ł., Linhart, W. M., Tanaka, T., Yu, K. M., Kudrawiec, R., & Walukiewicz, W. Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys.  United States.  doi:10.1063/1.5111600.

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                    Welna, M., Janicki, Ł., Linhart, W. M., Tanaka, T., Yu, K. M., Kudrawiec, R., and Walukiewicz, W. Wed .  
        "Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys".  United States.  doi:10.1063/1.5111600.

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@article{osti_1558742,

  title        = {Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys},

  author       = {Welna, M. and Janicki, Ł. and Linhart, W. M. and Tanaka, T. and Yu, K. M. and Kudrawiec, R. and Walukiewicz, W.},

  abstractNote = {},

  doi          = {10.1063/1.5111600},

  journal      = {Journal of Applied Physics},

  number       = 8,

  volume       = 126,

  place        = {United States},

  year         = {2019},

  month        = {8}

}

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DOI: 10.1063/1.5111600

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This content will become publicly available on August 26, 2020

Title: Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

Citation Formats

Band Anticrossing in GaInNAs Alloys journal, February 1999

Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x journal, April 2000

Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels journal, June 1997

Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe 1−x O x alloys journal, January 2012

Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN∕GaAs single quantum wells journal, July 2006

Band anticrossing in InGaPN alloys induced by N-related localized states journal, November 2006

Intermediate band solar cells: Recent progress and future directions journal, June 2015

The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys journal, February 2016

Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour deposition journal, January 1988

Isoelectronic Donors and Acceptors journal, August 1966

Third-derivative modulation spectroscopy with low-field electroreflectance journal, June 1973

Growth and characterization of Zn1-Cd Te1-O highly mismatched alloys for intermediate band solar cells journal, September 2017

Understanding intermediate-band solar cells journal, February 2012

Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O journal, March 2006

"Mirror" Absorption and Fluorescence in ZnTe journal, May 1962

Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization journal, June 2005

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps journal, December 2003

Intermediate-band photovoltaic solar cell based on ZnTe:O journal, July 2009

Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides journal, July 2015

Interaction of Localized Electronic States with the Conduction Band: Band Anticrossing in II-VI Semiconductor Ternaries journal, August 2000

Photoluminescence due to isoelectric oxygen and tellurium traps in II–VI alloys journal, April 1970

Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy journal, October 2008

Generation and recombination rates at ZnTe:O intermediate band states journal, December 2009

Temperature dependence and bowing of the bandgap in ZnSe1−xOx journal, April 2004

Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells journal, September 2013

Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs journal, July 2019

Photoluminescence properties of ZnTeO and ZnSeO alloys with dilute O concentrations journal, March 2006

Temperature dependence of the band gap of ZnSe1−xOx journal, October 2009

Optical properties of CdxZn1−xTe epilayers grown by molecular-beam epitaxy journal, September 2003

Analysis of band anticrossing in Ga N x P 1 − x alloys journal, August 2004

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Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations journal, September 2009

Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells journal, February 2013

Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs journal, November 2000

Temperature-dependent parameters of band anticrossing in InGaPN alloys journal, July 2008

Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance journal, January 2009

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Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
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Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
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Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe _1−x O _x alloys
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Band anticrossing in InGaPN alloys induced by N-related localized states
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Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour deposition
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Isoelectronic Donors and Acceptors
journal, August 1966

Third-derivative modulation spectroscopy with low-field electroreflectance
journal, June 1973

Growth and characterization of Zn1-Cd Te1-O highly mismatched alloys for intermediate band solar cells
journal, September 2017

Understanding intermediate-band solar cells
journal, February 2012

Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O
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"Mirror" Absorption and Fluorescence in ZnTe
journal, May 1962

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journal, December 2003

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