Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

Welna, M.; Janicki, Ł.; Linhart, W. M.; Tanaka, T.; Yu, K. M.; Kudrawiec, R.; Walukiewicz, W.

doi:10.1063/1.5111600

Title: Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

Abstract

Interband optical transitions in highly mismatched ZnTe1−xOx and Zn1−yCdyTe1−xOx alloys with Cd content y = 0.1 and 0.32 and oxygen content x < 0.016 grown on ZnTe substrates were studied by photoreflectance (PR) and photoluminescence (PL) in a broad temperature range. The incorporation of oxygen into a Zn(Cd)Te matrix results in a splitting of the conduction band (CB) into two E− and E+ subbands forming a semiconductor with an intermediate band. In ZnTeO, only the E− band could be probed by PR and there was no PL signal. An addition of Cd atoms to form a ZnCdTeO quaternary alloy significantly improves the optical quality as evidenced by an emergence of an E+ related transition in the PR spectra and the appearance of a PL emission related to the E− band visible up to 260 K. Moreover, for Cd content above 25%, a change in the E− band character is observed from localized O-like to CB-like. The analysis of a PR signal shows a strong reduction of the temperature dependence of the energy gap of Zn(Cd)TeO alloys compared to ZnTe. The temperature related reduction of the bandgap shift with increasing O content is well explained by the band anticrossing interaction between the temperature dependent conduction bandmore »« less

Authors:

;

; Walukiewicz, W.

Publication Date:: Mon Aug 26 00:00:00 EDT 2019

Sponsoring Org.:: USDOE

OSTI Identifier:: 1558742

Grant/Contract Number:: AC02-05CH11231; 18K19046; 19H02661

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 8; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Welna, M., Janicki, Ł., Linhart, W. M., Tanaka, T., Yu, K. M., Kudrawiec, R., and Walukiewicz, W. Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5111600.

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                    Welna, M., Janicki, Ł., Linhart, W. M., Tanaka, T., Yu, K. M., Kudrawiec, R., & Walukiewicz, W. Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys.  United States.  https://doi.org/10.1063/1.5111600

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                    Welna, M., Janicki, Ł., Linhart, W. M., Tanaka, T., Yu, K. M., Kudrawiec, R., and Walukiewicz, W. Mon .  
"Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys".  United States.  https://doi.org/10.1063/1.5111600.

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@article{osti_1558742,

  title        = {Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys},

  author       = {Welna, M. and Janicki, Ł. and Linhart, W. M. and Tanaka, T. and Yu, K. M. and Kudrawiec, R. and Walukiewicz, W.},

  abstractNote = {Interband optical transitions in highly mismatched ZnTe1−xOx and Zn1−yCdyTe1−xOx alloys with Cd content y = 0.1 and 0.32 and oxygen content x < 0.016 grown on ZnTe substrates were studied by photoreflectance (PR) and photoluminescence (PL) in a broad temperature range. The incorporation of oxygen into a Zn(Cd)Te matrix results in a splitting of the conduction band (CB) into two E− and E+ subbands forming a semiconductor with an intermediate band. In ZnTeO, only the E− band could be probed by PR and there was no PL signal. An addition of Cd atoms to form a ZnCdTeO quaternary alloy significantly improves the optical quality as evidenced by an emergence of an E+ related transition in the PR spectra and the appearance of a PL emission related to the E− band visible up to 260 K. Moreover, for Cd content above 25%, a change in the E− band character is observed from localized O-like to CB-like. The analysis of a PR signal shows a strong reduction of the temperature dependence of the energy gap of Zn(Cd)TeO alloys compared to ZnTe. The temperature related reduction of the bandgap shift with increasing O content is well explained by the band anticrossing interaction between the temperature dependent conduction band of the host Zn(Cd)Te matrix and the temperature independent energy of highly localized O states.},

  doi          = {10.1063/1.5111600},

  journal      = {Journal of Applied Physics},

  number       = 8,

  volume       = 126,

  place        = {United States},

  year         = {Mon Aug 26 00:00:00 EDT 2019},

  month        = {Mon Aug 26 00:00:00 EDT 2019}

}

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Works referenced in this record:

Band Anticrossing in GaInNAs Alloys
journal, February 1999

Shan, W.; Walukiewicz, W.; Ager, J. W.
Physical Review Letters, Vol. 82, Issue 6
DOI: 10.1103/PhysRevLett.82.1221

Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
journal, April 2000

Skierbiszewski, C.; Perlin, P.; Wisniewski, P.
Applied Physics Letters, Vol. 76, Issue 17
DOI: 10.1063/1.126360

Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
journal, June 1997

Luque, Antonio; Martí, Antonio
Physical Review Letters, Vol. 78, Issue 26
DOI: 10.1103/PhysRevLett.78.5014

Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe _1−x O _x alloys
journal, January 2012

Tanaka, Tooru; Kusaba, Shuhei; Mochinaga, Tomohiro
Applied Physics Letters, Vol. 100, Issue 1
DOI: 10.1063/1.3674310

Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN∕GaAs single quantum wells
journal, July 2006

Lai, Fang-I; Kuo, S. Y.; Wang, J. S.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, Issue 4
DOI: 10.1116/1.2208996

Band anticrossing in InGaPN alloys induced by N-related localized states
journal, November 2006

Lin, K. I.; Hwang, J. S.
Applied Physics Letters, Vol. 89, Issue 19
DOI: 10.1063/1.2387972

Intermediate band solar cells: Recent progress and future directions
journal, June 2015

Okada, Y.; Ekins-Daukes, N. J.; Kita, T.
Applied Physics Reviews, Vol. 2, Issue 2
DOI: 10.1063/1.4916561

The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys
journal, February 2016

Latkowska, M.; Baranowski, M.; Linhart, W. M.
Journal of Physics D: Applied Physics, Vol. 49, Issue 11
DOI: 10.1088/0022-3727/49/11/115105

Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour deposition
journal, January 1988

Ekawa, Mitsuru; Kawakami, Yoichi; Taguchi, Tsunemasa
Journal of Crystal Growth, Vol. 93, Issue 1-4
DOI: 10.1016/0022-0248(88)90601-X

Isoelectronic Donors and Acceptors
journal, August 1966

Hopfield, J. J.; Thomas, D. G.; Lynch, R. T.
Physical Review Letters, Vol. 17, Issue 6
DOI: 10.1103/PhysRevLett.17.312

Third-derivative modulation spectroscopy with low-field electroreflectance
journal, June 1973

Aspnes, D. E.
Surface Science, Vol. 37
DOI: 10.1016/0039-6028(73)90337-3

Growth and characterization of Zn1-Cd Te1-O highly mismatched alloys for intermediate band solar cells
journal, September 2017

Tanaka, Tooru; Terasawa, Toshiki; Okano, Yuuki
Solar Energy Materials and Solar Cells, Vol. 169
DOI: 10.1016/j.solmat.2017.05.002

Understanding intermediate-band solar cells
journal, February 2012

Luque, Antonio; Martí, Antonio; Stanley, Colin
Nature Photonics, Vol. 6, Issue 3
DOI: 10.1038/nphoton.2012.1

Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O
journal, March 2006

Felici, Marco; Polimeni, Antonio; Capizzi, Mario
Applied Physics Letters, Vol. 88, Issue 10
DOI: 10.1063/1.2183809

"Mirror" Absorption and Fluorescence in ZnTe
journal, May 1962

Dietz, R. E.; Thomas, D. G.; Hopfield, J. J.
Physical Review Letters, Vol. 8, Issue 10
DOI: 10.1103/PhysRevLett.8.391

Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization
journal, June 2005

Zhao, Q. X.; Wang, S. M.; Wei, Y. Q.
Physics Letters A, Vol. 341, Issue 1-4
DOI: 10.1016/j.physleta.2005.04.089

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps
journal, December 2003

Yu, K. M.; Walukiewicz, W.; Wu, J.
Physical Review Letters, Vol. 91, Issue 24
DOI: 10.1103/PhysRevLett.91.246403

Intermediate-band photovoltaic solar cell based on ZnTe:O
journal, July 2009

Wang, Weiming; Lin, Albert S.; Phillips, Jamie D.
Applied Physics Letters, Vol. 95, Issue 1
DOI: 10.1063/1.3166863

Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides
journal, July 2015

Wełna, M.; Kudrawiec, R.; Nabetani, Y.
Semiconductor Science and Technology, Vol. 30, Issue 8
DOI: 10.1088/0268-1242/30/8/085018

Interaction of Localized Electronic States with the Conduction Band: Band Anticrossing in II-VI Semiconductor Ternaries
journal, August 2000

Walukiewicz, W.; Shan, W.; Yu, K. M.
Physical Review Letters, Vol. 85, Issue 7
DOI: 10.1103/PhysRevLett.85.1552

Photoluminescence due to isoelectric oxygen and tellurium traps in II–VI alloys
journal, April 1970

Iseler, G. W.; Strauss, A. J.
Journal of Luminescence, Vol. 3, Issue 1
DOI: 10.1016/0022-2313(70)90002-5

Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy
journal, October 2008

Wang, W.; Bowen, W.; Spanninga, S.
Journal of Electronic Materials, Vol. 38, Issue 1
DOI: 10.1007/s11664-008-0577-2

Generation and recombination rates at ZnTe:O intermediate band states
journal, December 2009

Lin, Albert S.; Phillips, Jamie D.; Metzger, Wyatt K.
Applied Physics Letters, Vol. 95, Issue 26
DOI: 10.1063/1.3274131

Temperature dependence and bowing of the bandgap in ZnSe1−xOx
journal, April 2004

Polimeni, A.; Capizzi, M.; Nabetani, Y.
Applied Physics Letters, Vol. 84, Issue 17
DOI: 10.1063/1.1719274

Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells
journal, September 2013

Tanaka, Tooru; Nagao, Yasuhiro; Mochinaga, Tomohiro
Journal of Crystal Growth, Vol. 378
DOI: 10.1016/j.jcrysgro.2012.12.086

Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs
journal, July 2019

Wełna, M.; Żelazna, K.; Létoublon, A.
Solar Energy Materials and Solar Cells, Vol. 196
DOI: 10.1016/j.solmat.2019.03.039

Photoluminescence properties of ZnTeO and ZnSeO alloys with dilute O concentrations
journal, March 2006

Nabetani, Y.; Okuno, T.; Aoki, K.
physica status solidi (c), Vol. 3, Issue 4
DOI: 10.1002/pssc.200564697

Temperature dependence of the band gap of ZnSe1−xOx
journal, October 2009

Broesler, R.; Haller, E. E.; Walukiewicz, W.
Applied Physics Letters, Vol. 95, Issue 15
DOI: 10.1063/1.3242026

Optical properties of CdxZn1−xTe epilayers grown by molecular-beam epitaxy
journal, September 2003

Shih, Y. T.; Fan, W. C.; Yang, C. S.
Journal of Applied Physics, Vol. 94, Issue 6
DOI: 10.1063/1.1601685

Analysis of band anticrossing in $Ga N_{x} P_{1 - x}$ alloys
journal, August 2004

Buyanova, I. A.; Izadifard, M.; Kasic, A.
Physical Review B, Vol. 70, Issue 8
DOI: 10.1103/PhysRevB.70.085209

Compositional dependence of optical transition energies in highly mismatched Zn ₁₋ _x Cd _x Te ₁₋ _y O _y alloys
journal, January 2016

Tanaka, Tooru; Mizoguchi, Kosuke; Terasawa, Toshiki
Applied Physics Express, Vol. 9, Issue 2
DOI: 10.7567/APEX.9.021202

Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations
journal, September 2009

Kudrawiec, R.; Misiewicz, J.
Review of Scientific Instruments, Vol. 80, Issue 9
DOI: 10.1063/1.3213613

Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells
journal, February 2013

Tanaka, Tooru; Miyabara, Masaki; Nagao, Yasuhiro
Applied Physics Letters, Vol. 102, Issue 5
DOI: 10.1063/1.4790643

Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs
journal, November 2000

Suemune, I.; Uesugi, K.; Walukiewicz, W.
Applied Physics Letters, Vol. 77, Issue 19
DOI: 10.1063/1.1322633

Temperature-dependent parameters of band anticrossing in InGaPN alloys
journal, July 2008

Lin, K. I.; Wang, T. S.; Tsai, J. T.
Journal of Applied Physics, Vol. 104, Issue 1
DOI: 10.1063/1.2952514

Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance
journal, January 2009

Kudrawiec, Robert; Sęk, Grzegorz; Misiewicz, Jan
Applied Physics Letters, Vol. 94, Issue 1
DOI: 10.1063/1.3055605

Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity
journal, August 2007

Merrick, M.; Cripps, S. A.; Murdin, B. N.
Physical Review B, Vol. 76, Issue 7
DOI: 10.1103/PhysRevB.76.075209

Effects of band anticrossing on the temperature dependence of the band gap of ZnSe _1−x O _x alloys
journal, December 2016

Wełna, M.; Baranowski, M.; Kudrawiec, R.
Semiconductor Science and Technology, Vol. 32, Issue 1
DOI: 10.1088/1361-6641/32/1/015005

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Title: Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

Abstract

Citation Formats

Band Anticrossing in GaInNAs Alloys journal, February 1999

Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x journal, April 2000

Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels journal, June 1997

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Band anticrossing in InGaPN alloys induced by N-related localized states journal, November 2006

Intermediate band solar cells: Recent progress and future directions journal, June 2015

The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys journal, February 2016

Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour deposition journal, January 1988

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Third-derivative modulation spectroscopy with low-field electroreflectance journal, June 1973

Growth and characterization of Zn1-Cd Te1-O highly mismatched alloys for intermediate band solar cells journal, September 2017

Understanding intermediate-band solar cells journal, February 2012

Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O journal, March 2006

"Mirror" Absorption and Fluorescence in ZnTe journal, May 1962

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Diluted II-VI Oxide Semiconductors with Multiple Band Gaps journal, December 2003

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Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy journal, October 2008

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Effects of band anticrossing on the temperature dependence of the band gap of ZnSe 1−x O x alloys journal, December 2016

Band Anticrossing in GaInNAs Alloys
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Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
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Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
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Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe _1−x O _x alloys
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journal, August 1966

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journal, June 1973

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journal, September 2017

Understanding intermediate-band solar cells
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Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O
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Photoluminescence due to isoelectric oxygen and tellurium traps in II–VI alloys
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Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy
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