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Title: Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [1];  [1];  [3];  [4];  [5];  [6]
+ Show Author Affiliations
  1. LTCI, Télécom Paris, Institut Polytechnique de Paris, 46 rue Barrault, Paris 75013, France
  2. Institute for Energy Efficiency, University of California Santa Barbara, 2314 Phelps Hall, Santa Barbara, California 93106, USA
  3. Institute for Energy Efficiency, University of California Santa Barbara, 2314 Phelps Hall, Santa Barbara, California 93106, USA, Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
  4. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
  5. Institute for Energy Efficiency, University of California Santa Barbara, 2314 Phelps Hall, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA, Materials Department, Engineering II Building, 1355, University of California Santa Barbara, Santa Barbara, California 93106, USA
  6. LTCI, Télécom Paris, Institut Polytechnique de Paris, 46 rue Barrault, Paris 75013, France, Center for High Technology Materials, University of New-Mexico, 1313 Goddard St SE, Albuquerque, New Mexico 87106, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1558728
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Dong, B., Duan, J., Shang, C., Huang, H., Sawadogo, A. B., Jung, D., Wan, Y., Bowers, J. E., and Grillot, F. Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers. United States: N. p., 2019. Web. doi:10.1063/1.5110768.
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Dong, B., Duan, J., Shang, C., Huang, H., Sawadogo, A. B., Jung, D., Wan, Y., Bowers, J. E., & Grillot, F. Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers. United States. doi:10.1063/1.5110768.
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Dong, B., Duan, J., Shang, C., Huang, H., Sawadogo, A. B., Jung, D., Wan, Y., Bowers, J. E., and Grillot, F. Mon . "Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers". United States. doi:10.1063/1.5110768.
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@article{osti_1558728,
title = {Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers},
author = {Dong, B. and Duan, J. and Shang, C. and Huang, H. and Sawadogo, A. B. and Jung, D. and Wan, Y. and Bowers, J. E. and Grillot, F.},
abstractNote = {},
doi = {10.1063/1.5110768},
journal = {Applied Physics Letters},
number = 9,
volume = 115,
place = {United States},
year = {2019},
month = {8}
}
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This content will become publicly available on August 26, 2020
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DOI:  10.1063/1.5110768
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