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Title: Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [1];  [1];  [3];  [4];  [5];  [6]
  1. LTCI, Télécom Paris, Institut Polytechnique de Paris, 46 rue Barrault, Paris 75013, France
  2. Institute for Energy Efficiency, University of California Santa Barbara, 2314 Phelps Hall, Santa Barbara, California 93106, USA
  3. Institute for Energy Efficiency, University of California Santa Barbara, 2314 Phelps Hall, Santa Barbara, California 93106, USA, Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
  4. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
  5. Institute for Energy Efficiency, University of California Santa Barbara, 2314 Phelps Hall, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA, Materials Department, Engineering II Building, 1355, University of California Santa Barbara, Santa Barbara, California 93106, USA
  6. LTCI, Télécom Paris, Institut Polytechnique de Paris, 46 rue Barrault, Paris 75013, France, Center for High Technology Materials, University of New-Mexico, 1313 Goddard St SE, Albuquerque, New Mexico 87106, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1558728
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Dong, B., Duan, J., Shang, C., Huang, H., Sawadogo, A. B., Jung, D., Wan, Y., Bowers, J. E., and Grillot, F. Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers. United States: N. p., 2019. Web. doi:10.1063/1.5110768.
Dong, B., Duan, J., Shang, C., Huang, H., Sawadogo, A. B., Jung, D., Wan, Y., Bowers, J. E., & Grillot, F. Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers. United States. doi:10.1063/1.5110768.
Dong, B., Duan, J., Shang, C., Huang, H., Sawadogo, A. B., Jung, D., Wan, Y., Bowers, J. E., and Grillot, F. Mon . "Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers". United States. doi:10.1063/1.5110768.
@article{osti_1558728,
title = {Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers},
author = {Dong, B. and Duan, J. and Shang, C. and Huang, H. and Sawadogo, A. B. and Jung, D. and Wan, Y. and Bowers, J. E. and Grillot, F.},
abstractNote = {},
doi = {10.1063/1.5110768},
journal = {Applied Physics Letters},
number = 9,
volume = 115,
place = {United States},
year = {2019},
month = {8}
}

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This content will become publicly available on August 26, 2020
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Works referenced in this record:

Room-temperature operation of InAs quantum-dash lasers on InP [001]
journal, August 2001

  • Wang, R. H.; Stintz, A.; Varangis, P. M.
  • IEEE Photonics Technology Letters, Vol. 13, Issue 8
  • DOI: 10.1109/68.935797

Quantum Dash Mode-Locked Lasers for Data Centre Applications
journal, November 2015

  • Vujicic, Vidak; Calo, Cosimo; Watts, Regan
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 21, Issue 6
  • DOI: 10.1109/JSTQE.2015.2487884

Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor
journal, June 2018

  • Duan, J.; Huang, H.; Jung, D.
  • Applied Physics Letters, Vol. 112, Issue 25
  • DOI: 10.1063/1.5025879

Linewidth broadening factor in semiconductor lasers--An overview
journal, January 1987


Orientation dependence of the optical properties in InAs quantum-dash lasers on InP
journal, August 2002

  • Ukhanov, A. A.; Wang, R. H.; Rotter, T. J.
  • Applied Physics Letters, Vol. 81, Issue 6
  • DOI: 10.1063/1.1498875

Effects of modulation p doping in InAs quantum dot lasers on silicon
journal, August 2018

  • Zhang, Zeyu; Jung, Daehwan; Norman, Justin C.
  • Applied Physics Letters, Vol. 113, Issue 6
  • DOI: 10.1063/1.5040792

Modeling the Injection-Locked Behavior of a Quantum Dash Semiconductor Laser
journal, January 2009

  • Naderi, N. A.; Pochet, M.; Grillot, F.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, Issue 3
  • DOI: 10.1109/JSTQE.2009.2015334

Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 $\mu$m
journal, January 2009

  • Azouigui, S.; Dagens, B.; Lelarge, F.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, Issue 3
  • DOI: 10.1109/JSTQE.2009.2013870

Comparison of dynamic properties of InP/InAs quantum-dot and quantum-dash lasers
journal, October 2016

  • Sadeev, T.; Arsenijević, D.; Bimberg, D.
  • Applied Physics Letters, Vol. 109, Issue 16
  • DOI: 10.1063/1.4965846

A Review of High-Performance Quantum Dot Lasers on Silicon
journal, April 2019

  • Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu
  • IEEE Journal of Quantum Electronics, Vol. 55, Issue 2
  • DOI: 10.1109/JQE.2019.2901508

Orientation dependent emission properties of columnar quantum dash laser structures
journal, June 2009

  • Hein, S.; Podemski, P.; Sęk, G.
  • Applied Physics Letters, Vol. 94, Issue 24
  • DOI: 10.1063/1.3156029

High-Performance Photonic Integrated Circuits on Silicon
journal, September 2019

  • Helkey, Roger; Saleh, Adel A. M.; Buckwalter, Jim
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 25, Issue 5
  • DOI: 10.1109/JSTQE.2019.2903775

1.3- $\mu$ ]]>m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon
journal, March 2019

  • Duan, Jianan; Huang, Heming; Dong, Bozhang
  • IEEE Photonics Technology Letters, Vol. 31, Issue 5
  • DOI: 10.1109/LPT.2019.2895049

Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon
journal, January 2018

  • Huang, Heming; Duan, Jianan; Jung, Daehwan
  • Journal of the Optical Society of America B, Vol. 35, Issue 11
  • DOI: 10.1364/JOSAB.35.002780

Fundamentals of Coherent Optical Fiber Communications
journal, January 2016


Widely tunable narrow-linewidth 1.5 μ m light source based on a monolithically integrated quantum dot laser array
journal, May 2017

  • Becker, A.; Sichkovskyi, V.; Bjelica, M.
  • Applied Physics Letters, Vol. 110, Issue 18
  • DOI: 10.1063/1.4982716

Determination of active-region leakage currents in ridge-waveguide strained-layer quantum-well lasers by varying the ridge width
journal, March 1998

  • Letal, G. J.; Simmons, J. G.; Evans, J. D.
  • IEEE Journal of Quantum Electronics, Vol. 34, Issue 3
  • DOI: 10.1109/3.661460

Ultra-Short Pulse Generation in a Three Section Tapered Passively Mode-Locked Quantum-Dot Semiconductor Laser
journal, February 2019