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Title: Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers

Abstract

This work investigates the effect of the polarization anisotropy on the linewidth enhancement factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth enhancement factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.

Authors:
ORCiD logo; ORCiD logo; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1558728
Grant/Contract Number:  
Fresco DE-AR0001042
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Dong, B., Duan, J., Shang, C., Huang, H., Sawadogo, A. B., Jung, D., Wan, Y., Bowers, J. E., and Grillot, F. Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers. United States: N. p., 2019. Web. doi:10.1063/1.5110768.
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Dong, B., Duan, J., Shang, C., Huang, H., Sawadogo, A. B., Jung, D., Wan, Y., Bowers, J. E., & Grillot, F. Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers. United States. https://doi.org/10.1063/1.5110768
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Dong, B., Duan, J., Shang, C., Huang, H., Sawadogo, A. B., Jung, D., Wan, Y., Bowers, J. E., and Grillot, F. Mon . "Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers". United States. https://doi.org/10.1063/1.5110768.
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@article{osti_1558728,
title = {Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers},
author = {Dong, B. and Duan, J. and Shang, C. and Huang, H. and Sawadogo, A. B. and Jung, D. and Wan, Y. and Bowers, J. E. and Grillot, F.},
abstractNote = {This work investigates the effect of the polarization anisotropy on the linewidth enhancement factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth enhancement factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.},
doi = {10.1063/1.5110768},
journal = {Applied Physics Letters},
number = 9,
volume = 115,
place = {United States},
year = {Mon Aug 26 00:00:00 EDT 2019},
month = {Mon Aug 26 00:00:00 EDT 2019}
}
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https://doi.org/10.1063/1.5110768
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Works referenced in this record:

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Ultra-Short Pulse Generation in a Three Section Tapered Passively Mode-Locked Quantum-Dot Semiconductor Laser
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