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Title: Short-Circuit Characterization and Protection of 10-kV SiC mosfet

Abstract

This paper presents the characterization of the temperature-dependent short-circuit performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting of a phase-leg configuration and a fast speed 10-kV solid state circuit breaker, with temperature control, is introduced in detail. A novel FPGA-based short-circuit protection circuit having a response time of 1.5 μs is proposed and integrated into the gate driver. The short-circuit protection is validated through the platform. The short-circuit characteristics for both the hard switching fault and fault under load (FUL) types at various dc-link voltages (from 500 V to 6 kV) are tested and discussed. The saturation current increases with dc-link voltage and achieves 360 A at 6 kV. Different from low voltage SiC devices, there is no current spike in FUL type of fault. The temperature-dependent short-circuit performance is also presented from 25 to 125 °C. The difference of short-circuit waveforms at various initial junction temperatures can be neglected. Here, a thermal model of the 10-kV SiC mosfet is built for the junction temperature estimation during the short circuit and for analysis of the initial junction temperature impact on the short-circuit performance.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1]; ORCiD logo [1];  [3];  [1]; ORCiD logo [1]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Durham, NC (United States)
  3. U. S. Energy, Washington, D.C. (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1558471
Grant/Contract Number:  
[AC05-00OR22725]
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Power Electronics
Additional Journal Information:
[ Journal Volume: 34; Journal Issue: 2]; Journal ID: ISSN 0885-8993
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; junction temperature; 10-kV SiC mosfet; protection; short circuit

Citation Formats

Ji, Shiqi, Laitinen, Marko, Huang, Xingxuan, Sun, Jingjing, Giewont, William, Wang, Fei, and Tolbert, Leon M. Short-Circuit Characterization and Protection of 10-kV SiC mosfet. United States: N. p., 2018. Web. doi:10.1109/TPEL.2018.2834463.
Ji, Shiqi, Laitinen, Marko, Huang, Xingxuan, Sun, Jingjing, Giewont, William, Wang, Fei, & Tolbert, Leon M. Short-Circuit Characterization and Protection of 10-kV SiC mosfet. United States. doi:10.1109/TPEL.2018.2834463.
Ji, Shiqi, Laitinen, Marko, Huang, Xingxuan, Sun, Jingjing, Giewont, William, Wang, Fei, and Tolbert, Leon M. Tue . "Short-Circuit Characterization and Protection of 10-kV SiC mosfet". United States. doi:10.1109/TPEL.2018.2834463. https://www.osti.gov/servlets/purl/1558471.
@article{osti_1558471,
title = {Short-Circuit Characterization and Protection of 10-kV SiC mosfet},
author = {Ji, Shiqi and Laitinen, Marko and Huang, Xingxuan and Sun, Jingjing and Giewont, William and Wang, Fei and Tolbert, Leon M.},
abstractNote = {This paper presents the characterization of the temperature-dependent short-circuit performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting of a phase-leg configuration and a fast speed 10-kV solid state circuit breaker, with temperature control, is introduced in detail. A novel FPGA-based short-circuit protection circuit having a response time of 1.5 μs is proposed and integrated into the gate driver. The short-circuit protection is validated through the platform. The short-circuit characteristics for both the hard switching fault and fault under load (FUL) types at various dc-link voltages (from 500 V to 6 kV) are tested and discussed. The saturation current increases with dc-link voltage and achieves 360 A at 6 kV. Different from low voltage SiC devices, there is no current spike in FUL type of fault. The temperature-dependent short-circuit performance is also presented from 25 to 125 °C. The difference of short-circuit waveforms at various initial junction temperatures can be neglected. Here, a thermal model of the 10-kV SiC mosfet is built for the junction temperature estimation during the short circuit and for analysis of the initial junction temperature impact on the short-circuit performance.},
doi = {10.1109/TPEL.2018.2834463},
journal = {IEEE Transactions on Power Electronics},
number = [2],
volume = [34],
place = {United States},
year = {2018},
month = {5}
}

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