Ferroelectrics: Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing (Adv. Electron. Mater. 4/2019)

Journal Article · 08 April 2019 · Advanced Electronic Materials

DOI: https://doi.org/10.1002/aelm.201970017 · OSTI ID:1558241

Cheng, Shaobo  ^[1]; Meng, Qingping ^[2]; Han, Myung‐Geun ^[2]; Deng, Shiqing ^[3]; Li, Xing ^[4]; Zhang, Qinghua ^[5]; Tan, Guotai ^[6]; Botton, Gianluigi A. ^[7]; Zhu, Yimei ^[2]

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1. Brookhaven National Lab. (BNL), Upton, NY (United States); McMaster Univ., Hamilton, ON (Canada)
2. Brookhaven National Lab. (BNL), Upton, NY (United States)
3. Tsinghua Univ., Beijing (China)
4. Zhengzhou Univ. (China)
5. Chinese Academy of Sciences (CAS), Beijing (China)
6. Beijing Normal Univ. (China)
7. McMaster Univ., Hamilton, ON (Canada)

In article number 1800827, Shaobo Cheng, Yimei Zhu and the co-workers observe a novel ferroelectric switching dynamic behavior in the single-phase multiferroic material YMnO₃. In situ observations and corresponding numerical calculations reveal that defect chemistry plays an important role in domain switching and can be utilized as an additional parameter for controlling the electricfield distribution within multiferroic materials.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States)
• Sponsoring Organization: National Natural Science Foundation of China; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
• Grant/Contract Number: SC0012704
• OSTI ID: 1558241
• Report Number(s): BNL-211987-2019-JAAM
• Journal Information: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 4 Vol. 5; ISSN 2199-160X
• Publisher: WileyCopyright Statement
• Country of Publication: United States
• Language: English