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Title: Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2];  [2];  [1]
  1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  2. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1558133
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Clinton, Evan A., Engel, Zachary, Vadiee, Ehsan, Carpenter, Joe V., Holman, Zachary C., and Doolittle, W. Alan. Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance. United States: N. p., 2019. Web. doi:10.1063/1.5113503.
Clinton, Evan A., Engel, Zachary, Vadiee, Ehsan, Carpenter, Joe V., Holman, Zachary C., & Doolittle, W. Alan. Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance. United States. doi:10.1063/1.5113503.
Clinton, Evan A., Engel, Zachary, Vadiee, Ehsan, Carpenter, Joe V., Holman, Zachary C., and Doolittle, W. Alan. Mon . "Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance". United States. doi:10.1063/1.5113503.
@article{osti_1558133,
title = {Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance},
author = {Clinton, Evan A. and Engel, Zachary and Vadiee, Ehsan and Carpenter, Joe V. and Holman, Zachary C. and Doolittle, W. Alan},
abstractNote = {},
doi = {10.1063/1.5113503},
journal = {Applied Physics Letters},
number = 8,
volume = 115,
place = {United States},
year = {2019},
month = {8}
}

Journal Article:
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