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Title: Topological crystalline insulator nanomembrane with strain-tunable band gap

Abstract

The ability to fine-tune band gap and band inversion in topological materials is highly enticing for the development of novel functional devices. In this work we propose that the electronic properties of free-standing nanomembranes of the topological crystalline insulators (TCI) SnTe and Pb1–x Sn x (Se,Te) are highly tunable by engineering elastic strain and membrane thickness, resulting in tunable band gap and giant piezoconductivity. Membrane thickness governs the hybridization of topological electronic states on opposite surfaces, while elastic strain can further modulate the hybridization strength by controlling the penetration length of surface states. We introduce a frequency-resolved infrared photodetector using force-concentration induced inhomogeneous elastic strain in TCI nanomembranes with spatially varying width. The predicted tunable band gap accompanied by strong spin-textured electronic states will open new avenues for fabricating piezoresistive devices, infrared detectors and energy-efficient electronic and spintronic devices based on TCI nanomembrane.

Authors:
 [1];  [1];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1557825
Grant/Contract Number:  
SC0010526
Resource Type:
Accepted Manuscript
Journal Name:
Nano Research
Additional Journal Information:
Journal Volume: 8; Journal Issue: 3; Journal ID: ISSN 1998-0124
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; elastic strain engineering; pseudoheterostructure; infrared photodetector; metal-insulator transition; DFT calculations

Citation Formats

Qian, Xiaofeng, Fu, Liang, and Li, Ju. Topological crystalline insulator nanomembrane with strain-tunable band gap. United States: N. p., 2014. Web. doi:10.1007/s12274-014-0578-9.
Qian, Xiaofeng, Fu, Liang, & Li, Ju. Topological crystalline insulator nanomembrane with strain-tunable band gap. United States. doi:10.1007/s12274-014-0578-9.
Qian, Xiaofeng, Fu, Liang, and Li, Ju. Fri . "Topological crystalline insulator nanomembrane with strain-tunable band gap". United States. doi:10.1007/s12274-014-0578-9. https://www.osti.gov/servlets/purl/1557825.
@article{osti_1557825,
title = {Topological crystalline insulator nanomembrane with strain-tunable band gap},
author = {Qian, Xiaofeng and Fu, Liang and Li, Ju},
abstractNote = {The ability to fine-tune band gap and band inversion in topological materials is highly enticing for the development of novel functional devices. In this work we propose that the electronic properties of free-standing nanomembranes of the topological crystalline insulators (TCI) SnTe and Pb1–x Sn x (Se,Te) are highly tunable by engineering elastic strain and membrane thickness, resulting in tunable band gap and giant piezoconductivity. Membrane thickness governs the hybridization of topological electronic states on opposite surfaces, while elastic strain can further modulate the hybridization strength by controlling the penetration length of surface states. We introduce a frequency-resolved infrared photodetector using force-concentration induced inhomogeneous elastic strain in TCI nanomembranes with spatially varying width. The predicted tunable band gap accompanied by strong spin-textured electronic states will open new avenues for fabricating piezoresistive devices, infrared detectors and energy-efficient electronic and spintronic devices based on TCI nanomembrane.},
doi = {10.1007/s12274-014-0578-9},
journal = {Nano Research},
number = 3,
volume = 8,
place = {United States},
year = {2014},
month = {10}
}

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