Quantum spin Hall effect in two-dimensional transition metal dichalcogenides
Abstract
Quantum spin Hall (QSH) effect materials feature edge states that are topologically protected from backscattering. However, the small band gap in materials that have been identified as QSH insulators limits applications. We use first-principles calculations to predict a class of large-gap QSH insulators in two-dimensional transition metal dichalcogenides with 1T' structure, namely, 1T'-MX2 with M = (tungsten or molybdenum) and X = (tellurium, selenium, or sulfur). A structural distortion causes an intrinsic band inversion between chalcogenide-p and metal-d bands. Additionally, spin-orbit coupling opens a gap that is tunable by vertical electric field and strain. We propose a topological field effect transistor made of van der Waals heterostructures of 1T'-MX2 and two-dimensional dielectric layers that can be rapidly switched off by electric field through a topological phase transition instead of carrier depletion.
- Authors:
-
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Publication Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1557594
- Grant/Contract Number:
- SC0010526
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science
- Additional Journal Information:
- Journal Volume: 346; Journal Issue: 6215; Journal ID: ISSN 0036-8075
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Qian, Xiaofeng, Liu, Junwei, Fu, Liang, and Li, Ju. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides. United States: N. p., 2014.
Web. doi:10.1126/science.1256815.
Qian, Xiaofeng, Liu, Junwei, Fu, Liang, & Li, Ju. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides. United States. https://doi.org/10.1126/science.1256815
Qian, Xiaofeng, Liu, Junwei, Fu, Liang, and Li, Ju. Fri .
"Quantum spin Hall effect in two-dimensional transition metal dichalcogenides". United States. https://doi.org/10.1126/science.1256815. https://www.osti.gov/servlets/purl/1557594.
@article{osti_1557594,
title = {Quantum spin Hall effect in two-dimensional transition metal dichalcogenides},
author = {Qian, Xiaofeng and Liu, Junwei and Fu, Liang and Li, Ju},
abstractNote = {Quantum spin Hall (QSH) effect materials feature edge states that are topologically protected from backscattering. However, the small band gap in materials that have been identified as QSH insulators limits applications. We use first-principles calculations to predict a class of large-gap QSH insulators in two-dimensional transition metal dichalcogenides with 1T' structure, namely, 1T'-MX2 with M = (tungsten or molybdenum) and X = (tellurium, selenium, or sulfur). A structural distortion causes an intrinsic band inversion between chalcogenide-p and metal-d bands. Additionally, spin-orbit coupling opens a gap that is tunable by vertical electric field and strain. We propose a topological field effect transistor made of van der Waals heterostructures of 1T'-MX2 and two-dimensional dielectric layers that can be rapidly switched off by electric field through a topological phase transition instead of carrier depletion.},
doi = {10.1126/science.1256815},
journal = {Science},
number = 6215,
volume = 346,
place = {United States},
year = {Fri Dec 12 00:00:00 EST 2014},
month = {Fri Dec 12 00:00:00 EST 2014}
}
Web of Science
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Observation of Coulomb gap in the quantum spin Hall candidate single-layer 1T'-WTe$_2$
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Quantitative mappings between symmetry and topology in solids
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Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-layer WSe2
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Evidence for a quantum-spin-Hall phase in graphene decorated with Bi2Te3 nanoparticles
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Intrinsic magnetic topological insulators in van der Waals layered MnBi$_2$Te$_4$-family materials
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Gate-induced superconductivity in a monolayer topological insulator
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Crystal field, ligand field, and interorbital effects in two-dimensional transition metal dichalcogenides across the periodic table
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Nodeless Superconductivity and its Evolution with Pressure in the Layered Dirac Semimetal 2M-WS_2
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Observation of topological states residing at step edges of WTe2
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Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2
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A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides
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Boron Triangular Kagome Lattice with Half-Metallic Ferromagnetism
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Spin valley and giant quantum spin Hall gap of hydrofluorinated bismuth nanosheet
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Angle-resolved photoemission spectroscopy for the study of two-dimensional materials
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Ab initio study of adsorption and diffusion of lithium on transition metal dichalcogenide monolayers
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Novel effects of strains in graphene and other two dimensional materials
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Observation of Coulomb gap in the quantum spin Hall candidate single-layer 1T'-WTe$_2$
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