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Title: Discovery of robust in-plane ferroelectricity in atomic-thick SnTe


Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature Tc of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.

 [1];  [2];  [1];  [1];  [1];  [3];  [3];  [1];  [1];  [1];  [4];  [5];  [1];  [1];  [6]
  1. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
  2. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. Renmin Univ. of China, Beijing (China)
  4. Renmin Univ. of China, Beijing (China); Collaborative Innovation Center of Advanced Microstructures, Shanghai (China)
  5. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  6. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Inst. of Physical and Chemical Research (RIKEN), Wako (Japan)
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
Grant/Contract Number:  
Resource Type:
Accepted Manuscript
Journal Name:
Additional Journal Information:
Journal Volume: 353; Journal Issue: 6296; Journal ID: ISSN 0036-8075
Country of Publication:
United States

Citation Formats

Chang, Kai, Liu, Junwei, Lin, Haicheng, Wang, Na, Zhao, Kun, Zhang, Anmin, Jin, Feng, Zhong, Yong, Hu, Xiaopeng, Duan, Wenhui, Zhang, Qingming, Fu, Liang, Xue, Qi-Kun, Chen, Xi, and Ji, Shuai-Hua. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. United States: N. p., 2016. Web.
Chang, Kai, Liu, Junwei, Lin, Haicheng, Wang, Na, Zhao, Kun, Zhang, Anmin, Jin, Feng, Zhong, Yong, Hu, Xiaopeng, Duan, Wenhui, Zhang, Qingming, Fu, Liang, Xue, Qi-Kun, Chen, Xi, & Ji, Shuai-Hua. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. United States.
Chang, Kai, Liu, Junwei, Lin, Haicheng, Wang, Na, Zhao, Kun, Zhang, Anmin, Jin, Feng, Zhong, Yong, Hu, Xiaopeng, Duan, Wenhui, Zhang, Qingming, Fu, Liang, Xue, Qi-Kun, Chen, Xi, and Ji, Shuai-Hua. Fri . "Discovery of robust in-plane ferroelectricity in atomic-thick SnTe". United States.
title = {Discovery of robust in-plane ferroelectricity in atomic-thick SnTe},
author = {Chang, Kai and Liu, Junwei and Lin, Haicheng and Wang, Na and Zhao, Kun and Zhang, Anmin and Jin, Feng and Zhong, Yong and Hu, Xiaopeng and Duan, Wenhui and Zhang, Qingming and Fu, Liang and Xue, Qi-Kun and Chen, Xi and Ji, Shuai-Hua},
abstractNote = {Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature Tc of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.},
doi = {10.1126/science.aad8609},
journal = {Science},
number = 6296,
volume = 353,
place = {United States},
year = {2016},
month = {7}

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Works referenced in this record:

Two-dimensional gas of massless Dirac fermions in graphene
journal, November 2005

  • Novoselov, K. S.; Geim, A. K.; Morozov, S. V.
  • Nature, Vol. 438, Issue 7065, p. 197-200
  • DOI: 10.1038/nature04233

Experimental observation of the quantum Hall effect and Berry's phase in graphene
journal, November 2005

  • Zhang, Yuanbo; Tan, Yan-Wen; Stormer, Horst L.
  • Nature, Vol. 438, Issue 7065, p. 201-204
  • DOI: 10.1038/nature04235

High-temperature interface superconductivity between metallic and insulating copper oxides
journal, October 2008

  • Gozar, A.; Logvenov, G.; Kourkoutis, L. Fitting
  • Nature, Vol. 455, Issue 7214, p. 782-785
  • DOI: 10.1038/nature07293

Superconductivity in one-atomic-layer metal films grown on Si(111)
journal, January 2010

  • Zhang, Tong; Cheng, Peng; Li, Wen-Juan
  • Nature Physics, Vol. 6, Issue 2
  • DOI: 10.1038/nphys1499

Magnetic Phase Transition in Two-Dimensional Ultrathin Fe Films on Au(100)
journal, January 1989

Ferromagnetic order and the critical exponent γ for a Gd monolayer: An electron-spin-resonance study
journal, February 1987

Strongly enhanced charge-density-wave order in monolayer NbSe2
journal, July 2015

  • Xi, Xiaoxiang; Zhao, Liang; Wang, Zefang
  • Nature Nanotechnology, Vol. 10, Issue 9, p. 765-769
  • DOI: 10.1038/nnano.2015.143

Characterization of collective ground states in single-layer NbSe2
journal, November 2015

  • Ugeda, Miguel M.; Bradley, Aaron J.; Zhang, Yi
  • Nature Physics, Vol. 12, Issue 1
  • DOI: 10.1038/nphys3527

Ferroelectricity in thin perovskite films
journal, August 1999

  • Tybell, T.; Ahn, C. H.; Triscone, J.-M.
  • Applied Physics Letters, Vol. 75, Issue 6, p. 856-858
  • DOI: 10.1063/1.124536

Ferroelectricity in Ultrathin Perovskite Films
journal, June 2004

  • Fong, Dillon D.; Stephenson, G. Brian; Streiffer, Stephen K.
  • Science, Vol. 304, Issue 5677, p. 1650-1653
  • DOI: 10.1126/science.1098252

Stabilization of Monodomain Polarization in Ultrathin PbTiO 3 Films
journal, March 2006

Ferroelectricity in Ultrathin BaTiO 3 Films: Probing the Size Effect by Ultraviolet Raman Spectroscopy
journal, October 2009

Microscopic model of ferroelectricity in stress-free PbTiO3 ultrathin films
journal, May 2000

  • Ghosez, Ph.; Rabe, K. M.
  • Applied Physics Letters, Vol. 76, Issue 19, p. 2767-2769
  • DOI: 10.1063/1.126469

Critical thickness for ferroelectricity in perovskite ultrathin films
journal, April 2003

  • Junquera, Javier; Ghosez, Philippe
  • Nature, Vol. 422, Issue 6931, p. 506-509
  • DOI: 10.1038/nature01501

Ferroelectricity in Pb ( Zr 0.5 Ti 0.5 ) O 3 thin films: Critical thickness and 180° stripe domains
journal, September 2004

  • Wu, Zhongqing; Huang, Ningdong; Liu, Zhirong
  • Physical Review B, Vol. 70, Issue 10, Article No. 104108
  • DOI: 10.1103/PhysRevB.70.104108

Ferroelectricity in ultrathin perovskite films
journal, July 2005

  • Sai, Na; Kolpak, Alexie M.; Rappe, Andrew M.
  • Physical Review B, Vol. 72, Issue 2, Article No. 020101
  • DOI: 10.1103/PhysRevB.72.020101

Absence of Critical Thickness in an Ultrathin Improper Ferroelectric Film
journal, March 2009

Disappearance of ferroelectric critical thickness in epitaxial ultrathin BaZr O 3 films
journal, November 2014

  • Zhang, Yajun; Li, Gui-Ping; Shimada, Takahiro
  • Physical Review B, Vol. 90, Issue 18, Article No. 184107
  • DOI: 10.1103/PhysRevB.90.184107

Dependence of Curie temperature on the thickness of an ultrathin ferroelectric film
journal, February 2010

  • Almahmoud, Emad; Kornev, Igor; Bellaiche, L.
  • Physical Review B, Vol. 81, Issue 6, Article No. 064105
  • DOI: 10.1103/PhysRevB.81.064105

Two-dimensional ferroelectric films
journal, February 1998

  • Bune, A. V.; Fridkin, V. M.; Ducharme, Stephen
  • Nature, Vol. 391, Issue 6670, p. 874-877
  • DOI: 10.1038/36069

Band Structure and Laser Action in Pb x Sn 1 x Te
journal, June 1966

  • Dimmock, J. O.; Melngailis, I.; Strauss, A. J.
  • Physical Review Letters, Vol. 16, Issue 26, p. 1193-1196
  • DOI: 10.1103/PhysRevLett.16.1193

Microscopic origin of the p -type conductivity of the topological crystalline insulator SnTe and the effect of Pb alloying
journal, January 2014

Observation of soft TO-phonon in SnTe by Raman scattering
journal, July 1977

Carrier-Concentration-Dependent Phase Transition in SnTe
journal, September 1976

  • Kobayashi, K. L. I.; Kato, Y.; Katayama, Y.
  • Physical Review Letters, Vol. 37, Issue 12, p. 772-774
  • DOI: 10.1103/PhysRevLett.37.772

Phase Transition in SnTe with Low Carrier Concentration
journal, February 1975

  • Iizumi, Masashi; Hamaguchi, Yoshikazu; Komatsubara, Kiichi F.
  • Journal of the Physical Society of Japan, Vol. 38, Issue 2, p. 443-449
  • DOI: 10.1143/JPSJ.38.443

Topological crystalline insulators in the SnTe material class
journal, January 2012

  • Hsieh, Timothy H.; Lin, Hsin; Liu, Junwei
  • Nature Communications, Vol. 3, Article No. 982
  • DOI: 10.1038/ncomms1969

Multiple Stable States with In-Plane Anisotropy in Ultrathin YMnO3 Films
journal, November 2010

  • Sheng, Zhigao; Ogawa, Naoki; Ogimoto, Yasushi
  • Advanced Materials, Vol. 22, Issue 48, p. 5507-5511
  • DOI: 10.1002/adma.201002743

Giant tunnel electroresistance for non-destructive readout of ferroelectric states
journal, May 2009

  • Garcia, V.; Fusil, S.; Bouzehouane, K.
  • Nature, Vol. 460, Issue 7251, p. 81-84
  • DOI: 10.1038/nature08128

The Influence of the Dipolar Field Effect on the Photochemical Reactivity of Sr2Nb2O7 and BaTiO3 Microcrystals
journal, May 2008

X-ray study of the structural phase transition in Sn x Ge 1 x Te
journal, November 1978

The observation of critical behaviour in the thermal expansion of PbZr0.9Ti0.1O3
journal, June 1974

  • Clarke, R.; Glazer, A. M.
  • Journal of Physics C: Solid State Physics, Vol. 7, Issue 12, p. 2147-2156
  • DOI: 10.1088/0022-3719/7/12/008

Relaxation of the rocksalt (001) surface: Alkali halides, MgO, and PbS
journal, September 1985

Important Generalization Concerning the Role of Competing Forces in Displacive Phase Transitions
journal, December 1975

Enhancement of Ferroelectricity in Strained BaTiO3 Thin Films
journal, November 2004

Room-temperature ferroelectricity in strained SrTiO3
journal, August 2004

  • Haeni, J. H.; Irvin, P.; Chang, W.
  • Nature, Vol. 430, Issue 7001, p. 758-761
  • DOI: 10.1038/nature02773

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Projector augmented-wave method
journal, December 1994

Theory of polarization of crystalline solids
journal, January 1993

First-principles calculations for defects and impurities: Applications to III-nitrides
journal, April 2004

  • Van de Walle, Chris G.; Neugebauer, Jörg
  • Journal of Applied Physics, Vol. 95, Issue 8
  • DOI: 10.1063/1.1682673

Finite-Size Supercell Correction for Charged Defects at Surfaces and Interfaces
journal, February 2013

Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations
journal, January 2009

Structural stability and topological surface states of the SnTe (111) surface
journal, March 2014

Composition, structure, and stability of RuO 2 ( 110 ) as a function of oxygen pressure
journal, December 2001

On the Influence of Conduction Electrons on the Ferroelectric Curie Temperature
journal, January 1969

    Works referencing / citing this record:

    SnTe@MnO 2 ‐SP Nanosheet–Based Intelligent Nanoplatform for Second Near‐Infrared Light–Mediated Cancer Theranostics
    journal, July 2019

    • Zhang, Hanjie; Zeng, Weiwei; Pan, Chao
    • Advanced Functional Materials, Vol. 29, Issue 37
    • DOI: 10.1002/adfm.201903791

    Ferroelectric and Piezoelectric Effects on the Optical Process in Advanced Materials and Devices
    journal, June 2018

    Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure
    journal, September 2018

    • Chang, Kai; Kaloni, Thaneshwor P.; Lin, Haicheng
    • Advanced Materials, Vol. 31, Issue 3
    • DOI: 10.1002/adma.201804428

    H/F‐Substitution‐Induced Homochirality for Designing High‐ T c Molecular Perovskite Ferroelectrics
    journal, May 2019

    • Tang, Yuan‐Yuan; Ai, Yong; Liao, Wei‐Qiang
    • Advanced Materials, Vol. 31, Issue 29
    • DOI: 10.1002/adma.201902163

    Design of Single-Molecule Multiferroics for Efficient Ultrahigh-Density Nonvolatile Memories
    journal, November 2018

    Tunable Topological Energy Bands in 2D Dialkali‐Metal Monoxides
    journal, January 2020

    PVDF-Based Ferroelectric Polymers in Modern Flexible Electronics
    journal, January 2017

    • Chen, Xin; Han, Xu; Shen, Qun-Dong
    • Advanced Electronic Materials, Vol. 3, Issue 5
    • DOI: 10.1002/aelm.201600460

    Recent Progress in Two‐Dimensional Ferroelectric Materials
    journal, November 2019

    Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides
    journal, November 2019

    • Xu, Tao; Wang, Xiaoyuan; Mai, Jiawei
    • Advanced Electronic Materials, Vol. 6, Issue 1
    • DOI: 10.1002/aelm.201900932

    Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier
    journal, November 2019

    • Dai, Mingjin; Li, Kai; Wang, Fakun
    • Advanced Electronic Materials, Vol. 6, Issue 2
    • DOI: 10.1002/aelm.201900975

    Thickness‐Dependent In‐Plane Polarization and Structural Phase Transition in van der Waals Ferroelectric CuInP 2 S 6
    journal, December 2019

    The rise of two-dimensional van der Waals ferroelectrics
    journal, May 2018

    • Wu, Menghao; Jena, Puru
    • Wiley Interdisciplinary Reviews: Computational Molecular Science, Vol. 8, Issue 5
    • DOI: 10.1002/wcms.1365

    The emerging ferroic orderings in two dimensions
    journal, November 2019

    Formation of resonant bonding during growth of ultrathin GeTe films
    journal, June 2017

    • Wang, Ruining; Zhang, Wei; Momand, Jamo
    • NPG Asia Materials, Vol. 9, Issue 6
    • DOI: 10.1038/am.2017.95

    Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials
    journal, April 2017

    • Ding, Wenjun; Zhu, Jianbao; Wang, Zhe
    • Nature Communications, Vol. 8, Issue 1
    • DOI: 10.1038/ncomms14956

    Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit
    journal, April 2019

    Prediction of ferroelectricity-driven Berry curvature enabling charge- and spin-controllable photocurrent in tin telluride monolayers
    journal, September 2019

    Band splitting with vanishing spin polarizations in noncentrosymmetric crystals
    journal, November 2019

    Superconductivity in few-layer stanene
    journal, January 2018

    Ferroelectric quantum Hall phase revealed by visualizing Landau level wavefunction interference
    journal, May 2018

    Ferroelectric switching of a two-dimensional metal
    journal, July 2018

    Catalogue of topological electronic materials
    journal, February 2019

    Surface-energy engineered Bi-doped SnTe nanoribbons with weak antilocalization effect and linear magnetoresistance
    journal, January 2016

    • Zou, Yi-Chao; Chen, Zhi-Gang; Kong, Fantai
    • Nanoscale, Vol. 8, Issue 46
    • DOI: 10.1039/c6nr07140f

    All-phosphorus flexible devices with non-collinear electrodes: a first principles study
    journal, January 2018

    • Li, Junjun; Ruan, Lufeng; Wu, Zewen
    • Physical Chemistry Chemical Physics, Vol. 20, Issue 10
    • DOI: 10.1039/c7cp08462e

    Robust ferroelectricity in two-dimensional SbN and BiP
    journal, January 2018

    The journey of tin chalcogenides towards high-performance thermoelectrics and topological materials
    journal, January 2018

    • Banik, Ananya; Roychowdhury, Subhajit; Biswas, Kanishka
    • Chemical Communications, Vol. 54, Issue 50
    • DOI: 10.1039/c8cc02230e

    Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In 2 Se 3 thin layers
    journal, January 2018

    Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene
    journal, January 2018

    • Sadowski, Janusz; Dziawa, Piotr; Kaleta, Anna
    • Nanoscale, Vol. 10, Issue 44
    • DOI: 10.1039/c8nr06096g

    Intrinsic multiferroicity in two-dimensional VOCl 2 monolayers
    journal, January 2019

    • Ai, Haoqiang; Song, Xiaohan; Qi, Siyun
    • Nanoscale, Vol. 11, Issue 3
    • DOI: 10.1039/c8nr08270g

    Intrinsic interaction between in-plane ferroelectric polarization and surface adsorption
    journal, January 2019

    • Wang, Zhi-Wen; Shu, Da-Jun
    • Physical Chemistry Chemical Physics, Vol. 21, Issue 34
    • DOI: 10.1039/c9cp03286j

    Discovery of twin orbital-order phases in ferromagnetic semiconducting VI 3 monolayer
    journal, January 2020

    • Huang, Chengxi; Wu, Fang; Yu, Shunli
    • Physical Chemistry Chemical Physics, Vol. 22, Issue 2
    • DOI: 10.1039/c9cp05643b

    Robust two-dimensional ferroelectricity in single-layer γ-SbP and γ-SbAs
    journal, January 2019

    • Shen, Shiying; Liu, Chang; Ma, Yandong
    • Nanoscale, Vol. 11, Issue 24
    • DOI: 10.1039/c9nr02265a

    Unconventional inner-TL electric polarization in TL-LaOBiS 2 with ultrahigh carrier mobility
    journal, January 2019

    • He, Chao; Zhu, Jiajun; Zhao, Yong-Hong
    • Nanoscale, Vol. 11, Issue 39
    • DOI: 10.1039/c9nr05282h

    Vertical ferroelectric switching by in-plane sliding of two-dimensional bilayer WTe 2
    journal, January 2019

    Defect repair for enhanced piezo-phototronic MoS 2 flexible phototransistors
    journal, January 2019

    • Lin, Pei; Zhu, Laipan; Li, Ding
    • Journal of Materials Chemistry C, Vol. 7, Issue 46
    • DOI: 10.1039/c9tc05337a

    Promising ferroelectricity in 2D group IV tellurides: a first-principles study
    journal, September 2017

    • Wan, Wenhui; Liu, Chang; Xiao, Wende
    • Applied Physics Letters, Vol. 111, Issue 13
    • DOI: 10.1063/1.4996171

    Non-monotonic thickness dependence of Curie temperature and ferroelectricity in two-dimensional SnTe film
    journal, August 2018

    • Yang, Chao; Liu, Yanyu; Tang, Gang
    • Applied Physics Letters, Vol. 113, Issue 8
    • DOI: 10.1063/1.5040671

    Self-screening induced abnormal stability of ferroelectric phase in GeTe ultrathin films
    journal, December 2018

    • Wang, Xiaojie; Zhou, Lingjun; Feng, Jinlong
    • Applied Physics Letters, Vol. 113, Issue 23
    • DOI: 10.1063/1.5049888

    Promising thermoelectric properties and anisotropic electrical and thermal transport of monolayer SnTe
    journal, February 2019

    • Li, Y.; Wu, M. N.; Ding, T.
    • Applied Physics Letters, Vol. 114, Issue 8
    • DOI: 10.1063/1.5085255

    The growth and phase distribution of ultrathin SnTe on graphene
    journal, April 2019

    • Chang, Kai; Parkin, Stuart S. P.
    • APL Materials, Vol. 7, Issue 4
    • DOI: 10.1063/1.5091546

    Ab initio simulation studies on the room-temperature ferroelectricity in two-dimensional β -phase GeS
    journal, May 2019

    • Yin, Huabing; Liu, Chang; Zheng, Guang-Ping
    • Applied Physics Letters, Vol. 114, Issue 19
    • DOI: 10.1063/1.5097425

    Room-temperature out-of-plane and in-plane ferroelectricity of two-dimensional β-InSe nanoflakes
    journal, June 2019

    • Hu, Haowen; Sun, Yilin; Chai, Maosheng
    • Applied Physics Letters, Vol. 114, Issue 25
    • DOI: 10.1063/1.5097842

    Electric field control of the semiconductor-metal transition in two dimensional CuInP 2 S 6 /germanene van der Waals heterostructure
    journal, June 2019

    • Zhu, Ziye; Chen, Xiaofang; Li, Wenbin
    • Applied Physics Letters, Vol. 114, Issue 22
    • DOI: 10.1063/1.5100240

    Tuning ferroelectricity by charge doping in two-dimensional SnSe
    journal, January 2020

    • Zhu, Liying; Lu, Yan; Wang, Li
    • Journal of Applied Physics, Vol. 127, Issue 1
    • DOI: 10.1063/1.5123296

    The rise of 2D dielectrics/ferroelectrics
    journal, December 2019

    • Osada, Minoru; Sasaki, Takayoshi
    • APL Materials, Vol. 7, Issue 12
    • DOI: 10.1063/1.5129447

    γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism
    journal, December 2019

    • Liu, Chang; Guan, Shan; Yin, Huabing
    • Applied Physics Letters, Vol. 115, Issue 25
    • DOI: 10.1063/1.5133022

    Topology on a new facet of bismuth
    journal, June 2019

    • Hsu, Chuang-Han; Zhou, Xiaoting; Chang, Tay-Rong
    • Proceedings of the National Academy of Sciences, Vol. 116, Issue 27
    • DOI: 10.1073/pnas.1900527116

    First principles study of the gas sensing 2D GeTe: atomic, electronic and transport properties
    journal, August 2018

    • Zhang, Xilin; Chen, Yue; Yang, Zongxian
    • Journal of Physics D: Applied Physics, Vol. 51, Issue 34
    • DOI: 10.1088/1361-6463/aad45a

    Electronegativity, phase transition, and ferroelectricity of TeSe 2 few-layers
    journal, October 2019

    • Debela, Tekalign Terfa; Liu, Shuyuan; Choi, Jin-Ho
    • Journal of Physics: Condensed Matter, Vol. 32, Issue 4
    • DOI: 10.1088/1361-648x/ab4ac2

    Microscopic study of thermoelectric In-doped SnTe
    journal, April 2018

    Electronic and optical properties of strained graphene and other strained 2D materials: a review
    journal, August 2017

    • Naumis, Gerardo G.; Barraza-Lopez, Salvador; Oliva-Leyva, Maurice
    • Reports on Progress in Physics, Vol. 80, Issue 9
    • DOI: 10.1088/1361-6633/aa74ef

    Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi 2 Ta 2 O 9 films
    journal, April 2018

    • Song, Zhiwei; Li, Gang; Xiong, Ying
    • Semiconductor Science and Technology, Vol. 33, Issue 5
    • DOI: 10.1088/1361-6641/aaba26

    Two-dimensional multiferroics in monolayer group IV monochalcogenides
    journal, January 2017

    On the origin of magnetic anisotropy in two dimensional CrI 3
    journal, June 2017

    Giant spin Hall effect in two-dimensional monochalcogenides
    journal, February 2019

    2D SnSe/Si heterojunction for self-driven broadband photodetectors
    journal, May 2019

    Purely rotational symmetry-protected topological crystalline insulator $\alpha$ -Bi 4 Br 4
    journal, May 2019

    The phonon-related effective Hamiltonian method for displacive ferroelectric materials
    journal, December 2019

    Intrinsic persistent spin helix state in two-dimensional group-IV monochalcogenide M X monolayers ( M = Sn or Ge and X = S , Se, or Te)
    journal, September 2019

    Proximity-induced superconductivity in a topological crystalline insulator
    journal, December 2019

    Quantitative relationship between polarization differences and the zone-averaged shift photocurrent
    journal, August 2017

    Two-dimensional square buckled Rashba lead chalcogenides
    journal, October 2017

    Two-dimensional hyperferroelectric metals: A different route to ferromagnetic-ferroelectric multiferroics
    journal, December 2017

    Tuning the ferroelectric-to-paraelectric transition temperature and dipole orientation of group-IV monochalcogenide monolayers
    journal, January 2018

    • Barraza-Lopez, Salvador; Kaloni, Thaneshwor P.; Poudel, Shiva P.
    • Physical Review B, Vol. 97, Issue 2
    • DOI: 10.1103/physrevb.97.024110

    Tunable ferroelectricity and anisotropic electric transport in monolayer β -GeSe
    journal, April 2018

    Strain-induced gauge and Rashba fields in ferroelectric Rashba lead chalcogenide Pb X monolayers ( X = S , Se, Te)
    journal, June 2018

    From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films
    journal, April 2019

    Two-dimensional ferromagnetic-ferroelectric multiferroics in violation of the d 0 rule
    journal, May 2019

    Prediction of Intrinsic Ferromagnetic Ferroelectricity in a Transition-Metal Halide Monolayer
    journal, April 2018

    Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking
    journal, May 2018

    Standing Waves Induced by Valley-Mismatched Domains in Ferroelectric SnTe Monolayers
    journal, May 2019

    New two-dimensional phase of tin chalcogenides: Candidates for high-performance thermoelectric materials
    journal, January 2019

    Negative Poisson's ratio in puckered two-dimensional materials
    journal, May 2019

    Group-IV monochalcogenide monolayers: Two-dimensional ferroelectrics with weak intralayer bonds and a phosphorenelike monolayer dissociation energy
    journal, December 2019

    Nonvolatile Electrical Control and Heterointerface‐Induced Half‐Metallicity of 2D Ferromagnets
    journal, April 2019

    • Zhao, Yinghe; Zhang, Jun‐Jie; Yuan, Shijun
    • Advanced Functional Materials, Vol. 29, Issue 24
    • DOI: 10.1002/adfm.201901420

    Manipulation of Phonon Transport in Thermoelectrics
    journal, February 2018

    • Chen, Zhiwei; Zhang, Xinyue; Pei, Yanzhong
    • Advanced Materials, Vol. 30, Issue 17
    • DOI: 10.1002/adma.201705617

    In-Plane Ferroelectricity in Thin Flakes of Van der Waals Hybrid Perovskite
    journal, October 2018

    High Bipolar Conductivity and Robust In-Plane Spontaneous Electric Polarization in Selenene
    journal, November 2018

    • Wang, Dan; Tang, Li-Ming; Jiang, Xing-Xing
    • Advanced Electronic Materials, Vol. 5, Issue 2
    • DOI: 10.1002/aelm.201800475

    Progress and prospects in low-dimensional multiferroic materials
    journal, January 2019

    • Hu, Ting; Kan, Erjun
    • Wiley Interdisciplinary Reviews: Computational Molecular Science, Vol. 9, Issue 5
    • DOI: 10.1002/wcms.1409

    Structural, Electronic and Thermoelectric Properties of Pb1−xSnxTe Alloys
    journal, October 2019

    • Pandit, Abhiyan; Haleoot, Raad; Hamad, Bothina
    • Journal of Electronic Materials, Vol. 49, Issue 1
    • DOI: 10.1007/s11664-019-07715-4

    Normal-to-topological insulator martensitic phase transition in group-IV monochalcogenides driven by light
    journal, January 2020

    Two-dimensional materials with piezoelectric and ferroelectric functionalities
    journal, June 2018

    Black phosphorus and its isoelectronic materials
    journal, April 2019

    Monolayer AgBiP 2 Se 6 : an atomically thin ferroelectric semiconductor with out-plane polarization
    journal, January 2017

    Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers
    journal, January 2018

    • Wang, Yao; Xiao, Chengcheng; Chen, Miaogen
    • Materials Horizons, Vol. 5, Issue 3
    • DOI: 10.1039/c8mh00082d

    Unconventional two-dimensional germanium dichalcogenides
    journal, January 2018

    • Wang, Jiangjing; Ronneberger, Ider; Zhou, Ling
    • Nanoscale, Vol. 10, Issue 16
    • DOI: 10.1039/c8nr01747f

    Fluorination observed T c increase of 110 K is challenging the hydrogen–deuterium isotope effect
    journal, January 2019

    • Liu, Yu-Ling; Lu, Si-Qi; Tang, Yuan-Yuan
    • Chemical Communications, Vol. 55, Issue 67
    • DOI: 10.1039/c9cc04658e

    Modulating the electronic structures of blue phosphorene towards spintronics
    journal, January 2019

    • Lu, Xiang-Qian; Wang, Chuan-Kui; Fu, Xiao-Xiao
    • Physical Chemistry Chemical Physics, Vol. 21, Issue 22
    • DOI: 10.1039/c9cp01684h

    Two-dimensional ferromagnetism and driven ferroelectricity in van der Waals CuCrP 2 S 6
    journal, January 2019

    • Lai, Youfang; Song, Zhigang; Wan, Yi
    • Nanoscale, Vol. 11, Issue 12
    • DOI: 10.1039/c9nr00738e

    Two-dimensional multiferroic semiconductors with coexisting ferroelectricity and ferromagnetism
    journal, July 2018

    • Qi, Jingshan; Wang, Hua; Chen, Xiaofang
    • Applied Physics Letters, Vol. 113, Issue 4
    • DOI: 10.1063/1.5038037

    The coexistence of ferroelectricity and topological phase transition in monolayer α -In 2 Se 3 under strain engineering
    journal, December 2019

    • Jiang, Xingxing; Feng, Yexin; Chen, Ke-Qiu
    • Journal of Physics: Condensed Matter, Vol. 32, Issue 10
    • DOI: 10.1088/1361-648x/ab58f1

    Recent progress in 2D group IV–IV monochalcogenides: synthesis, properties and applications
    journal, April 2019

    Shift-current bulk photovoltaic effect influenced by quasiparticle and exciton
    journal, January 2020

    Photostrictive Two-Dimensional Materials in the Monochalcogenide Family
    journal, May 2017

    Frustrated Dipole Order Induces Noncollinear Proper Ferrielectricity in Two Dimensions
    journal, August 2019

    Room temperature in-plane ferroelectricity in van der Waals In 2 Se 3
    journal, July 2018

    Ferroicity-driven nonlinear photocurrent switching in time-reversal invariant ferroic materials
    journal, August 2019

    Ferroelectric chalcogenides—materials at the edge
    journal, July 2016

    Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
    journal, April 2020

    Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation
    journal, January 2018

    • Higashitarumizu, Naoki; Kawamoto, Hayami; Nakamura, Masaru
    • Nanoscale, Vol. 10, Issue 47
    • DOI: 10.1039/c8nr06390g

    A two-dimensional robust topological insulator with coexisting ferroelectric and valley polarization
    journal, January 2019

    • Hu, Xing-kai; Pang, Zhao-xia; Zhang, Chang-wen
    • Journal of Materials Chemistry C, Vol. 7, Issue 30
    • DOI: 10.1039/c8tc06252h

    Atomic-scale mapping of interface reconstructions in multiferroic heterostructures
    journal, December 2018

    • Huang, Weichuan; Yin, Yuewei; Li, Xiaoguang
    • Applied Physics Reviews, Vol. 5, Issue 4
    • DOI: 10.1063/1.5053426

    Emergence of the giant out-of-plane Rashba effect and tunable nanoscale persistent spin helix in ferroelectric SnTe thin films
    journal, January 2020

    • Lee, Hosik; Im, Jino; Jin, Hosub
    • Applied Physics Letters, Vol. 116, Issue 2
    • DOI: 10.1063/1.5137753