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Title: Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Journal Article · · Science
 [1];  [2];  [1];  [1];  [1];  [3];  [3];  [1];  [1];  [1];  [4];  [5];  [1];  [1];  [6]
  1. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
  2. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. Renmin Univ. of China, Beijing (China)
  4. Renmin Univ. of China, Beijing (China); Collaborative Innovation Center of Advanced Microstructures, Shanghai (China)
  5. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  6. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Inst. of Physical and Chemical Research (RIKEN), Wako (Japan)

Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature Tc of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.

Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0010526
OSTI ID:
1557590
Journal Information:
Science, Vol. 353, Issue 6296; ISSN 0036-8075
Publisher:
AAASCopyright Statement
Country of Publication:
United States
Language:
English

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