Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Chang, Kai; Liu, Junwei; Lin, Haicheng; Wang, Na; Zhao, Kun; Zhang, Anmin; Jin, Feng; Zhong, Yong; Hu, Xiaopeng; Duan, Wenhui; Zhang, Qingming; Fu, Liang; Xue, Qi-Kun; Chen, Xi; Ji, Shuai-Hua

doi:10.1126/science.aad8609

Title: Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Journal Article · 15 July 2016 · Science

DOI: https://doi.org/10.1126/science.aad8609 · OSTI ID:1557590

Chang, Kai ^[1]; Liu, Junwei ^[2]; Lin, Haicheng ^[1]; Wang, Na ^[1]; Zhao, Kun ^[1]; Zhang, Anmin ^[3]; Jin, Feng ^[3]; Zhong, Yong ^[1]; Hu, Xiaopeng ^[1]; Duan, Wenhui ^[1]; Zhang, Qingming ^[4]; Fu, Liang ^[5]; Xue, Qi-Kun ^[1]; Chen, Xi ^[1]; Ji, Shuai-Hua ^[6]

Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Renmin Univ. of China, Beijing (China)
Renmin Univ. of China, Beijing (China); Collaborative Innovation Center of Advanced Microstructures, Shanghai (China)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Inst. of Physical and Chemical Research (RIKEN), Wako (Japan)

Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature T_c of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.

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Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0010526

OSTI ID:: 1557590

Journal Information:: Science, Vol. 353, Issue 6296; ISSN 0036-8075

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Structural, Electronic and Thermoelectric Properties of Pb1−xSnxTe Alloys Pandit, Abhiyan; Haleoot, Raad; Hamad, Bothina Journal of Electronic Materials, Vol. 49, Issue 1 https://doi.org/10.1007/s11664-019-07715-4	journal	October 2019
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Two-dimensional materials with piezoelectric and ferroelectric functionalities Cui, Chaojie; Xue, Fei; Hu, Wei-Jin npj 2D Materials and Applications, Vol. 2, Issue 1 https://doi.org/10.1038/s41699-018-0063-5	journal	June 2018
Black phosphorus and its isoelectronic materials Xia, Fengnian; Wang, Han; Hwang, James C. M. Nature Reviews Physics, Vol. 1, Issue 5 https://doi.org/10.1038/s42254-019-0043-5	journal	April 2019
Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers Wang, Yao; Xiao, Chengcheng; Chen, Miaogen Materials Horizons, Vol. 5, Issue 3 https://doi.org/10.1039/c8mh00082d	journal	January 2018
Unconventional two-dimensional germanium dichalcogenides Wang, Jiangjing; Ronneberger, Ider; Zhou, Ling Nanoscale, Vol. 10, Issue 16 https://doi.org/10.1039/c8nr01747f	journal	January 2018
Fluorination observed T _c increase of 110 K is challenging the hydrogen–deuterium isotope effect Liu, Yu-Ling; Lu, Si-Qi; Tang, Yuan-Yuan Chemical Communications, Vol. 55, Issue 67 https://doi.org/10.1039/c9cc04658e	journal	January 2019
Modulating the electronic structures of blue phosphorene towards spintronics Lu, Xiang-Qian; Wang, Chuan-Kui; Fu, Xiao-Xiao Physical Chemistry Chemical Physics, Vol. 21, Issue 22 https://doi.org/10.1039/c9cp01684h	journal	January 2019
Niobium oxide dihalides NbOX ₂ : a new family of two-dimensional van der Waals layered materials with intrinsic ferroelectricity and antiferroelectricity Jia, Yinglu; Zhao, Min; Gou, Gaoyang Nanoscale Horizons, Vol. 4, Issue 5 https://doi.org/10.1039/c9nh00208a	journal	January 2019
Two-dimensional ferromagnetism and driven ferroelectricity in van der Waals CuCrP ₂ S ₆ Lai, Youfang; Song, Zhigang; Wan, Yi Nanoscale, Vol. 11, Issue 12 https://doi.org/10.1039/c9nr00738e	journal	January 2019
Two-dimensional multiferroic semiconductors with coexisting ferroelectricity and ferromagnetism Qi, Jingshan; Wang, Hua; Chen, Xiaofang Applied Physics Letters, Vol. 113, Issue 4 https://doi.org/10.1063/1.5038037	journal	July 2018
The coexistence of ferroelectricity and topological phase transition in monolayer α -In ₂ Se ₃ under strain engineering Jiang, Xingxing; Feng, Yexin; Chen, Ke-Qiu Journal of Physics: Condensed Matter, Vol. 32, Issue 10 https://doi.org/10.1088/1361-648x/ab58f1	journal	December 2019
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Shift-current bulk photovoltaic effect influenced by quasiparticle and exciton Fei, Ruixiang; Tan, Liang Z.; Rappe, Andrew M. Physical Review B, Vol. 101, Issue 4 https://doi.org/10.1103/physrevb.101.045104	journal	January 2020
Photostrictive Two-Dimensional Materials in the Monochalcogenide Family Haleoot, Raad; Paillard, Charles; Kaloni, Thaneshwor P. Physical Review Letters, Vol. 118, Issue 22 https://doi.org/10.1103/PhysRevLett.118.227401	journal	May 2017
Frustrated Dipole Order Induces Noncollinear Proper Ferrielectricity in Two Dimensions Lin, Ling-Fang; Zhang, Yang; Moreo, Adriana Physical Review Letters, Vol. 123, Issue 6 https://doi.org/10.1103/PhysRevLett.123.067601	journal	August 2019
Room temperature in-plane ferroelectricity in van der Waals In ₂ Se ₃ Zheng, Changxi; Yu, Lei; Zhu, Lin Science Advances, Vol. 4, Issue 7 https://doi.org/10.1126/sciadv.aar7720	journal	July 2018
Ferroicity-driven nonlinear photocurrent switching in time-reversal invariant ferroic materials Wang, Hua; Qian, Xiaofeng Science Advances, Vol. 5, Issue 8 https://doi.org/10.1126/sciadv.aav9743	journal	August 2019
Ferroelectric chalcogenides—materials at the edge Kooi, Bart J.; Noheda, Beatriz Science, Vol. 353, Issue 6296 https://doi.org/10.1126/science.aaf9081	journal	July 2016
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement Kooi, Bart J.; Wuttig, Matthias Advanced Materials, Vol. 32, Issue 21 https://doi.org/10.1002/adma.201908302	journal	April 2020
Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation Higashitarumizu, Naoki; Kawamoto, Hayami; Nakamura, Masaru Nanoscale, Vol. 10, Issue 47 https://doi.org/10.1039/c8nr06390g	journal	January 2018
A two-dimensional robust topological insulator with coexisting ferroelectric and valley polarization Hu, Xing-kai; Pang, Zhao-xia; Zhang, Chang-wen Journal of Materials Chemistry C, Vol. 7, Issue 30 https://doi.org/10.1039/c8tc06252h	journal	January 2019
Atomic-scale mapping of interface reconstructions in multiferroic heterostructures Huang, Weichuan; Yin, Yuewei; Li, Xiaoguang Applied Physics Reviews, Vol. 5, Issue 4 https://doi.org/10.1063/1.5053426	journal	December 2018
Emergence of the giant out-of-plane Rashba effect and tunable nanoscale persistent spin helix in ferroelectric SnTe thin films Lee, Hosik; Im, Jino; Jin, Hosub Applied Physics Letters, Vol. 116, Issue 2 https://doi.org/10.1063/1.5137753	journal	January 2020
Giant tunneling electroresistance in two-dimensional ferroelectric tunnel junctions with out-of-plane ferroelectric polarization Kang, Lili; Jiang, Peng; Hao, Hua Physical Review B, Vol. 101, Issue 1 https://doi.org/10.1103/physrevb.101.014105	journal	January 2020
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement Kooi, Bart J.; Wuttig, Matthias RWTH Aachen University https://doi.org/10.18154/rwth-2020-04431	text	January 2020
Elemental Ferroelectricity and Antiferroelectricity in Group-V Monolayer Xiao, Chengcheng; Wang, Fang; Yang, Shengyuan A. Advanced Functional Materials, Vol. 28, Issue 17 https://doi.org/10.1002/adfm.201707383	journal	February 2018
Growth of atomically thick transition metal sulfide filmson graphene/6H-SiC(0001) by molecular beam epitaxy Lin, Haicheng; Huang, Wantong; Zhao, Kun Nano Research, Vol. 11, Issue 9 https://doi.org/10.1007/s12274-018-2054-4	journal	April 2018
Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit Wang, H.; Liu, Z. R.; Yoong, H. Y. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-05662-y	journal	August 2018
In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects Zhao, Siwen; Dong, Baojuan; Wang, Huide Nanoscale Advances, Vol. 2, Issue 1 https://doi.org/10.1039/c9na00623k	journal	January 2020
Quantitative relationship between polarization differences and the zone-averaged shift photocurrent Fregoso, Benjamin M.; Morimoto, Takahiro; Moore, Joel E. arXiv https://doi.org/10.48550/arxiv.1701.00172	text	January 2017
On the origin of magnetic anisotropy in two dimensional CrI$_3$ Lado, J. L.; Fernández-Rossier, J. arXiv https://doi.org/10.48550/arxiv.1704.03849	text	January 2017
Tuning the ferro- to para-electric transition temperature and dipole orientation of group-IV monochalcogenide monolayers Barraza-Lopez, Salvador; Kaloni, Thaneshwor P.; Poudel, Shiva P. arXiv https://doi.org/10.48550/arxiv.1709.04581	text	January 2017
Non-monotonic thickness dependence of Curie temperature and ferroelectricity in Two-dimensional SnTe film Yang, Chao; Liu, Yanyu; Tang, Gang arXiv https://doi.org/10.48550/arxiv.1805.07041	text	January 2018
Strain-induced gauge and Rashba fields in ferroelectric Rashba lead chalcogenide PbX monolayers (X = S, Se, Te) Hanakata, Paul Z.; Rodin, A. S.; Park, Harold S. arXiv https://doi.org/10.48550/arxiv.1806.11056	text	January 2018
Giant spin Hall Effect in two-dimensional monochalcogenides Slawinska, Jagoda; Cerasoli, Frank T.; Wang, Haihang arXiv https://doi.org/10.48550/arxiv.1810.02860	text	January 2018
Frustrated Dipole Order Induces Noncollinear Proper Ferrielectricity in Two Dimensions Lin, Ling-Fang; Zhang, Yang; Moreo, Adriana arXiv https://doi.org/10.48550/arxiv.1907.06259	text	January 2019
Band splitting with vanishing spin polarizations in noncentrosymmetric crystals Liu, Kai; Luo, Wei; Ji, Junyi arXiv https://doi.org/10.48550/arxiv.1909.10365	text	January 2019
Tunable Topological Energy Bands in 2D Dialkali-Metal Monoxides Hua, Chenqiang; Li, Si; Xu, Zhu-An arXiv https://doi.org/10.48550/arxiv.1912.08019	text	January 2019
Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit Wang, H.; Liu, Z. R.; Yoong, H. Y. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-05662-y	journal	August 2018
Prediction of ferroelectricity-driven Berry curvature enabling charge- and spin-controllable photocurrent in tin telluride monolayers Kim, Jeongwoo; Kim, Kyoung-Whan; Shin, Dongbin Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-11964-6	journal	September 2019
Angle-resolved photoemission spectroscopy for the study of two-dimensional materials Mo, Sung-Kwan Nano Convergence, Vol. 4, Issue 1 https://doi.org/10.1186/s40580-017-0100-7	journal	March 2017
Water splits to degrade two-dimensional group-IV monochalcogenides in nanoseconds Barraza-Lopez, Salvador; Kaloni, Thaneshwor P. arXiv https://doi.org/10.48550/arxiv.1810.02841	text	January 2018
Band splitting with vanishing spin polarizations in noncentrosymmetric crystals Liu, Kai; Luo, Wei; Ji, Junyi arXiv https://doi.org/10.48550/arxiv.1909.10365	text	January 2019

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