Atomic layer deposition for membrane interface engineering

Yang, Hao-Cheng; Waldman, Ruben Z.; Chen, Zhaowei; Darling, Seth B.

doi:10.1039/C8NR08114J

Title: Atomic layer deposition for membrane interface engineering

Journal Article · 30 October 2018 · Nanoscale

DOI: https://doi.org/10.1039/C8NR08114J · OSTI ID:1557216

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Sun Yat-Sen Univ., Zhuhai (China)
Univ. of Chicago, IL (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)

In many applications, interfaces govern the performance of membranes. Structure, chemistry, electrostatics, and other properties of interfaces can dominate the selectivity, flux, fouling resistance, and other critical aspects of membrane functionality. Control over membrane interfacial properties, therefore, is a powerful means of tailoring performance. In this minireview, we discuss the application of atomic layer deposition (ALD) and related techniques in the design of novel membrane interfaces. We discuss recent literature in which ALD is used to 1) modify the surface chemistry and interfacial properties of membranes, 2) tailor the pore sizes and separation characteristics of membranes, and 3) enable novel advanced functional membranes.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Advanced Materials for Energy-Water Systems (AMEWS); Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1557216

Alternate ID(s):: OSTI ID: 1481029

Journal Information:: Nanoscale, Vol. 10, Issue 44; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 65 works

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