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Title: Atomic layer deposition for membrane interface engineering

Abstract

In many applications, interfaces govern the performance of membranes. Structure, chemistry, electrostatics, and other properties of interfaces can dominate the selectivity, flux, fouling resistance, and other critical aspects of membrane functionality. Control over membrane interfacial properties, therefore, is a powerful means of tailoring performance. In this minireview, we discuss the application of atomic layer deposition (ALD) and related techniques in the design of novel membrane interfaces. We discuss recent literature in which ALD is used to 1) modify the surface chemistry and interfacial properties of membranes, 2) tailor the pore sizes and separation characteristics of membranes, and 3) enable novel advanced functional membranes.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [2]
  1. Sun Yat-Sen Univ., Zhuhai (China)
  2. Univ. of Chicago, IL (United States)
  3. Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Advanced Materials for Energy-Water Systems (AMEWS); Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1557216
Alternate Identifier(s):
OSTI ID: 1481029
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 10; Journal Issue: 44; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Yang, Hao-Cheng, Waldman, Ruben Z., Chen, Zhaowei, and Darling, Seth B. Atomic layer deposition for membrane interface engineering. United States: N. p., 2018. Web. doi:10.1039/C8NR08114J.
Yang, Hao-Cheng, Waldman, Ruben Z., Chen, Zhaowei, & Darling, Seth B. Atomic layer deposition for membrane interface engineering. United States. doi:10.1039/C8NR08114J.
Yang, Hao-Cheng, Waldman, Ruben Z., Chen, Zhaowei, and Darling, Seth B. Tue . "Atomic layer deposition for membrane interface engineering". United States. doi:10.1039/C8NR08114J. https://www.osti.gov/servlets/purl/1557216.
@article{osti_1557216,
title = {Atomic layer deposition for membrane interface engineering},
author = {Yang, Hao-Cheng and Waldman, Ruben Z. and Chen, Zhaowei and Darling, Seth B.},
abstractNote = {In many applications, interfaces govern the performance of membranes. Structure, chemistry, electrostatics, and other properties of interfaces can dominate the selectivity, flux, fouling resistance, and other critical aspects of membrane functionality. Control over membrane interfacial properties, therefore, is a powerful means of tailoring performance. In this minireview, we discuss the application of atomic layer deposition (ALD) and related techniques in the design of novel membrane interfaces. We discuss recent literature in which ALD is used to 1) modify the surface chemistry and interfacial properties of membranes, 2) tailor the pore sizes and separation characteristics of membranes, and 3) enable novel advanced functional membranes.},
doi = {10.1039/C8NR08114J},
journal = {Nanoscale},
number = 44,
volume = 10,
place = {United States},
year = {2018},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 9 works
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