This content will become publicly available on August 13, 2020
Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures
- Authors:
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
- Department of Electrical and Computer Engineering, University of California, Davis, California 95616, USA
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA, Department of Electrical and Computer Engineering, University of California, Davis, California 95616, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1557029
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 7; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Ji, Dong, Ercan, Burcu, and Chowdhury, Srabanti. Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures. United States: N. p., 2019.
Web. doi:10.1063/1.5099245.
Ji, Dong, Ercan, Burcu, & Chowdhury, Srabanti. Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures. United States. doi:10.1063/1.5099245.
Ji, Dong, Ercan, Burcu, and Chowdhury, Srabanti. Mon .
"Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures". United States. doi:10.1063/1.5099245.
@article{osti_1557029,
title = {Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures},
author = {Ji, Dong and Ercan, Burcu and Chowdhury, Srabanti},
abstractNote = {},
doi = {10.1063/1.5099245},
journal = {Applied Physics Letters},
number = 7,
volume = 115,
place = {United States},
year = {2019},
month = {8}
}
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DOI: 10.1063/1.5099245
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Works referenced in this record:
Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures
journal, December 2018
- Narita, Tetsuo; Tomita, Kazuyoshi; Yamada, Shinji
- Applied Physics Express, Vol. 12, Issue 1
High Voltage Vertical GaN p-n Diodes With Avalanche Capability
journal, October 2013
- Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui
- IEEE Transactions on Electron Devices, Vol. 60, Issue 10
Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm −1
journal, May 2018
- Mandal, S.; Kanathila, M. B.; Pynn, C. D.
- Semiconductor Science and Technology, Vol. 33, Issue 6
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
journal, June 1997
- Oğuzman, Ismail H.; Bellotti, Enrico; Brennan, Kevin F.
- Journal of Applied Physics, Vol. 81, Issue 12
Experimental evaluation of impact ionization coefficients in GaN
journal, December 1999
- Kunihiro, K.; Kasahara, K.; Takahashi, Y.
- IEEE Electron Device Letters, Vol. 20, Issue 12
Power semiconductor device figure of merit for high-frequency applications
journal, October 1989
- Baliga, B. J.
- IEEE Electron Device Letters, Vol. 10, Issue 10
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
journal, November 1997
- Muth, J. F.; Lee, J. H.; Shmagin, I. K.
- Applied Physics Letters, Vol. 71, Issue 18
Activation of buried p-GaN in MOCVD-regrown vertical structures
journal, August 2018
- Li, Wenshen; Nomoto, Kazuki; Lee, Kevin
- Applied Physics Letters, Vol. 113, Issue 6
Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
journal, June 2018
- Cao, Lina; Wang, Jingshan; Harden, Galen
- Applied Physics Letters, Vol. 112, Issue 26
Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices
journal, October 2015
- Niwa, Hiroki; Suda, Jun; Kimoto, Tsunenobu
- IEEE Transactions on Electron Devices, Vol. 62, Issue 10
New Unipolar Switching Power Device Figures of Merit
journal, May 2004
- Huang, A. Q.
- IEEE Electron Device Letters, Vol. 25, Issue 5
Review of Silicon Carbide Power Devices and Their Applications
journal, October 2017
- She, Xu; Huang, Alex Q.; Lucia, Oscar
- IEEE Transactions on Industrial Electronics, Vol. 64, Issue 10
Impact Ionization Coefficients in 4H-SiC
journal, August 2008
- Loh, W. S.; Ng, B. K.; Ng, J. S.
- IEEE Transactions on Electron Devices, Vol. 55, Issue 8
Gallium nitride devices for power electronic applications
journal, June 2013
- Baliga, B. Jayant
- Semiconductor Science and Technology, Vol. 28, Issue 7