Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

Ji, Dong; Ercan, Burcu; Chowdhury, Srabanti

doi:10.1063/1.5099245

Title: Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

Authors:

^[1]; Ercan, Burcu ^[2]; Chowdhury, Srabanti ^[3]

Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Department of Electrical and Computer Engineering, University of California, Davis, California 95616, USA
Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA, Department of Electrical and Computer Engineering, University of California, Davis, California 95616, USA

Publication Date:: 2019-08-12

Sponsoring Org.:: USDOE

OSTI Identifier:: 1557029

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 7; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Ji, Dong, Ercan, Burcu, and Chowdhury, Srabanti. Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5099245.

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                    Ji, Dong, Ercan, Burcu, & Chowdhury, Srabanti. Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures.  United States.  https://doi.org/10.1063/1.5099245

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                    Ji, Dong, Ercan, Burcu, and Chowdhury, Srabanti. Mon .  
"Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures".  United States.  https://doi.org/10.1063/1.5099245.

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@article{osti_1557029,

  title        = {Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures},

  author       = {Ji, Dong and Ercan, Burcu and Chowdhury, Srabanti},

  abstractNote = {},

  doi          = {10.1063/1.5099245},

  journal      = {Applied Physics Letters},

  number       = 7,

  volume       = 115,

  place        = {United States},

  year         = {2019},

  month        = {8}

}

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https://doi.org/10.1063/1.5099245

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Works referenced in this record:

Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures
journal, December 2018

Narita, Tetsuo; Tomita, Kazuyoshi; Yamada, Shinji
Applied Physics Express, Vol. 12, Issue 1
DOI: 10.7567/1882-0786/aaf418

High Voltage Vertical GaN p-n Diodes With Avalanche Capability
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Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui
IEEE Transactions on Electron Devices, Vol. 60, Issue 10
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Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm ⁻¹
journal, May 2018

Mandal, S.; Kanathila, M. B.; Pynn, C. D.
Semiconductor Science and Technology, Vol. 33, Issue 6
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Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
journal, June 1997

Oğuzman, Ismail H.; Bellotti, Enrico; Brennan, Kevin F.
Journal of Applied Physics, Vol. 81, Issue 12
DOI: 10.1063/1.365392

Experimental evaluation of impact ionization coefficients in GaN
journal, December 1999

Kunihiro, K.; Kasahara, K.; Takahashi, Y.
IEEE Electron Device Letters, Vol. 20, Issue 12
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Power semiconductor device figure of merit for high-frequency applications
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Baliga, B. J.
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Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
journal, November 1997

Muth, J. F.; Lee, J. H.; Shmagin, I. K.
Applied Physics Letters, Vol. 71, Issue 18
DOI: 10.1063/1.120191

Activation of buried p-GaN in MOCVD-regrown vertical structures
journal, August 2018

Li, Wenshen; Nomoto, Kazuki; Lee, Kevin
Applied Physics Letters, Vol. 113, Issue 6
DOI: 10.1063/1.5041879

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
journal, June 2018

Cao, Lina; Wang, Jingshan; Harden, Galen
Applied Physics Letters, Vol. 112, Issue 26
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Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices
journal, October 2015

Niwa, Hiroki; Suda, Jun; Kimoto, Tsunenobu
IEEE Transactions on Electron Devices, Vol. 62, Issue 10
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New Unipolar Switching Power Device Figures of Merit
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Huang, A. Q.
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Review of Silicon Carbide Power Devices and Their Applications
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She, Xu; Huang, Alex Q.; Lucia, Oscar
IEEE Transactions on Industrial Electronics, Vol. 64, Issue 10
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Impact Ionization Coefficients in 4H-SiC
journal, August 2008

Loh, W. S.; Ng, B. K.; Ng, J. S.
IEEE Transactions on Electron Devices, Vol. 55, Issue 8
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Gallium nitride devices for power electronic applications
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Baliga, B. Jayant
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The arsenic composition dependences of electron and hole ionization coefficients, ..cap alpha.. and ..beta.., in (100)-oriented Ga /SUB 1-x/ In /SUB x/ As /SUB y/ P /SUB 1-y/ have been derived from photomultiplication measurements made on Ga /SUB 1-x/ In /SUB x/ As /SUB y/ P /SUB 1-y/ /InP diodes with arsenic compositions of 0, 0.28, 0.39, 0.70, and 1.0. It has been found that GaInAsP whose y is in the range of 0 < y less than or equal to 0.7 has definitely smaller ..beta.. values than InP; on the other hand, ..cap alpha.. increases monotonically as y changesmore »« less
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Title: Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

Citation Formats

Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures journal, December 2018

High Voltage Vertical GaN p-n Diodes With Avalanche Capability journal, October 2013

Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm −1 journal, May 2018

Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN journal, June 1997

Experimental evaluation of impact ionization coefficients in GaN journal, December 1999

Power semiconductor device figure of merit for high-frequency applications journal, October 1989

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements journal, November 1997

Activation of buried p-GaN in MOCVD-regrown vertical structures journal, August 2018

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates journal, June 2018

Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices journal, October 2015

New Unipolar Switching Power Device Figures of Merit journal, May 2004

Review of Silicon Carbide Power Devices and Their Applications journal, October 2017

Impact Ionization Coefficients in 4H-SiC journal, August 2008

Gallium nitride devices for power electronic applications journal, June 2013

Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures
journal, December 2018

High Voltage Vertical GaN p-n Diodes With Avalanche Capability
journal, October 2013

Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm ⁻¹
journal, May 2018

Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
journal, June 1997

Experimental evaluation of impact ionization coefficients in GaN
journal, December 1999

Power semiconductor device figure of merit for high-frequency applications
journal, October 1989

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
journal, November 1997

Activation of buried p-GaN in MOCVD-regrown vertical structures
journal, August 2018

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
journal, June 2018

Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices
journal, October 2015

New Unipolar Switching Power Device Figures of Merit
journal, May 2004

Review of Silicon Carbide Power Devices and Their Applications
journal, October 2017

Impact Ionization Coefficients in 4H-SiC
journal, August 2008

Gallium nitride devices for power electronic applications
journal, June 2013