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Title: Depth dependent ferroelectric to incommensurate/commensurate antiferroelectric phase transition in epitaxial lanthanum modified lead zirconate titanate thin films

Abstract

Transmission electron microscopy was used to investigate the coexistence of ferroelectricity (FE) and antiferroelectricity (AFE) in (001) and (011) (Pb0.97, La0.02) (Zr0.95, Ti0.05) O3 (PLZT) epitaxial thin films. The depth resolved selected area electron diffraction (SAED) results revealed that the AFE phase was located in the near interface region, whereas the FE phase was found in the near surface region. A thickness dependent lattice parameter distribution was calculated using the SAED data, and a decrease in the c/a ratio was found to correlate with the transition from AFE to FE stability. Additionally, commensurate and incommensurate modulations in AFE PLZT were identified based on the observation of various superlattice reflections.

Authors:
ORCiD logo; ORCiD logo; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1557016
Grant/Contract Number:  
FG02-06ER46290
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 7; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Gao, Min, Tang, Xiao, Dai, Steve, Li, Jiefang, and Viehland, D. Depth dependent ferroelectric to incommensurate/commensurate antiferroelectric phase transition in epitaxial lanthanum modified lead zirconate titanate thin films. United States: N. p., 2019. Web. doi:10.1063/1.5113720.
Gao, Min, Tang, Xiao, Dai, Steve, Li, Jiefang, & Viehland, D. Depth dependent ferroelectric to incommensurate/commensurate antiferroelectric phase transition in epitaxial lanthanum modified lead zirconate titanate thin films. United States. https://doi.org/10.1063/1.5113720
Gao, Min, Tang, Xiao, Dai, Steve, Li, Jiefang, and Viehland, D. Mon . "Depth dependent ferroelectric to incommensurate/commensurate antiferroelectric phase transition in epitaxial lanthanum modified lead zirconate titanate thin films". United States. https://doi.org/10.1063/1.5113720.
@article{osti_1557016,
title = {Depth dependent ferroelectric to incommensurate/commensurate antiferroelectric phase transition in epitaxial lanthanum modified lead zirconate titanate thin films},
author = {Gao, Min and Tang, Xiao and Dai, Steve and Li, Jiefang and Viehland, D.},
abstractNote = {Transmission electron microscopy was used to investigate the coexistence of ferroelectricity (FE) and antiferroelectricity (AFE) in (001) and (011) (Pb0.97, La0.02) (Zr0.95, Ti0.05) O3 (PLZT) epitaxial thin films. The depth resolved selected area electron diffraction (SAED) results revealed that the AFE phase was located in the near interface region, whereas the FE phase was found in the near surface region. A thickness dependent lattice parameter distribution was calculated using the SAED data, and a decrease in the c/a ratio was found to correlate with the transition from AFE to FE stability. Additionally, commensurate and incommensurate modulations in AFE PLZT were identified based on the observation of various superlattice reflections.},
doi = {10.1063/1.5113720},
journal = {Applied Physics Letters},
number = 7,
volume = 115,
place = {United States},
year = {2019},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.5113720

Citation Metrics:
Cited by: 9 works
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Works referenced in this record:

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