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Title: Gallium arsenide solar cells grown at rates exceeding 300 µm h –1 by hydride vapor phase epitaxy

Abstract

We discuss gallium arsenide (GaAs) growth rates exceeding 300 µm h -1 using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium monochloride conversion efficiency, and by utilizing a mass-transport-limited growth regime with fast kinetics. We also demonstrate gallium indium phosphide growth at rates exceeding 200 µm h -1 using similar growth conditions. We grew GaAs solar cell devices by incorporating the high growth rate of GaAs and evaluated its material quality at these high rates. Solar cell growth rates ranged from 35 to 309 µm h -1 with open circuit voltages ranging from 1.04 to 1.07 V. The best devices exceeded 25% efficiency under the AM1.5 G solar spectrum. The high open-circuit voltages indicate that high material quality can be maintained at these extremely high growth rates. These conclusions have strong implications toward lowering the deposition cost of III-V materials potentially enabling the deposition of high efficiency devices in mere seconds.

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1550787
Report Number(s):
NREL/JA-5900-73096
Journal ID: ISSN 2041-1723
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; electronic devices; solar cells

Citation Formats

Metaferia, Wondwosen, Schulte, Kevin L., Simon, John, Johnston, Steve, and Ptak, Aaron J. Gallium arsenide solar cells grown at rates exceeding 300 µm h–1 by hydride vapor phase epitaxy. United States: N. p., 2019. Web. doi:10.1038/s41467-019-11341-3.
Metaferia, Wondwosen, Schulte, Kevin L., Simon, John, Johnston, Steve, & Ptak, Aaron J. Gallium arsenide solar cells grown at rates exceeding 300 µm h–1 by hydride vapor phase epitaxy. United States. doi:10.1038/s41467-019-11341-3.
Metaferia, Wondwosen, Schulte, Kevin L., Simon, John, Johnston, Steve, and Ptak, Aaron J. Fri . "Gallium arsenide solar cells grown at rates exceeding 300 µm h–1 by hydride vapor phase epitaxy". United States. doi:10.1038/s41467-019-11341-3. https://www.osti.gov/servlets/purl/1550787.
@article{osti_1550787,
title = {Gallium arsenide solar cells grown at rates exceeding 300 µm h–1 by hydride vapor phase epitaxy},
author = {Metaferia, Wondwosen and Schulte, Kevin L. and Simon, John and Johnston, Steve and Ptak, Aaron J.},
abstractNote = {We discuss gallium arsenide (GaAs) growth rates exceeding 300 µm h-1 using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium monochloride conversion efficiency, and by utilizing a mass-transport-limited growth regime with fast kinetics. We also demonstrate gallium indium phosphide growth at rates exceeding 200 µm h-1 using similar growth conditions. We grew GaAs solar cell devices by incorporating the high growth rate of GaAs and evaluated its material quality at these high rates. Solar cell growth rates ranged from 35 to 309 µm h-1 with open circuit voltages ranging from 1.04 to 1.07 V. The best devices exceeded 25% efficiency under the AM1.5 G solar spectrum. The high open-circuit voltages indicate that high material quality can be maintained at these extremely high growth rates. These conclusions have strong implications toward lowering the deposition cost of III-V materials potentially enabling the deposition of high efficiency devices in mere seconds.},
doi = {10.1038/s41467-019-11341-3},
journal = {Nature Communications},
number = 1,
volume = 10,
place = {United States},
year = {2019},
month = {7}
}

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