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Title: Magnetic-Competition-Induced Colossal Magnetoresistance in $n$-Type $$\mathrm{HgCr_2Se_4}$$ Under High Pressure

Abstract

The $n$-type HgCr 2$$\mathrm{Se_4}$$ exhibits a sharp semiconductor-to-metal transition (SMT) in resistivity accompanying the ferromagnetic order at $${T_C}$$ = 106 K. Here, we investigate the effects of pressure and magnetic field on the concomitant SMT and ferromagnetic order by measuring resistivity, dc and ac magnetic susceptibility, as well as single-crystal neutron diffraction under various pressures up to 8 GPa and magnetic fields up to 8 T. Our results demonstrate that the ferromagnetic metallic ground state of $n$-type HgCr 2$$\mathrm{Se_4}$$ is destabilized and gradually replaced by an antiferromagnetic, most likely a spiral magnetic, and insulating ground state upon the application of high pressure. On the other hand, the application of external magnetic fields can restore the ferromagnetic metallic state again at high pressures, resulting in a colossal magnetoresistance (CMR) as high as $$\mathrm{~ 3 × 10^{11}}$$% under 5 T and 2 K at 4 GPa. The present study demonstrates that $n$-type HgCr 2$$\mathrm{Se_4}$$ is located at a peculiar critical point where the balance of competition between ferromagnetic and antiferromagnetic interactions can be easily tipped by external stimuli, providing a new platform for achieving CMR in a single-valent system.

Authors:
ORCiD logo [1];  [2];  [1];  [3];  [4];  [5];  [6];  [6];  [6];  [6]
  1. Chinese Academy of Sciences, Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences
  2. Chinese Academy of Sciences, Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics; Wuhan Univ. of Science and Technology, Wuhan, Hubei (China). Faculty of Science
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Neutron Scattering Division; Duke Univ., Durham, NC (United States). Dept. of Physics
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Neutron Scattering Division
  5. Univ. of Tokyo, Kashiwa, Chiba (Japan). Inst. for Solid State Physics
  6. Chinese Academy of Sciences, Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences; Songshan Lake Materials Lab., Dongguan, Guangdong (China)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1550746
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 123; Journal Issue: 4; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Sun, J. P., Jiao, Y. Y., Yi, C. J., Dissanayake, S. E., Matsuda, M., Uwatoko, Y., Shi, Y. G., Li, Y. Q., Fang, Z., and Cheng, J. -G. Magnetic-Competition-Induced Colossal Magnetoresistance in $n$-Type $\mathrm{HgCr_2Se_4}$ Under High Pressure. United States: N. p., 2019. Web. doi:10.1103/PhysRevLett.123.047201.
Sun, J. P., Jiao, Y. Y., Yi, C. J., Dissanayake, S. E., Matsuda, M., Uwatoko, Y., Shi, Y. G., Li, Y. Q., Fang, Z., & Cheng, J. -G. Magnetic-Competition-Induced Colossal Magnetoresistance in $n$-Type $\mathrm{HgCr_2Se_4}$ Under High Pressure. United States. doi:10.1103/PhysRevLett.123.047201.
Sun, J. P., Jiao, Y. Y., Yi, C. J., Dissanayake, S. E., Matsuda, M., Uwatoko, Y., Shi, Y. G., Li, Y. Q., Fang, Z., and Cheng, J. -G. Mon . "Magnetic-Competition-Induced Colossal Magnetoresistance in $n$-Type $\mathrm{HgCr_2Se_4}$ Under High Pressure". United States. doi:10.1103/PhysRevLett.123.047201.
@article{osti_1550746,
title = {Magnetic-Competition-Induced Colossal Magnetoresistance in $n$-Type $\mathrm{HgCr_2Se_4}$ Under High Pressure},
author = {Sun, J. P. and Jiao, Y. Y. and Yi, C. J. and Dissanayake, S. E. and Matsuda, M. and Uwatoko, Y. and Shi, Y. G. and Li, Y. Q. and Fang, Z. and Cheng, J. -G.},
abstractNote = {The $n$-type HgCr2$\mathrm{Se_4}$ exhibits a sharp semiconductor-to-metal transition (SMT) in resistivity accompanying the ferromagnetic order at ${T_C}$ = 106 K. Here, we investigate the effects of pressure and magnetic field on the concomitant SMT and ferromagnetic order by measuring resistivity, dc and ac magnetic susceptibility, as well as single-crystal neutron diffraction under various pressures up to 8 GPa and magnetic fields up to 8 T. Our results demonstrate that the ferromagnetic metallic ground state of $n$-type HgCr2$\mathrm{Se_4}$ is destabilized and gradually replaced by an antiferromagnetic, most likely a spiral magnetic, and insulating ground state upon the application of high pressure. On the other hand, the application of external magnetic fields can restore the ferromagnetic metallic state again at high pressures, resulting in a colossal magnetoresistance (CMR) as high as $\mathrm{~ 3 × 10^{11}}$% under 5 T and 2 K at 4 GPa. The present study demonstrates that $n$-type HgCr2$\mathrm{Se_4}$ is located at a peculiar critical point where the balance of competition between ferromagnetic and antiferromagnetic interactions can be easily tipped by external stimuli, providing a new platform for achieving CMR in a single-valent system.},
doi = {10.1103/PhysRevLett.123.047201},
journal = {Physical Review Letters},
number = 4,
volume = 123,
place = {United States},
year = {2019},
month = {7}
}

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