Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory

Journal Article · 01 September 2017 · Acta Materialia

DOI: https://doi.org/10.1016/j.actamat.2017.07.006 · OSTI ID:1550420

Wang, Xue-Peng; Li, Xian-Bin; Chen, Nian-Ke; Chen, Qi-Dai; Han, Xiao-Dong; Zhang, Shengbai; Sun, Hong-Bo

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• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: SC0002623
• OSTI ID: 1550420
• Journal Information: Acta Materialia, Journal Name: Acta Materialia Journal Issue: C Vol. 136; ISSN 1359-6454
• Publisher: ElsevierCopyright Statement
• Country of Publication: United States
• Language: English