Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

doi:10.1016/j.jcrysgro.2017.05.030

Title: Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

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Authors:: Zhang, Chaomin; Kim, Yeongho; Faleev, Nikolai N.; Honsberg, Christiana B.

Publication Date:: 2017-10-01

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1550303

Grant/Contract Number:: [EE0006335]

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Crystal Growth

Additional Journal Information:: [Journal Name: Journal of Crystal Growth Journal Volume: 475 Journal Issue: C]; Journal ID: ISSN 0022-0248

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Citation Formats


                    Zhang, Chaomin, Kim, Yeongho, Faleev, Nikolai N., and Honsberg, Christiana B. Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy.  Netherlands: N. p., 2017. 
        Web.  doi:10.1016/j.jcrysgro.2017.05.030.

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                    Zhang, Chaomin, Kim, Yeongho, Faleev, Nikolai N., & Honsberg, Christiana B. Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy.  Netherlands.  doi:10.1016/j.jcrysgro.2017.05.030.

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                    Zhang, Chaomin, Kim, Yeongho, Faleev, Nikolai N., and Honsberg, Christiana B. Sun .  
        "Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy".  Netherlands.  doi:10.1016/j.jcrysgro.2017.05.030.

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@article{osti_1550303,

  title        = {Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy},

  author       = {Zhang, Chaomin and Kim, Yeongho and Faleev, Nikolai N. and Honsberg, Christiana B.},

  abstractNote = {},

  doi          = {10.1016/j.jcrysgro.2017.05.030},

  journal      = {Journal of Crystal Growth},

  number       = [C],

  volume       = [475],

  place        = {Netherlands},

  year         = {2017},

  month        = {10}

}

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DOI: 10.1016/j.jcrysgro.2017.05.030

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