Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

Journal Article · 30 September 2017 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2017.05.030 · OSTI ID:1550303

Zhang, Chaomin; Kim, Yeongho; Faleev, Nikolai N.; Honsberg, Christiana B.

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• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• Grant/Contract Number: EE0006335
• OSTI ID: 1550303
• Alternate ID(s): OSTI ID: 1538439
• Journal Information: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 475; ISSN 0022-0248
• Publisher: ElsevierCopyright Statement
• Country of Publication: Netherlands
• Language: English