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Title: Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1550303
Grant/Contract Number:  
[EE0006335]
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
[Journal Name: Journal of Crystal Growth Journal Volume: 475 Journal Issue: C]; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Zhang, Chaomin, Kim, Yeongho, Faleev, Nikolai N., and Honsberg, Christiana B. Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy. Netherlands: N. p., 2017. Web. doi:10.1016/j.jcrysgro.2017.05.030.
Zhang, Chaomin, Kim, Yeongho, Faleev, Nikolai N., & Honsberg, Christiana B. Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy. Netherlands. doi:10.1016/j.jcrysgro.2017.05.030.
Zhang, Chaomin, Kim, Yeongho, Faleev, Nikolai N., and Honsberg, Christiana B. Sun . "Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy". Netherlands. doi:10.1016/j.jcrysgro.2017.05.030.
@article{osti_1550303,
title = {Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy},
author = {Zhang, Chaomin and Kim, Yeongho and Faleev, Nikolai N. and Honsberg, Christiana B.},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2017.05.030},
journal = {Journal of Crystal Growth},
number = [C],
volume = [475],
place = {Netherlands},
year = {2017},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.jcrysgro.2017.05.030

Citation Metrics:
Cited by: 10 works
Citation information provided by
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