Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1550303
- Grant/Contract Number:
- EE0006335
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Crystal Growth
- Additional Journal Information:
- Journal Name: Journal of Crystal Growth Journal Volume: 475 Journal Issue: C; Journal ID: ISSN 0022-0248
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Zhang, Chaomin, Kim, Yeongho, Faleev, Nikolai N., and Honsberg, Christiana B. Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy. Netherlands: N. p., 2017.
Web. doi:10.1016/j.jcrysgro.2017.05.030.
Zhang, Chaomin, Kim, Yeongho, Faleev, Nikolai N., & Honsberg, Christiana B. Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy. Netherlands. https://doi.org/10.1016/j.jcrysgro.2017.05.030
Zhang, Chaomin, Kim, Yeongho, Faleev, Nikolai N., and Honsberg, Christiana B. Sun .
"Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy". Netherlands. https://doi.org/10.1016/j.jcrysgro.2017.05.030.
@article{osti_1550303,
title = {Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy},
author = {Zhang, Chaomin and Kim, Yeongho and Faleev, Nikolai N. and Honsberg, Christiana B.},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2017.05.030},
journal = {Journal of Crystal Growth},
number = C,
volume = 475,
place = {Netherlands},
year = {2017},
month = {10}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.jcrysgro.2017.05.030
https://doi.org/10.1016/j.jcrysgro.2017.05.030
Other availability
Cited by: 13 works
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