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Title: Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture

Abstract

Here this paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions.

Authors:
 [1];  [2];  [3];  [4];  [4];  [4]; ORCiD logo [5];  [6]
  1. Korea University, Seoul, (Korea, Republic of); University of Florida, Gainesville, FL (United States)
  2. SK Hynix, Icheon (Korea, Republic of)
  3. Korea Institute of Science and Technology, Seoul (Korea, Republic of)
  4. University of Florida, Gainesville, FL (United States)
  5. Korea University, Seoul, (Korea, Republic of)
  6. Sinmat, Inc., Gainesville, FL (United States)
Publication Date:
Research Org.:
Sinmat, Inc., Gainesville, FL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1538794
Alternate Identifier(s):
OSTI ID: 1549784
Grant/Contract Number:  
SC0006438; SC0007740; SC000-6438; SC000-7740
Resource Type:
Accepted Manuscript
Journal Name:
Scripta Materialia
Additional Journal Information:
Journal Volume: 142; Journal Issue: C; Journal ID: ISSN 1359-6462
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; GaN on diamond; spark plasma sintering; direct bonding; heat dissipation; immiscibility between Ga and C

Citation Formats

Kim, Jong Cheol, Lee, Jinhyung, Kim, Jongsik, Singh, Rajiv K., Jawali, Puneet, Subhash, Ghatu, Lee, Haigun, and Arjunan, Arul Chakkaravarthi. Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture. United States: N. p., 2017. Web. doi:10.1016/j.scriptamat.2017.08.041.
Kim, Jong Cheol, Lee, Jinhyung, Kim, Jongsik, Singh, Rajiv K., Jawali, Puneet, Subhash, Ghatu, Lee, Haigun, & Arjunan, Arul Chakkaravarthi. Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture. United States. https://doi.org/10.1016/j.scriptamat.2017.08.041
Kim, Jong Cheol, Lee, Jinhyung, Kim, Jongsik, Singh, Rajiv K., Jawali, Puneet, Subhash, Ghatu, Lee, Haigun, and Arjunan, Arul Chakkaravarthi. Fri . "Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture". United States. https://doi.org/10.1016/j.scriptamat.2017.08.041. https://www.osti.gov/servlets/purl/1538794.
@article{osti_1538794,
title = {Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture},
author = {Kim, Jong Cheol and Lee, Jinhyung and Kim, Jongsik and Singh, Rajiv K. and Jawali, Puneet and Subhash, Ghatu and Lee, Haigun and Arjunan, Arul Chakkaravarthi},
abstractNote = {Here this paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions.},
doi = {10.1016/j.scriptamat.2017.08.041},
journal = {Scripta Materialia},
number = C,
volume = 142,
place = {United States},
year = {Fri Sep 01 00:00:00 EDT 2017},
month = {Fri Sep 01 00:00:00 EDT 2017}
}

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Cited by: 13 works
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