Gallium nitride grown by molecular beam epitaxy at low temperatures
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1549638
- Grant/Contract Number:
- EE0006335
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Thin Solid Films
- Additional Journal Information:
- Journal Name: Thin Solid Films Journal Volume: 642 Journal Issue: C; Journal ID: ISSN 0040-6090
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Jeffries, A. M., Ding, L., Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Honsberg, C. B., and Bertoni, M. I.. Gallium nitride grown by molecular beam epitaxy at low temperatures. Netherlands: N. p., 2017.
Web. doi:10.1016/j.tsf.2017.07.066.
Jeffries, A. M., Ding, L., Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Honsberg, C. B., & Bertoni, M. I.. Gallium nitride grown by molecular beam epitaxy at low temperatures. Netherlands. https://doi.org/10.1016/j.tsf.2017.07.066
Jeffries, A. M., Ding, L., Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Honsberg, C. B., and Bertoni, M. I.. Wed .
"Gallium nitride grown by molecular beam epitaxy at low temperatures". Netherlands. https://doi.org/10.1016/j.tsf.2017.07.066.
@article{osti_1549638,
title = {Gallium nitride grown by molecular beam epitaxy at low temperatures},
author = {Jeffries, A. M. and Ding, L. and Williams, J. J. and Williamson, T. L. and Hoffbauer, M. A. and Honsberg, C. B. and Bertoni, M. I.},
abstractNote = {},
doi = {10.1016/j.tsf.2017.07.066},
journal = {Thin Solid Films},
number = C,
volume = 642,
place = {Netherlands},
year = {2017},
month = {11}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.tsf.2017.07.066
https://doi.org/10.1016/j.tsf.2017.07.066
Other availability
Cited by: 12 works
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