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Title: Gallium nitride grown by molecular beam epitaxy at low temperatures

Authors:
; ; ; ; ; ; ORCiD logo
Publication Date:
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1549638
Grant/Contract Number:  
EE0006335
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Thin Solid Films
Additional Journal Information:
Journal Name: Thin Solid Films Journal Volume: 642 Journal Issue: C; Journal ID: ISSN 0040-6090
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Jeffries, A. M., Ding, L., Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Honsberg, C. B., and Bertoni, M. I. Gallium nitride grown by molecular beam epitaxy at low temperatures. Netherlands: N. p., 2017. Web. doi:10.1016/j.tsf.2017.07.066.
Jeffries, A. M., Ding, L., Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Honsberg, C. B., & Bertoni, M. I. Gallium nitride grown by molecular beam epitaxy at low temperatures. Netherlands. doi:10.1016/j.tsf.2017.07.066.
Jeffries, A. M., Ding, L., Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Honsberg, C. B., and Bertoni, M. I. Wed . "Gallium nitride grown by molecular beam epitaxy at low temperatures". Netherlands. doi:10.1016/j.tsf.2017.07.066.
@article{osti_1549638,
title = {Gallium nitride grown by molecular beam epitaxy at low temperatures},
author = {Jeffries, A. M. and Ding, L. and Williams, J. J. and Williamson, T. L. and Hoffbauer, M. A. and Honsberg, C. B. and Bertoni, M. I.},
abstractNote = {},
doi = {10.1016/j.tsf.2017.07.066},
journal = {Thin Solid Films},
number = C,
volume = 642,
place = {Netherlands},
year = {2017},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.tsf.2017.07.066

Citation Metrics:
Cited by: 4 works
Citation information provided by
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