Analysis of current-driven oscillatory dynamics of single-layer homoepitaxial islands on crystalline conducting substrates

Dasgupta, Dwaipayan; Kumar, Ashish; Maroudas, Dimitrios

doi:10.1016/j.susc.2017.10.027

Title: Analysis of current-driven oscillatory dynamics of single-layer homoepitaxial islands on crystalline conducting substrates

Full Record
Other Related Research

Authors:: Dasgupta, Dwaipayan; Kumar, Ashish; Maroudas, Dimitrios

Publication Date:: 2018-03-01

Sponsoring Org.:: USDOE

OSTI Identifier:: 1549503

Grant/Contract Number:: FG02-07ER46407

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Surface Science

Additional Journal Information:: Journal Name: Surface Science Journal Volume: 669 Journal Issue: C; Journal ID: ISSN 0039-6028

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Citation Formats


                    Dasgupta, Dwaipayan, Kumar, Ashish, and Maroudas, Dimitrios. Analysis of current-driven oscillatory dynamics of single-layer homoepitaxial islands on crystalline conducting substrates.  Netherlands: N. p., 2018. 
Web.  doi:10.1016/j.susc.2017.10.027.

Copy to clipboard


                    Dasgupta, Dwaipayan, Kumar, Ashish, & Maroudas, Dimitrios. Analysis of current-driven oscillatory dynamics of single-layer homoepitaxial islands on crystalline conducting substrates.  Netherlands.  https://doi.org/10.1016/j.susc.2017.10.027

Copy to clipboard


                    Dasgupta, Dwaipayan, Kumar, Ashish, and Maroudas, Dimitrios. Thu .  
"Analysis of current-driven oscillatory dynamics of single-layer homoepitaxial islands on crystalline conducting substrates".  Netherlands.  https://doi.org/10.1016/j.susc.2017.10.027.

Copy to clipboard


                    
@article{osti_1549503,

  title        = {Analysis of current-driven oscillatory dynamics of single-layer homoepitaxial islands on crystalline conducting substrates},

  author       = {Dasgupta, Dwaipayan and Kumar, Ashish and Maroudas, Dimitrios},

  abstractNote = {},

  doi          = {10.1016/j.susc.2017.10.027},

  journal      = {Surface Science},

  number       = C,

  volume       = 669,

  place        = {Netherlands},

  year         = {2018},

  month        = {3}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1016/j.susc.2017.10.027

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 12 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Analysis of current-driven oscillatory dynamics of single-layer homoepitaxial islands on crystalline conducting substrates

Journal Article Dasgupta, Dwaipayan ; Kumar, Ashish ; Maroudas, Dimitrios - Surface Science

Not provided.
https://doi.org/10.1016/j.susc.2017.10.027
Complex Pattern Formation from Current-Driven Dynamics of Single-Layer Homoepitaxial Islands on Crystalline Conducting Substrates

Journal Article Kumar, Ashish ; Dasgupta, Dwaipayan ; Maroudas, Dimitrios - Physical Review Applied

In this work, we report a systematic study of complex pattern formation resulting from the driven dynamics of single-layer homoepitaxial islands on surfaces of face-centered-cubic (fcc) crystalline conducting substrates under the action of an externally applied electric field. The analysis is based on an experimentally validated nonlinear model of mass transport via island edge atomic diffusion, which also accounts for edge diffusional anisotropy. We analyze the morphological stability and simulate the field-driven evolution of rounded islands for an electric field oriented along the fast edge diffusion direction. For larger-than-critical island sizes on {110} and {100} fcc substrates, we show thatmore »« less
Cited by 8
https://doi.org/10.1103/physrevapplied.8.014035

Full Text Available
Current-driven nanowire formation on surfaces of crystalline conducting substrates

Journal Article Kumar, Ashish ; Dasgupta, Dwaipayan ; Dimitrakopoulos, Christos ; ... - Applied Physics Letters

The formation and precise manipulation of nanoscale features by controlling macroscopic forces is essential to advancing nanotechnology. Toward this end, we report here a theoretical study on formation of nanowires with precisely controlled widths, starting from single-layer conducting islands on crystalline conducting substrates under the controlled action of macroscopic forcing provided by an externally applied electric field that drives island edge electromigration. Numerical simulations based on an experimentally validated model and supported by linear stability theory show that large-size islands undergo a current-induced fingering instability, leading to nanowire formation after finger growth. Depending on the substrate surface crystallographic orientation, neckingmore »« less
Cited by 14
https://doi.org/10.1063/1.4949333

Full Text Available
Surface nanopattern formation due to current-induced homoepitaxial nanowire edge instability

Journal Article Kumar, Ashish ; Dasgupta, Dwaipayan ; Maroudas, Dimitrios - Applied Physics Letters

Physical nanopatterning based on a precise control of macroscopic forcing is an essential tool of nanoscale science and technology. Using an externally applied electric field as the macroscopic force, we report here a computational study on the formation of surface nanopatterns consisting of single-layer homoepitaxial islands as a result of a morphological instability that can occur under edge electromigration conditions on the straight edge of a single-layer nanowire grown epitaxially on a crystalline substrate. Direct dynamical simulations based on a model that has been validated experimentally for the Ag/Ag system show that the current-induced nanowire edge instability causes the breakupmore »« less
Cited by 6
https://doi.org/10.1063/1.4962730

Full Text Available
Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

Journal Article Sakaike, Kohei ; Akazawa, Muneki ; Nakamura, Shogo ; ... - Applied Physics Letters

A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobilitymore »« less
https://doi.org/10.1063/1.4837696

Similar Records