DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy

Authors:
; ; ; ; ; ORCiD logo
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1549452
Grant/Contract Number:  
SC0002623
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Name: Acta Materialia Journal Volume: 143 Journal Issue: C; Journal ID: ISSN 1359-6454
Publisher:
Elsevier
Country of Publication:
United States
Language:
English

Citation Formats

Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Tian, Wei Quan, Zhang, Shengbai, and Sun, Hong-Bo. Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy. United States: N. p., 2018. Web. doi:10.1016/j.actamat.2017.10.013.
Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Tian, Wei Quan, Zhang, Shengbai, & Sun, Hong-Bo. Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy. United States. https://doi.org/10.1016/j.actamat.2017.10.013
Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Tian, Wei Quan, Zhang, Shengbai, and Sun, Hong-Bo. Mon . "Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy". United States. https://doi.org/10.1016/j.actamat.2017.10.013.
@article{osti_1549452,
title = {Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy},
author = {Chen, Nian-Ke and Li, Xian-Bin and Wang, Xue-Peng and Tian, Wei Quan and Zhang, Shengbai and Sun, Hong-Bo},
abstractNote = {},
doi = {10.1016/j.actamat.2017.10.013},
journal = {Acta Materialia},
number = C,
volume = 143,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2018},
month = {Mon Jan 01 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.actamat.2017.10.013

Citation Metrics:
Cited by: 21 works
Citation information provided by
Web of Science

Save / Share: