The electrical properties and distribution of indium in germanium crystals
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1549079
- Grant/Contract Number:
- FG02-10ER46709; SC0004768
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Materials Science in Semiconductor Processing
- Additional Journal Information:
- Journal Name: Materials Science in Semiconductor Processing Journal Volume: 74 Journal Issue: C; Journal ID: ISSN 1369-8001
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, and Yang, Gang. The electrical properties and distribution of indium in germanium crystals. Netherlands: N. p., 2018.
Web. doi:10.1016/j.mssp.2017.11.004.
Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, & Yang, Gang. The electrical properties and distribution of indium in germanium crystals. Netherlands. https://doi.org/10.1016/j.mssp.2017.11.004
Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, and Yang, Gang. Thu .
"The electrical properties and distribution of indium in germanium crystals". Netherlands. https://doi.org/10.1016/j.mssp.2017.11.004.
@article{osti_1549079,
title = {The electrical properties and distribution of indium in germanium crystals},
author = {Wang, Guojian and Mei, Hao and Meng, Xianghua and Mei, Dongming and Yang, Gang},
abstractNote = {},
doi = {10.1016/j.mssp.2017.11.004},
journal = {Materials Science in Semiconductor Processing},
number = C,
volume = 74,
place = {Netherlands},
year = {2018},
month = {2}
}
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https://doi.org/10.1016/j.mssp.2017.11.004
https://doi.org/10.1016/j.mssp.2017.11.004
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Works referenced in this record:
Dislocation density control in high-purity germanium crystal growth
journal, May 2014
- Wang, Guojian; Guan, Yutong; Mei, Hao
- Journal of Crystal Growth, Vol. 393
Electrical Properties of Germanium Semiconductors at Low Temperatures
journal, July 1955
- Fritzsche, H.
- Physical Review, Vol. 99, Issue 2
Vacancy–indium clusters in implanted germanium
journal, April 2010
- Chroneos, A.; Kube, R.; Bracht, H.
- Chemical Physics Letters, Vol. 490, Issue 1-3
Theoretical calculation of distribution coefficients of impurities in germanium and silicon, heats of solid solution
journal, November 1958
- Weiser, Kurt
- Journal of Physics and Chemistry of Solids, Vol. 7, Issue 2-3
Crystal-melt interface shape of Czochralski-grown large diameter germanium crystals
journal, January 1990
- Roth, M.; Azoulay, M.; Gafni, G.
- Journal of Crystal Growth, Vol. 99, Issue 1-4
High-purity germanium crystal growing
journal, July 1971
- Hansen, W. L.
- Nuclear Instruments and Methods, Vol. 94, Issue 2
Intrinsic and extrinsic diffusion of indium in germanium
journal, September 2009
- Kube, R.; Bracht, H.; Chroneos, A.
- Journal of Applied Physics, Vol. 106, Issue 6
High-Purity Germanium Crystal Growing
journal, January 1982
- Hansen, W. L.; Haller, E. E.
- MRS Proceedings, Vol. 16
Analysis of Lattice and Ionized Impurity Scattering in -Type Germanium
journal, September 1962
- Brown, Dale Marius; Bray, Ralph
- Physical Review, Vol. 127, Issue 5
Vacancy-mediated dopant diffusion activation enthalpies for germanium
journal, April 2008
- Chroneos, A.; Bracht, H.; Grimes, R. W.
- Applied Physics Letters, Vol. 92, Issue 17
Micro-Raman depth analysis of residual stress in machined germanium
journal, July 1991
- Sparks, R. G.; Enloe, W. S.; Paesler, M. A.
- Precision Engineering, Vol. 13, Issue 3
A View of the Present Status and Future Prospecis of High Purity Germanium
journal, January 1974
- Hansen, William L.; Haller, Eugene E.
- IEEE Transactions on Nuclear Science, Vol. 21, Issue 1
Raman Scattering by Silicon and Germanium
journal, March 1967
- Parker, J. H.; Feldman, D. W.; Ashkin, M.
- Physical Review, Vol. 155, Issue 3
Zone Refining High-Purity Germanium
journal, February 1978
- Hubbard, G. S.; Haller, E. E.; Hansen, W. L.
- IEEE Transactions on Nuclear Science, Vol. 25, Issue 1
Electrical and structural properties of In-implanted Si 1−x Ge x alloys
journal, January 2016
- Feng, R.; Kremer, F.; Sprouster, D. J.
- Journal of Applied Physics, Vol. 119, Issue 2
Impurity Conduction in Transmutation-Doped -Type Germanium
journal, August 1960
- Fritzsche, H.; Cuevas, M.
- Physical Review, Vol. 119, Issue 4
Temperature dependence of the photothermal conductivity of high-purity germanium containing very low concentrations of Al, B, and P
journal, October 1979
- Jongbloets, H. W. H. M.; Stoelinga, J. H. M.; van de Steeg, M. J. H.
- Physical Review B, Vol. 20, Issue 8
Investigation of influential factors on the purification of zone-refined germanium ingot: Investigation of influential factors on the purification of zone-refined germanium ingot
journal, March 2014
- Yang, Gang; Govani, Jayesh; Mei, Hao
- Crystal Research and Technology, Vol. 49, Issue 4
Electron scattering by ionized impurities in semiconductors
journal, October 1981
- Chattopadhyay, D.; Queisser, H. J.
- Reviews of Modern Physics, Vol. 53, Issue 4
A method for raising the accuracy of frequency measurement
journal, October 1993
- Savin, S. K.
- Measurement Techniques, Vol. 36, Issue 10
Solid Solubilities of Impurity Elements in Germanium and Silicon*
journal, January 1960
- Trumbore, F. A.
- Bell System Technical Journal, Vol. 39, Issue 1
High purity germanium crystal growth at the University of South Dakota
journal, May 2015
- Wang, Guojian; Mei, Hao; Mei, Dongming
- Journal of Physics: Conference Series, Vol. 606
Electrical Properties of -Type Germanium
journal, February 1954
- Debye, P. P.; Conwell, E. M.
- Physical Review, Vol. 93, Issue 4
Development of large size high-purity germanium crystal growth
journal, August 2012
- Wang, Guojian; Sun, Yongchen; Yang, Gang
- Journal of Crystal Growth, Vol. 352, Issue 1, p. 27-30
Lattice-Scattering Mobility in Germanium
journal, January 1954
- Morin, F. J.
- Physical Review, Vol. 93, Issue 1
The impact of neutral impurity concentration on charge drift mobility in p-type germanium
journal, December 2016
- Mei, H.; Mei, D. -M.; Wang, G. -J.
- Journal of Instrumentation, Vol. 11, Issue 12
Micro-Raman analysis of stress in machined silicon and germanium
journal, October 1988
- Sparks, R. G.; Paesler, M. A.
- Precision Engineering, Vol. 10, Issue 4
The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals
journal, September 2014
- Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.
- Journal of Crystal Growth, Vol. 401
Segregation of Impurities During the Growth of Germanium and Silicon
journal, August 1953
- Hall, R. N.
- The Journal of Physical Chemistry, Vol. 57, Issue 8
Impurity conduction in indium-doped germanium
journal, May 1959
- Blakemore, J. S.
- Philosophical Magazine, Vol. 4, Issue 41
Crystal growth and detector performance of large size High-purity Ge crystals
journal, November 2015
- Wang, Guojian; Amman, Mark; Mei, Hao
- Materials Science in Semiconductor Processing, Vol. 39
Impurity Band Conduction in Germanium and Silicon
journal, July 1956
- Conwell, Esther M.
- Physical Review, Vol. 103, Issue 1
Properties of Silicon and Germanium
journal, November 1952
- Conwell, Esther
- Proceedings of the IRE, Vol. 40, Issue 11