The electrical properties and distribution of indium in germanium crystals
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1549079
- Grant/Contract Number:
- FG02-10ER46709; SC0004768
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Materials Science in Semiconductor Processing
- Additional Journal Information:
- Journal Name: Materials Science in Semiconductor Processing Journal Volume: 74 Journal Issue: C; Journal ID: ISSN 1369-8001
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, and Yang, Gang. The electrical properties and distribution of indium in germanium crystals. Netherlands: N. p., 2018.
Web. doi:10.1016/j.mssp.2017.11.004.
Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, & Yang, Gang. The electrical properties and distribution of indium in germanium crystals. Netherlands. doi:10.1016/j.mssp.2017.11.004.
Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, and Yang, Gang. Thu .
"The electrical properties and distribution of indium in germanium crystals". Netherlands. doi:10.1016/j.mssp.2017.11.004.
@article{osti_1549079,
title = {The electrical properties and distribution of indium in germanium crystals},
author = {Wang, Guojian and Mei, Hao and Meng, Xianghua and Mei, Dongming and Yang, Gang},
abstractNote = {},
doi = {10.1016/j.mssp.2017.11.004},
journal = {Materials Science in Semiconductor Processing},
number = C,
volume = 74,
place = {Netherlands},
year = {2018},
month = {2}
}
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.mssp.2017.11.004
DOI: 10.1016/j.mssp.2017.11.004
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Cited by: 1 work
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