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Title: The electrical properties and distribution of indium in germanium crystals

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1549079
Grant/Contract Number:  
FG02-10ER46709; SC0004768
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Materials Science in Semiconductor Processing
Additional Journal Information:
Journal Name: Materials Science in Semiconductor Processing Journal Volume: 74 Journal Issue: C; Journal ID: ISSN 1369-8001
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, and Yang, Gang. The electrical properties and distribution of indium in germanium crystals. Netherlands: N. p., 2018. Web. doi:10.1016/j.mssp.2017.11.004.
Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, & Yang, Gang. The electrical properties and distribution of indium in germanium crystals. Netherlands. doi:10.1016/j.mssp.2017.11.004.
Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, and Yang, Gang. Thu . "The electrical properties and distribution of indium in germanium crystals". Netherlands. doi:10.1016/j.mssp.2017.11.004.
@article{osti_1549079,
title = {The electrical properties and distribution of indium in germanium crystals},
author = {Wang, Guojian and Mei, Hao and Meng, Xianghua and Mei, Dongming and Yang, Gang},
abstractNote = {},
doi = {10.1016/j.mssp.2017.11.004},
journal = {Materials Science in Semiconductor Processing},
number = C,
volume = 74,
place = {Netherlands},
year = {2018},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.mssp.2017.11.004

Citation Metrics:
Cited by: 1 work
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