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Title: Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1549064
Grant/Contract Number:  
DESC0015252
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Vacuum
Additional Journal Information:
Journal Name: Vacuum Journal Volume: 148 Journal Issue: C; Journal ID: ISSN 0042-207X
Publisher:
Elsevier
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Ekinci, Huseyin, Kuryatkov, Vladimir V., Forgey, Chris, Dabiran, Amir, Jorgenson, Robert, and Nikishin, Sergey A. Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas. United Kingdom: N. p., 2018. Web. doi:10.1016/j.vacuum.2017.11.014.
Ekinci, Huseyin, Kuryatkov, Vladimir V., Forgey, Chris, Dabiran, Amir, Jorgenson, Robert, & Nikishin, Sergey A. Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas. United Kingdom. doi:10.1016/j.vacuum.2017.11.014.
Ekinci, Huseyin, Kuryatkov, Vladimir V., Forgey, Chris, Dabiran, Amir, Jorgenson, Robert, and Nikishin, Sergey A. Thu . "Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas". United Kingdom. doi:10.1016/j.vacuum.2017.11.014.
@article{osti_1549064,
title = {Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas},
author = {Ekinci, Huseyin and Kuryatkov, Vladimir V. and Forgey, Chris and Dabiran, Amir and Jorgenson, Robert and Nikishin, Sergey A.},
abstractNote = {},
doi = {10.1016/j.vacuum.2017.11.014},
journal = {Vacuum},
number = C,
volume = 148,
place = {United Kingdom},
year = {2018},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.vacuum.2017.11.014

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Cited by: 1 work
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