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Title: In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1548717
Grant/Contract Number:  
SC0014034
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Intermetallics
Additional Journal Information:
Journal Name: Intermetallics Journal Volume: 94 Journal Issue: C; Journal ID: ISSN 0966-9795
Publisher:
Elsevier
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Gordin, Ari S., and Sandhage, Kenneth H. In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates. United Kingdom: N. p., 2018. Web. doi:10.1016/j.intermet.2018.01.003.
Gordin, Ari S., & Sandhage, Kenneth H. In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates. United Kingdom. doi:10.1016/j.intermet.2018.01.003.
Gordin, Ari S., and Sandhage, Kenneth H. Thu . "In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates". United Kingdom. doi:10.1016/j.intermet.2018.01.003.
@article{osti_1548717,
title = {In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates},
author = {Gordin, Ari S. and Sandhage, Kenneth H.},
abstractNote = {},
doi = {10.1016/j.intermet.2018.01.003},
journal = {Intermetallics},
number = C,
volume = 94,
place = {United Kingdom},
year = {2018},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.intermet.2018.01.003

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