In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1548717
- Grant/Contract Number:
- SC0014034
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Intermetallics
- Additional Journal Information:
- Journal Name: Intermetallics Journal Volume: 94 Journal Issue: C; Journal ID: ISSN 0966-9795
- Publisher:
- Elsevier
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Gordin, Ari S., and Sandhage, Kenneth H. In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates. United Kingdom: N. p., 2018.
Web. doi:10.1016/j.intermet.2018.01.003.
Gordin, Ari S., & Sandhage, Kenneth H. In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates. United Kingdom. https://doi.org/10.1016/j.intermet.2018.01.003
Gordin, Ari S., and Sandhage, Kenneth H. Thu .
"In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates". United Kingdom. https://doi.org/10.1016/j.intermet.2018.01.003.
@article{osti_1548717,
title = {In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates},
author = {Gordin, Ari S. and Sandhage, Kenneth H.},
abstractNote = {},
doi = {10.1016/j.intermet.2018.01.003},
journal = {Intermetallics},
number = C,
volume = 94,
place = {United Kingdom},
year = {2018},
month = {3}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.intermet.2018.01.003
https://doi.org/10.1016/j.intermet.2018.01.003
Other availability
Cited by: 4 works
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