Intrinsic shape of free carrier absorption spectra in 4H-SiC

Grivickas, P.; Redeckas, K.; Gulbinas, K.; Conway, A. M.; Voss, L. F.; Bora, M.; Sampayan, S.; Vengris, M.; Grivickas, V.

doi:10.1063/1.5095161

Title: Intrinsic shape of free carrier absorption spectra in 4H-SiC

Abstract

Free carrier absorption spectra are measured along the different polarization directions with respect to the c-axis of 4H-SiC using ultrafast differential transmission spectroscopy. Probing of excited carrier spectra in an undoped material reveals intrinsic resonances within the conduction band. Widths of the detected resonance peaks are shown to be wider than their theoretical estimates and more comparable to the ones observed in a low doped material. Relative strength of the peaks, on the other hand, is shown to be nearly excitation independent in contrast to the doping induced absorption weakening for the same transitions in n-type samples. Finally, free carrier cross sections are extracted from the excitation dependency of the detected spectra and linked to the individual electron and hole contributions in the near infrared range.

Authors:

^[1]; Redeckas, K. ^[2]; Gulbinas, K. ^[2]; Conway, A. M. ^[1]; Voss, L. F. ^[1]; Bora, M. ^[1]; Sampayan, S. ^[1]; Vengris, M. ^[2];

^[2]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Vilnius Univ., Vilnius (Lithuania)

Publication Date:: Fri Jun 14 00:00:00 EDT 2019

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1548396

Alternate Identifier(s):: OSTI ID: 1525494

Report Number(s):: LLNL-JRNL-761383
Journal ID: ISSN 0021-8979; 949302

Grant/Contract Number:: AC52-07NA27344; 17-ERD-050

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 125; Journal Issue: 22; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats


                    Grivickas, P., Redeckas, K., Gulbinas, K., Conway, A. M., Voss, L. F., Bora, M., Sampayan, S., Vengris, M., and Grivickas, V. Intrinsic shape of free carrier absorption spectra in 4H-SiC.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5095161.

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                    Grivickas, P., Redeckas, K., Gulbinas, K., Conway, A. M., Voss, L. F., Bora, M., Sampayan, S., Vengris, M., & Grivickas, V. Intrinsic shape of free carrier absorption spectra in 4H-SiC.  United States.  https://doi.org/10.1063/1.5095161

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                    Grivickas, P., Redeckas, K., Gulbinas, K., Conway, A. M., Voss, L. F., Bora, M., Sampayan, S., Vengris, M., and Grivickas, V. Fri .  
"Intrinsic shape of free carrier absorption spectra in 4H-SiC".  United States.  https://doi.org/10.1063/1.5095161.  https://www.osti.gov/servlets/purl/1548396.

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@article{osti_1548396,

  title        = {Intrinsic shape of free carrier absorption spectra in 4H-SiC},

  author       = {Grivickas, P. and Redeckas, K. and Gulbinas, K. and Conway, A. M. and Voss, L. F. and Bora, M. and Sampayan, S. and Vengris, M. and Grivickas, V.},

  abstractNote = {Free carrier absorption spectra are measured along the different polarization directions with respect to the c-axis of 4H-SiC using ultrafast differential transmission spectroscopy. Probing of excited carrier spectra in an undoped material reveals intrinsic resonances within the conduction band. Widths of the detected resonance peaks are shown to be wider than their theoretical estimates and more comparable to the ones observed in a low doped material. Relative strength of the peaks, on the other hand, is shown to be nearly excitation independent in contrast to the doping induced absorption weakening for the same transitions in n-type samples. Finally, free carrier cross sections are extracted from the excitation dependency of the detected spectra and linked to the individual electron and hole contributions in the near infrared range.},

  doi          = {10.1063/1.5095161},

  journal      = {Journal of Applied Physics},

  number       = 22,

  volume       = 125,

  place        = {United States},

  year         = {Fri Jun 14 00:00:00 EDT 2019},

  month        = {Fri Jun 14 00:00:00 EDT 2019}

}

Copy to clipboard

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Title: Intrinsic shape of free carrier absorption spectra in 4H-SiC

Abstract

Citation Formats

Temperature Dependence of the Absorption Coefficient in 4H- and 6H-Silicon Carbide at 355 nm Laser Pumping Wavelength journal, June 2002

Theory of Free-Carrier Infrared Absorption in GaAs journal, August 1986

Proof-of-concept framework to separate recombination processes in thin silicon wafers using transient free-carrier absorption spectroscopy journal, March 2015

New Evidence for the Second Conduction Band in 4H SiC journal, May 2017

Temperature- and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC journal, June 2013

Near-infrared free carrier absorption in heavily doped silicon journal, August 2014

Free-carrier absorption in n -type semiconductors: The inelastic scattering of electrons from ionized impurities journal, November 1978

Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC journal, July 2001

Calculated and measured reflectivity of some p -type SiC polytypes journal, April 2002

Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC journal, May 2000

Parameterization of Free Carrier Absorption in Highly Doped Silicon for Solar Cells journal, July 2013

The optical absorption bands and their anisotropy in the various modifications of SiC journal, October 1965

Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection journal, May 2000

Excitation and temperature dependent exciton-carrier transport in CVD diamond: Diffusion coefficient, recombination lifetime and diffusion length journal, April 2017

Optical-absorption bands in the 1–3 eV range in n -type SiC polytypes journal, May 1999

New contactless method for carrier diffusion measurements in silicon with a high precision journal, July 1991

Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques journal, January 2018

Quantum theory of free carrier absorption in polar semiconductors journal, October 1973

Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition journal, November 1995

Auger recombination in 4H-SiC: Unusual temperature behavior journal, December 1997

Free carrier absorption and lifetime mapping in 4H SiC epilayers journal, April 1997

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN journal, January 2012

Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC journal, September 2003

Carrier dynamics and photoelectrical parameters in highly compensated sublimation grown 3C-SiC layers studied by time-resolved nonlinear optical techniques journal, December 2013

Determination of charge carrier concentration in n - and p -doped SiC based on optical absorption measurements journal, January 2002

Dynamics of free carrier absorption in InN layers journal, October 2009

Free carrier absorption in heavily doped silicon layers journal, March 2004

Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence journal, July 1998

Time-resolved measurement of free carrier absorption, diffusivity, and internal quantum efficiency in silicon journal, August 2013

Temperature Dependence of the Absorption Coefficient in 4H- and 6H-Silicon Carbide at 355 nm Laser Pumping Wavelength
journal, June 2002

Theory of Free-Carrier Infrared Absorption in GaAs
journal, August 1986

Proof-of-concept framework to separate recombination processes in thin silicon wafers using transient free-carrier absorption spectroscopy
journal, March 2015

New Evidence for the Second Conduction Band in 4H SiC
journal, May 2017

Temperature- and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC
journal, June 2013

Near-infrared free carrier absorption in heavily doped silicon
journal, August 2014

Free-carrier absorption in $n$ -type semiconductors: The inelastic scattering of electrons from ionized impurities
journal, November 1978

Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC
journal, July 2001

Calculated and measured reflectivity of some p -type SiC polytypes
journal, April 2002

Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
journal, May 2000

Parameterization of Free Carrier Absorption in Highly Doped Silicon for Solar Cells
journal, July 2013

The optical absorption bands and their anisotropy in the various modifications of SiC
journal, October 1965

Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection
journal, May 2000

Excitation and temperature dependent exciton-carrier transport in CVD diamond: Diffusion coefficient, recombination lifetime and diffusion length
journal, April 2017

Optical-absorption bands in the 1–3 eV range in n -type SiC polytypes
journal, May 1999

New contactless method for carrier diffusion measurements in silicon with a high precision
journal, July 1991

Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques
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Quantum theory of free carrier absorption in polar semiconductors
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Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition
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journal, December 1997

Free carrier absorption and lifetime mapping in 4H SiC epilayers
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Anisotropy of free-carrier absorption and diffusivity in m-plane GaN
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