Intrinsic shape of free carrier absorption spectra in 4H-SiC

Grivickas, P.; Redeckas, K.; Gulbinas, K.; Conway, A. M.; Voss, L. F.; Bora, M.; Sampayan, S.; Vengris, M.; Grivickas, V.

doi:10.1063/1.5095161

Title: Intrinsic shape of free carrier absorption spectra in 4H-SiC

Journal Article · 14 June 2019 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5095161 · OSTI ID:1548396

^[1]; Redeckas, K. ^[2]; Gulbinas, K. ^[2]; Conway, A. M. ^[1]; Voss, L. F. ^[1]; Bora, M. ^[1]; Sampayan, S. ^[1]; Vengris, M. ^[2];

^[2]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Vilnius Univ., Vilnius (Lithuania)

Free carrier absorption spectra are measured along the different polarization directions with respect to the c-axis of 4H-SiC using ultrafast differential transmission spectroscopy. Probing of excited carrier spectra in an undoped material reveals intrinsic resonances within the conduction band. Widths of the detected resonance peaks are shown to be wider than their theoretical estimates and more comparable to the ones observed in a low doped material. Relative strength of the peaks, on the other hand, is shown to be nearly excitation independent in contrast to the doping induced absorption weakening for the same transitions in n-type samples. Finally, free carrier cross sections are extracted from the excitation dependency of the detected spectra and linked to the individual electron and hole contributions in the near infrared range.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1548396

Report Number(s):: LLNL-JRNL--761383; 949302

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 22 Vol. 125; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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