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Title: Intrinsic shape of free carrier absorption spectra in 4H-SiC

Abstract

Free carrier absorption spectra are measured along the different polarization directions with respect to the c-axis of 4H-SiC using ultrafast differential transmission spectroscopy. Probing of excited carrier spectra in an undoped material reveals intrinsic resonances within the conduction band. Widths of the detected resonance peaks are shown to be wider than their theoretical estimates and more comparable to the ones observed in a low doped material. Relative strength of the peaks, on the other hand, is shown to be nearly excitation independent in contrast to the doping induced absorption weakening for the same transitions in n-type samples. Finally, free carrier cross sections are extracted from the excitation dependency of the detected spectra and linked to the individual electron and hole contributions in the near infrared range.

Authors:
ORCiD logo [1];  [2];  [2];  [1];  [1];  [1];  [1];  [2]; ORCiD logo [2]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Vilnius Univ., Vilnius (Lithuania)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1548396
Alternate Identifier(s):
OSTI ID: 1525494
Report Number(s):
LLNL-JRNL-761383
Journal ID: ISSN 0021-8979; 949302
Grant/Contract Number:  
AC52-07NA27344; 17-ERD-050
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 125; Journal Issue: 22; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Grivickas, P., Redeckas, K., Gulbinas, K., Conway, A. M., Voss, L. F., Bora, M., Sampayan, S., Vengris, M., and Grivickas, V. Intrinsic shape of free carrier absorption spectra in 4H-SiC. United States: N. p., 2019. Web. doi:10.1063/1.5095161.
Grivickas, P., Redeckas, K., Gulbinas, K., Conway, A. M., Voss, L. F., Bora, M., Sampayan, S., Vengris, M., & Grivickas, V. Intrinsic shape of free carrier absorption spectra in 4H-SiC. United States. doi:10.1063/1.5095161.
Grivickas, P., Redeckas, K., Gulbinas, K., Conway, A. M., Voss, L. F., Bora, M., Sampayan, S., Vengris, M., and Grivickas, V. Fri . "Intrinsic shape of free carrier absorption spectra in 4H-SiC". United States. doi:10.1063/1.5095161.
@article{osti_1548396,
title = {Intrinsic shape of free carrier absorption spectra in 4H-SiC},
author = {Grivickas, P. and Redeckas, K. and Gulbinas, K. and Conway, A. M. and Voss, L. F. and Bora, M. and Sampayan, S. and Vengris, M. and Grivickas, V.},
abstractNote = {Free carrier absorption spectra are measured along the different polarization directions with respect to the c-axis of 4H-SiC using ultrafast differential transmission spectroscopy. Probing of excited carrier spectra in an undoped material reveals intrinsic resonances within the conduction band. Widths of the detected resonance peaks are shown to be wider than their theoretical estimates and more comparable to the ones observed in a low doped material. Relative strength of the peaks, on the other hand, is shown to be nearly excitation independent in contrast to the doping induced absorption weakening for the same transitions in n-type samples. Finally, free carrier cross sections are extracted from the excitation dependency of the detected spectra and linked to the individual electron and hole contributions in the near infrared range.},
doi = {10.1063/1.5095161},
journal = {Journal of Applied Physics},
number = 22,
volume = 125,
place = {United States},
year = {2019},
month = {6}
}

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Works referenced in this record:

Theory of Free-Carrier Infrared Absorption in GaAs
journal, August 1986


Proof-of-concept framework to separate recombination processes in thin silicon wafers using transient free-carrier absorption spectroscopy
journal, March 2015

  • Siah, S. C.; Winkler, M. T.; Powell, D. M.
  • Journal of Applied Physics, Vol. 117, Issue 10
  • DOI: 10.1063/1.4914160

New Evidence for the Second Conduction Band in 4H SiC
journal, May 2017


Temperature- and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC
journal, June 2013


Near-infrared free carrier absorption in heavily doped silicon
journal, August 2014

  • Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di
  • Journal of Applied Physics, Vol. 116, Issue 6
  • DOI: 10.1063/1.4893176

Free-carrier absorption in n -type semiconductors: The inelastic scattering of electrons from ionized impurities
journal, November 1978


Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC
journal, July 2001

  • Galeckas, A.; Linnros, J.; Frischholz, M.
  • Applied Physics Letters, Vol. 79, Issue 3
  • DOI: 10.1063/1.1385588

Calculated and measured reflectivity of some p -type SiC polytypes
journal, April 2002

  • Ismail, Adnan M.; Abu-Safia, Hassan
  • Journal of Applied Physics, Vol. 91, Issue 7
  • DOI: 10.1063/1.1456960

Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
journal, May 2000


Parameterization of Free Carrier Absorption in Highly Doped Silicon for Solar Cells
journal, July 2013

  • Rudiger, Marc; Greulich, Johannes; Richter, Armin
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 7
  • DOI: 10.1109/TED.2013.2262526

The optical absorption bands and their anisotropy in the various modifications of SiC
journal, October 1965


Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection
journal, May 2000


Optical-absorption bands in the 1–3 eV range in n -type SiC polytypes
journal, May 1999

  • Limpijumnong, Sukit; Lambrecht, Walter R. L.; Rashkeev, Sergey N.
  • Physical Review B, Vol. 59, Issue 20
  • DOI: 10.1103/PhysRevB.59.12890

New contactless method for carrier diffusion measurements in silicon with a high precision
journal, July 1991

  • Grivickas, Vytautas; Linnros, Jan
  • Applied Physics Letters, Vol. 59, Issue 1
  • DOI: 10.1063/1.105526

Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques
journal, January 2018

  • Ščajev, Patrik; Miasojedovas, Saulius; Mekys, Algirdas
  • Journal of Applied Physics, Vol. 123, Issue 2
  • DOI: 10.1063/1.5010780

Quantum theory of free carrier absorption in polar semiconductors
journal, October 1973


Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition
journal, November 1995

  • Kimoto, T.; Itoh, A.; Matsunami, H.
  • Applied Physics Letters, Vol. 67, Issue 19
  • DOI: 10.1063/1.114800

Auger recombination in 4H-SiC: Unusual temperature behavior
journal, December 1997

  • Galeckas, A.; Linnros, J.; Grivickas, V.
  • Applied Physics Letters, Vol. 71, Issue 22
  • DOI: 10.1063/1.120309

Free carrier absorption and lifetime mapping in 4H SiC epilayers
journal, April 1997

  • Galeckas, A.; Grivickas, V.; Linnros, J.
  • Journal of Applied Physics, Vol. 81, Issue 8
  • DOI: 10.1063/1.365050

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN
journal, January 2012

  • Ščajev, P.; Jarašiūnas, K.; Özgür, Ü.
  • Applied Physics Letters, Vol. 100, Issue 2
  • DOI: 10.1063/1.3674306

Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
journal, September 2003


Carrier dynamics and photoelectrical parameters in highly compensated sublimation grown 3C-SiC layers studied by time-resolved nonlinear optical techniques
journal, December 2013


Determination of charge carrier concentration in n - and p -doped SiC based on optical absorption measurements
journal, January 2002

  • Weingärtner, R.; Wellmann, P. J.; Bickermann, M.
  • Applied Physics Letters, Vol. 80, Issue 1
  • DOI: 10.1063/1.1430262

Dynamics of free carrier absorption in InN layers
journal, October 2009

  • Nargelas, S.; Aleksiejūnas, R.; Vengris, M.
  • Applied Physics Letters, Vol. 95, Issue 16
  • DOI: 10.1063/1.3251077

Free carrier absorption in heavily doped silicon layers
journal, March 2004

  • Isenberg, Joerg; Warta, Wilhelm
  • Applied Physics Letters, Vol. 84, Issue 13
  • DOI: 10.1063/1.1690105

Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence
journal, July 1998

  • Linnros, Jan
  • Journal of Applied Physics, Vol. 84, Issue 1
  • DOI: 10.1063/1.368024

Time-resolved measurement of free carrier absorption, diffusivity, and internal quantum efficiency in silicon
journal, August 2013

  • Meitzner, Jet; Moore, Frederick G.; Tillotson, Brock M.
  • Applied Physics Letters, Vol. 103, Issue 9
  • DOI: 10.1063/1.4819447