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Title: Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D) (OE-10)
OSTI Identifier:
1548126
Grant/Contract Number:  
2016YFA0300404
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Science Bulletin
Additional Journal Information:
Journal Name: Science Bulletin Journal Volume: 63 Journal Issue: 13; Journal ID: ISSN 2095-9273
Publisher:
Elsevier
Country of Publication:
China
Language:
English

Citation Formats

Hao, Zhenqi, Li, Haiwei, Zhang, Shunhong, Li, Xintong, Lin, Gaoting, Luo, Xuan, Sun, Yuping, Liu, Zheng, and Wang, Yayu. Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6. China: N. p., 2018. Web. doi:10.1016/j.scib.2018.05.034.
Hao, Zhenqi, Li, Haiwei, Zhang, Shunhong, Li, Xintong, Lin, Gaoting, Luo, Xuan, Sun, Yuping, Liu, Zheng, & Wang, Yayu. Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6. China. doi:10.1016/j.scib.2018.05.034.
Hao, Zhenqi, Li, Haiwei, Zhang, Shunhong, Li, Xintong, Lin, Gaoting, Luo, Xuan, Sun, Yuping, Liu, Zheng, and Wang, Yayu. Sun . "Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6". China. doi:10.1016/j.scib.2018.05.034.
@article{osti_1548126,
title = {Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6},
author = {Hao, Zhenqi and Li, Haiwei and Zhang, Shunhong and Li, Xintong and Lin, Gaoting and Luo, Xuan and Sun, Yuping and Liu, Zheng and Wang, Yayu},
abstractNote = {},
doi = {10.1016/j.scib.2018.05.034},
journal = {Science Bulletin},
number = 13,
volume = 63,
place = {China},
year = {2018},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.scib.2018.05.034

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Cited by: 2 works
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