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Title: An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer

Authors:
ORCiD logo; ; ; ; ; ; ORCiD logo; ORCiD logo; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1547923
Grant/Contract Number:  
EE0008086; SC0011385
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Nano Energy
Additional Journal Information:
Journal Name: Nano Energy Journal Volume: 57 Journal Issue: C; Journal ID: ISSN 2211-2855
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Wang, Yongjie, Vanka, Srinivas, Gim, Jiseok, Wu, Yuanpeng, Fan, Ronglei, Zhang, Yazhou, Shi, Jinwen, Shen, Mingrong, Hovden, Robert, and Mi, Zetian. An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer. Netherlands: N. p., 2019. Web. doi:10.1016/j.nanoen.2018.12.067.
Wang, Yongjie, Vanka, Srinivas, Gim, Jiseok, Wu, Yuanpeng, Fan, Ronglei, Zhang, Yazhou, Shi, Jinwen, Shen, Mingrong, Hovden, Robert, & Mi, Zetian. An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer. Netherlands. doi:10.1016/j.nanoen.2018.12.067.
Wang, Yongjie, Vanka, Srinivas, Gim, Jiseok, Wu, Yuanpeng, Fan, Ronglei, Zhang, Yazhou, Shi, Jinwen, Shen, Mingrong, Hovden, Robert, and Mi, Zetian. Fri . "An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer". Netherlands. doi:10.1016/j.nanoen.2018.12.067.
@article{osti_1547923,
title = {An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer},
author = {Wang, Yongjie and Vanka, Srinivas and Gim, Jiseok and Wu, Yuanpeng and Fan, Ronglei and Zhang, Yazhou and Shi, Jinwen and Shen, Mingrong and Hovden, Robert and Mi, Zetian},
abstractNote = {},
doi = {10.1016/j.nanoen.2018.12.067},
journal = {Nano Energy},
number = C,
volume = 57,
place = {Netherlands},
year = {2019},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 28, 2019
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