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Title: Recombination and bandgap engineering in CdSeTe/CdTe solar cells

Abstract

Selenium compositional grading in CdTe-based thin-film solar cells substantively improves carrier lifetime and performance. However, where and how recombination lifetime improves has not been studied significantly. Here, we deposit a CdSe xTe 1-x/CdTe bilayer on MgZnO/SnO 2/glass, which achieves a short-circuit current density greater than 28 mA/cm 2 and carrier lifetimes as long as 10-20 ns. We analyze the grain structure, composition, and recombination through the thickness of the absorber using electron backscatter diffraction, Auger-electron spectroscopy, cathodoluminescence spectrum imaging, and time-resolved photoluminescence microscopy. Despite small CdSeTe grains near the pn-junction and significantly larger CdTe grains in the rest of the film, both time-resolved photoluminescence and cathodoluminescence reveal that the carrier lifetime in CdSeTe alloy regions is longer than in CdTe regions. The results indicate that Se both passivates grain boundaries and improves grain-interior carrier lifetime. However, these effects occur only where there is significant alloying, which is important for bandgap engineering.

Authors:
 [1]; ORCiD logo [2];  [2]; ORCiD logo [2];  [2];  [2];  [2]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [2]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States); Univ. of Illinois, Chicago, IL (United States)
  2. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1547254
Report Number(s):
NREL/JA-5K00-73619
Journal ID: ISSN 2166-532X
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 7; Journal Issue: 7; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 25 ENERGY STORAGE; auger electron spectroscopy; time-resolved photoluminescence; semiconductors; lifetime spectroscopy; cathodoluminescence spectroscopy; solar cells; interfaces; electron backscatter diffraction; spectral imaging; crystallographic defects

Citation Formats

Zheng, Xin, Kuciauskas, Darius, Moseley, John, Colegrove, Eric M, Albin, David S, Moutinho, Helio R, Duenow, Joel N, Ablekim, Tursunjan, Harvey, Steven P, Ferguson, Andrew J, and Metzger, Wyatt K. Recombination and bandgap engineering in CdSeTe/CdTe solar cells. United States: N. p., 2019. Web. doi:10.1063/1.5098459.
Zheng, Xin, Kuciauskas, Darius, Moseley, John, Colegrove, Eric M, Albin, David S, Moutinho, Helio R, Duenow, Joel N, Ablekim, Tursunjan, Harvey, Steven P, Ferguson, Andrew J, & Metzger, Wyatt K. Recombination and bandgap engineering in CdSeTe/CdTe solar cells. United States. doi:10.1063/1.5098459.
Zheng, Xin, Kuciauskas, Darius, Moseley, John, Colegrove, Eric M, Albin, David S, Moutinho, Helio R, Duenow, Joel N, Ablekim, Tursunjan, Harvey, Steven P, Ferguson, Andrew J, and Metzger, Wyatt K. Mon . "Recombination and bandgap engineering in CdSeTe/CdTe solar cells". United States. doi:10.1063/1.5098459. https://www.osti.gov/servlets/purl/1547254.
@article{osti_1547254,
title = {Recombination and bandgap engineering in CdSeTe/CdTe solar cells},
author = {Zheng, Xin and Kuciauskas, Darius and Moseley, John and Colegrove, Eric M and Albin, David S and Moutinho, Helio R and Duenow, Joel N and Ablekim, Tursunjan and Harvey, Steven P and Ferguson, Andrew J and Metzger, Wyatt K},
abstractNote = {Selenium compositional grading in CdTe-based thin-film solar cells substantively improves carrier lifetime and performance. However, where and how recombination lifetime improves has not been studied significantly. Here, we deposit a CdSexTe1-x/CdTe bilayer on MgZnO/SnO2/glass, which achieves a short-circuit current density greater than 28 mA/cm2 and carrier lifetimes as long as 10-20 ns. We analyze the grain structure, composition, and recombination through the thickness of the absorber using electron backscatter diffraction, Auger-electron spectroscopy, cathodoluminescence spectrum imaging, and time-resolved photoluminescence microscopy. Despite small CdSeTe grains near the pn-junction and significantly larger CdTe grains in the rest of the film, both time-resolved photoluminescence and cathodoluminescence reveal that the carrier lifetime in CdSeTe alloy regions is longer than in CdTe regions. The results indicate that Se both passivates grain boundaries and improves grain-interior carrier lifetime. However, these effects occur only where there is significant alloying, which is important for bandgap engineering.},
doi = {10.1063/1.5098459},
journal = {APL Materials},
number = 7,
volume = 7,
place = {United States},
year = {2019},
month = {7}
}

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