Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon
Abstract
Crystalline oxide ferroelectric tunnel junctions allow persistent encoding of information in electric polarization, featuring nondestructive readout and scalability that can exceed current commercial high-speed, nonvolatile ferroelectric memories. Yet, the well-established fabrication of epitaxial devices on oxide substrates is difficult to adapt to silicon substrates for integration into complementary metal-oxide-semiconductor electronics. In this work, we report ferroelectric tunnel junctions based on 2.8 nm-thick BaTiO3 films grown epitaxially on SrTiO3 growth substrates, released, and relaminated onto silicon. The performance of the transferred devices is comparable to devices characterized on the oxide substrate, suggesting a viable route toward next-generation nonvolatile memories broadly integrable with different materials platforms.
- Authors:
-
[1];
[2];
- Stanford Univ., CA (United States)
- Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR)
- OSTI Identifier:
- 1547074
- Grant/Contract Number:
- GBMF4415; FA9550-18-1-0480; AC02-76SF00515
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 19; Journal Issue: 6; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; Nonvolatile memories; freestanding; oxides; ferroelectric tunnel junctions; pick and place
Citation Formats
Lu, Di, Crossley, Sam, Xu, Ruijuan, Hikita, Yasuyuki, and Hwang, Harold Y. Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon. United States: N. p., 2019.
Web. doi:10.1021/acs.nanolett.9b01327.
Lu, Di, Crossley, Sam, Xu, Ruijuan, Hikita, Yasuyuki, & Hwang, Harold Y. Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon. United States. https://doi.org/10.1021/acs.nanolett.9b01327
Lu, Di, Crossley, Sam, Xu, Ruijuan, Hikita, Yasuyuki, and Hwang, Harold Y. Tue .
"Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon". United States. https://doi.org/10.1021/acs.nanolett.9b01327. https://www.osti.gov/servlets/purl/1547074.
@article{osti_1547074,
title = {Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon},
author = {Lu, Di and Crossley, Sam and Xu, Ruijuan and Hikita, Yasuyuki and Hwang, Harold Y.},
abstractNote = {Crystalline oxide ferroelectric tunnel junctions allow persistent encoding of information in electric polarization, featuring nondestructive readout and scalability that can exceed current commercial high-speed, nonvolatile ferroelectric memories. Yet, the well-established fabrication of epitaxial devices on oxide substrates is difficult to adapt to silicon substrates for integration into complementary metal-oxide-semiconductor electronics. In this work, we report ferroelectric tunnel junctions based on 2.8 nm-thick BaTiO3 films grown epitaxially on SrTiO3 growth substrates, released, and relaminated onto silicon. The performance of the transferred devices is comparable to devices characterized on the oxide substrate, suggesting a viable route toward next-generation nonvolatile memories broadly integrable with different materials platforms.},
doi = {10.1021/acs.nanolett.9b01327},
journal = {Nano Letters},
number = 6,
volume = 19,
place = {United States},
year = {Tue May 28 00:00:00 EDT 2019},
month = {Tue May 28 00:00:00 EDT 2019}
}
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Works referencing / citing this record:
Giant Uniaxial Strain Ferroelectric Domain Tuning in Freestanding PbTiO 3 Films
journal, April 2020
- Han, Lu; Fang, Yanhan; Zhao, Yunqi
- Advanced Materials Interfaces, Vol. 7, Issue 7
Conductive Oxide Interfaces for Field Effect Devices
journal, June 2019
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Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier
journal, October 2019
- Wen, Zheng; Wu, Di
- Advanced Materials