Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon
- Stanford Univ., CA (United States)
- Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
Crystalline oxide ferroelectric tunnel junctions allow persistent encoding of information in electric polarization, featuring nondestructive readout and scalability that can exceed current commercial high-speed, nonvolatile ferroelectric memories. Yet, the well-established fabrication of epitaxial devices on oxide substrates is difficult to adapt to silicon substrates for integration into complementary metal-oxide-semiconductor electronics. In this work, we report ferroelectric tunnel junctions based on 2.8 nm-thick BaTiO3 films grown epitaxially on SrTiO3 growth substrates, released, and relaminated onto silicon. The performance of the transferred devices is comparable to devices characterized on the oxide substrate, suggesting a viable route toward next-generation nonvolatile memories broadly integrable with different materials platforms.
- Research Organization:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR)
- Grant/Contract Number:
- GBMF4415; FA9550-18-1-0480; AC02-76SF00515
- OSTI ID:
- 1547074
- Journal Information:
- Nano Letters, Vol. 19, Issue 6; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Giant Uniaxial Strain Ferroelectric Domain Tuning in Freestanding PbTiO 3 Films
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journal | April 2020 |
Conductive Oxide Interfaces for Field Effect Devices
|
journal | June 2019 |
Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier
|
journal | October 2019 |
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