Delta-doped SrTiO3 top-gated field effect transistor

Inoue, Hisashi; Yoon, Hyeok; Merz, Tyler A.; Swartz, Adrian G.; Hong, Seung Sae; Hikita, Yasuyuki; Hwang, Harold Y.

doi:10.1063/1.5090269

Title: Delta-doped SrTiO₃ top-gated field effect transistor

Journal Article · 13 June 2019 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5090269 · OSTI ID:1547071

Inoue, Hisashi ^[1]; Yoon, Hyeok ^[2]; Merz, Tyler A. ^[2]; Swartz, Adrian G. ^[2]; Hong, Seung Sae ^[2]; Hikita, Yasuyuki ^[3]; Hwang, Harold Y. ^[4]

Stanford Univ., CA (United States); Tohoku Univ., Sendai (Japan)
Stanford Univ., CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

Oxide heterostructures are an enticing platform for incorporation in field-effect transistors (FETs) due to their diverse physical properties which can be tuned by electrostatic gating. Here, we discuss a top-gated FET based on a SrTiO₃ delta-doped structure, which operates down to cryogenic temperatures. The device shows excellent DC characteristics with an on/off ratio greater than 10⁴ and field effect mobility estimated to be 2125 cm²/V s at 2 K. The high field effect mobility was consistent with the Hall mobility and is attributed to the formation of a two-dimensional electron system in the delta-doped layer: two-dimensional gate-tunable Shubnikov-de Haas oscillations confirm this. The achievement of an electron density of 3 × 10¹² cm^–2 in a gate-tunable geometry allows for the exploration of the interplay between magnetic, ferroelectric, and superconducting properties of SrTiO₃ in the quantum limit.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); USDOE

Grant/Contract Number:: DGE-114747; AC02-76SF00515; GBMF4415

OSTI ID:: 1547071

Alternate ID(s):: OSTI ID: 1526083

Journal Information:: Applied Physics Letters, Vol. 114, Issue 23; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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