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Title: Delta-doped SrTiO3 top-gated field effect transistor

Abstract

Oxide heterostructures are an enticing platform for incorporation in field-effect transistors (FETs) due to their diverse physical properties which can be tuned by electrostatic gating. Here, we discuss a top-gated FET based on a SrTiO3 delta-doped structure, which operates down to cryogenic temperatures. The device shows excellent DC characteristics with an on/off ratio greater than 104 and field effect mobility estimated to be 2125 cm2/V s at 2 K. The high field effect mobility was consistent with the Hall mobility and is attributed to the formation of a two-dimensional electron system in the delta-doped layer: two-dimensional gate-tunable Shubnikov-de Haas oscillations confirm this. The achievement of an electron density of 3 × 1012 cm–2 in a gate-tunable geometry allows for the exploration of the interplay between magnetic, ferroelectric, and superconducting properties of SrTiO3 in the quantum limit.

Authors:
 [1];  [2];  [2];  [2];  [2];  [3];  [4]
  1. Stanford Univ., CA (United States); Tohoku Univ., Sendai (Japan)
  2. Stanford Univ., CA (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); USDOE
OSTI Identifier:
1547071
Alternate Identifier(s):
OSTI ID: 1526083
Grant/Contract Number:  
DGE-114747; AC02-76SF00515; GBMF4415
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, and Hwang, Harold Y. Delta-doped SrTiO3 top-gated field effect transistor. United States: N. p., 2019. Web. doi:10.1063/1.5090269.
Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, & Hwang, Harold Y. Delta-doped SrTiO3 top-gated field effect transistor. United States. doi:10.1063/1.5090269.
Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, and Hwang, Harold Y. Thu . "Delta-doped SrTiO3 top-gated field effect transistor". United States. doi:10.1063/1.5090269. https://www.osti.gov/servlets/purl/1547071.
@article{osti_1547071,
title = {Delta-doped SrTiO3 top-gated field effect transistor},
author = {Inoue, Hisashi and Yoon, Hyeok and Merz, Tyler A. and Swartz, Adrian G. and Hong, Seung Sae and Hikita, Yasuyuki and Hwang, Harold Y.},
abstractNote = {Oxide heterostructures are an enticing platform for incorporation in field-effect transistors (FETs) due to their diverse physical properties which can be tuned by electrostatic gating. Here, we discuss a top-gated FET based on a SrTiO3 delta-doped structure, which operates down to cryogenic temperatures. The device shows excellent DC characteristics with an on/off ratio greater than 104 and field effect mobility estimated to be 2125 cm2/V s at 2 K. The high field effect mobility was consistent with the Hall mobility and is attributed to the formation of a two-dimensional electron system in the delta-doped layer: two-dimensional gate-tunable Shubnikov-de Haas oscillations confirm this. The achievement of an electron density of 3 × 1012 cm–2 in a gate-tunable geometry allows for the exploration of the interplay between magnetic, ferroelectric, and superconducting properties of SrTiO3 in the quantum limit.},
doi = {10.1063/1.5090269},
journal = {Applied Physics Letters},
number = 23,
volume = 114,
place = {United States},
year = {2019},
month = {6}
}

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