Delta-doped SrTiO3 top-gated field effect transistor
Abstract
Oxide heterostructures are an enticing platform for incorporation in field-effect transistors (FETs) due to their diverse physical properties which can be tuned by electrostatic gating. Here, we discuss a top-gated FET based on a SrTiO3 delta-doped structure, which operates down to cryogenic temperatures. The device shows excellent DC characteristics with an on/off ratio greater than 104 and field effect mobility estimated to be 2125 cm2/V s at 2 K. The high field effect mobility was consistent with the Hall mobility and is attributed to the formation of a two-dimensional electron system in the delta-doped layer: two-dimensional gate-tunable Shubnikov-de Haas oscillations confirm this. The achievement of an electron density of 3 × 1012 cm–2 in a gate-tunable geometry allows for the exploration of the interplay between magnetic, ferroelectric, and superconducting properties of SrTiO3 in the quantum limit.
- Authors:
-
- Stanford Univ., CA (United States); Tohoku Univ., Sendai (Japan)
- Stanford Univ., CA (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); USDOE
- OSTI Identifier:
- 1547071
- Alternate Identifier(s):
- OSTI ID: 1526083
- Grant/Contract Number:
- DGE-114747; AC02-76SF00515; GBMF4415
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 114; Journal Issue: 23; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Citation Formats
Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, and Hwang, Harold Y. Delta-doped SrTiO3 top-gated field effect transistor. United States: N. p., 2019.
Web. doi:10.1063/1.5090269.
Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, & Hwang, Harold Y. Delta-doped SrTiO3 top-gated field effect transistor. United States. https://doi.org/10.1063/1.5090269
Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, and Hwang, Harold Y. Thu .
"Delta-doped SrTiO3 top-gated field effect transistor". United States. https://doi.org/10.1063/1.5090269. https://www.osti.gov/servlets/purl/1547071.
@article{osti_1547071,
title = {Delta-doped SrTiO3 top-gated field effect transistor},
author = {Inoue, Hisashi and Yoon, Hyeok and Merz, Tyler A. and Swartz, Adrian G. and Hong, Seung Sae and Hikita, Yasuyuki and Hwang, Harold Y.},
abstractNote = {Oxide heterostructures are an enticing platform for incorporation in field-effect transistors (FETs) due to their diverse physical properties which can be tuned by electrostatic gating. Here, we discuss a top-gated FET based on a SrTiO3 delta-doped structure, which operates down to cryogenic temperatures. The device shows excellent DC characteristics with an on/off ratio greater than 104 and field effect mobility estimated to be 2125 cm2/V s at 2 K. The high field effect mobility was consistent with the Hall mobility and is attributed to the formation of a two-dimensional electron system in the delta-doped layer: two-dimensional gate-tunable Shubnikov-de Haas oscillations confirm this. The achievement of an electron density of 3 × 1012 cm–2 in a gate-tunable geometry allows for the exploration of the interplay between magnetic, ferroelectric, and superconducting properties of SrTiO3 in the quantum limit.},
doi = {10.1063/1.5090269},
journal = {Applied Physics Letters},
number = 23,
volume = 114,
place = {United States},
year = {2019},
month = {6}
}
Web of Science
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