Delta-doped SrTiO3 top-gated field effect transistor

Inoue, Hisashi; Yoon, Hyeok; Merz, Tyler A.; Swartz, Adrian G.; Hong, Seung Sae; Hikita, Yasuyuki; Hwang, Harold Y.

doi:10.1063/1.5090269

Title: Delta-doped SrTiO₃ top-gated field effect transistor

Abstract

Oxide heterostructures are an enticing platform for incorporation in field-effect transistors (FETs) due to their diverse physical properties which can be tuned by electrostatic gating. Here, we discuss a top-gated FET based on a SrTiO₃ delta-doped structure, which operates down to cryogenic temperatures. The device shows excellent DC characteristics with an on/off ratio greater than 10⁴ and field effect mobility estimated to be 2125 cm²/V s at 2 K. The high field effect mobility was consistent with the Hall mobility and is attributed to the formation of a two-dimensional electron system in the delta-doped layer: two-dimensional gate-tunable Shubnikov-de Haas oscillations confirm this. The achievement of an electron density of 3 × 10¹² cm^–2 in a gate-tunable geometry allows for the exploration of the interplay between magnetic, ferroelectric, and superconducting properties of SrTiO₃ in the quantum limit.

Authors:

Inoue, Hisashi ^[1]; Yoon, Hyeok ^[2]; Merz, Tyler A. ^[2]; Swartz, Adrian G. ^[2]; Hong, Seung Sae ^[2]; Hikita, Yasuyuki ^[3]; Hwang, Harold Y. ^[4]

Stanford Univ., CA (United States); Tohoku Univ., Sendai (Japan)
Stanford Univ., CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

Publication Date:: 2019-06-13

Research Org.:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); USDOE

OSTI Identifier:: 1547071

Alternate Identifier(s):: OSTI ID: 1526083

Grant/Contract Number:: DGE-114747; AC02-76SF00515; GBMF4415

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 114; Journal Issue: 23; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats


                    Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, and Hwang, Harold Y. Delta-doped SrTiO3 top-gated field effect transistor.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5090269.

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                    Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, & Hwang, Harold Y. Delta-doped SrTiO3 top-gated field effect transistor.  United States.  https://doi.org/10.1063/1.5090269

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                    Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, and Hwang, Harold Y. Thu .  
"Delta-doped SrTiO3 top-gated field effect transistor".  United States.  https://doi.org/10.1063/1.5090269.  https://www.osti.gov/servlets/purl/1547071.

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@article{osti_1547071,

  title        = {Delta-doped SrTiO3 top-gated field effect transistor},

  author       = {Inoue, Hisashi and Yoon, Hyeok and Merz, Tyler A. and Swartz, Adrian G. and Hong, Seung Sae and Hikita, Yasuyuki and Hwang, Harold Y.},

  abstractNote = {Oxide heterostructures are an enticing platform for incorporation in field-effect transistors (FETs) due to their diverse physical properties which can be tuned by electrostatic gating. Here, we discuss a top-gated FET based on a SrTiO3 delta-doped structure, which operates down to cryogenic temperatures. The device shows excellent DC characteristics with an on/off ratio greater than 104 and field effect mobility estimated to be 2125 cm2/V s at 2 K. The high field effect mobility was consistent with the Hall mobility and is attributed to the formation of a two-dimensional electron system in the delta-doped layer: two-dimensional gate-tunable Shubnikov-de Haas oscillations confirm this. The achievement of an electron density of 3 × 1012 cm–2 in a gate-tunable geometry allows for the exploration of the interplay between magnetic, ferroelectric, and superconducting properties of SrTiO3 in the quantum limit.},

  doi          = {10.1063/1.5090269},

  journal      = {Applied Physics Letters},

  number       = 23,

  volume       = 114,

  place        = {United States},

  year         = {2019},

  month        = {6}

}

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Title: Delta-doped SrTiO3 top-gated field effect transistor

Abstract

Citation Formats

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface journal, January 2004

Quantum longitudinal and Hall transport at the LaAlO3/SrTiO3 interface at low electron densities journal, November 2014

Observation of the quantum Hall effect in δ-doped SrTiO3 journal, May 2016

Superconducting Interfaces Between Insulating Oxides journal, August 2007

Magnetic effects at the interface between non-magnetic oxides journal, June 2007

Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface journal, September 2011

Coexistence of magnetic order and two-dimensional superconductivity at LaAlO3/SrTiO3 interfaces journal, September 2011

Two-dimensional normal-state quantum oscillations in a superconducting heterostructure journal, November 2009

Fermi Surface and Superconductivity in Low-Density High-Mobility δ -Doped SrTiO 3 journal, August 2011

Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator journal, September 2003

Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulator journal, July 2004

Low temperature metallic state induced by electrostatic carrier doping of SrTiO3 journal, September 2006

Electric field control of the LaAlO3/SrTiO3 interface ground state journal, December 2008

Field-effect devices utilizing LaAlO 3 -SrTiO 3 interfaces journal, January 2012

Gigahertz-frequency operation of a LaAlO 3 /SrTiO 3 -based nanotransistor journal, March 2013

Extreme charge density SrTiO 3 /GdTiO 3 heterostructure field effect transistors journal, June 2013

Transistor operation and mobility enhancement in top-gated LaAlO 3 /SrTiO 3 heterostructures journal, September 2013

Modulation of conductance and superconductivity by top-gating in LaAlO 3 /SrTiO 3 2-dimensional electron systems journal, November 2013

Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation journal, September 2014

A high-mobility electronic system at an electrolyte-gated oxide surface journal, March 2015

Nanoscale Electrostatic Control of Oxide Interfaces journal, March 2015

Magneto-transport study of top- and back-gated LaAlO 3 /SrTiO 3 heterostructures journal, June 2015

Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices journal, August 2015

Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from LaAlO 3 − SrTiO 3 -Based Heterostructures journal, December 2015

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface journal, March 2016

Enhancing the electron mobility via delta-doping in SrTiO3 journal, November 2010

Dramatic mobility enhancements in doped SrTiO3 thin films by defect management journal, July 2010

Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions journal, October 2010

Dielectric Properties of SrTi O 3 at Low Temperatures journal, April 1971

SrTi O 3 : An intrinsic quantum paraelectric below 4 K journal, April 1979

The delta-doped field-effect transistor (δFET) journal, May 1986

Delta-doped epitaxial La:SrTiO3 field-effect transistor journal, June 2011

Experimental Evidence of Cubic Rashba Effect in an Inversion-Symmetric Oxide journal, May 2012

Carrier density and disorder tuned superconductor-metal transition in a two-dimensional electron system journal, October 2018

Quantum capacitance devices journal, February 1988

Very Large Capacitance Enhancement in a Two-Dimensional Electron System journal, May 2011

Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO 3 journal, August 2008

Electron pairing without superconductivity journal, May 2015

Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO3 text, January 2008

Built-in and induced polarization across LaAlO$_3$/SrTiO$_3$ heterojunctions text, January 2010

Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management text, January 2010

Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface text, January 2011

Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces text, January 2012

Quantum longitudinal and Hall transport at the LaAlO3/SrTiO3 interface at low electron densities text, January 2014

Au-Gated SrTiO3 Field-Effect Transistors with Large Electron Concentration and Current Modulation text, January 2014

A high-mobility electronic system at an electrolyte-gated oxide surface text, January 2014

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator text, January 2003

Title: Delta-doped SrTiO₃ top-gated field effect transistor

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
journal, January 2004

Quantum longitudinal and Hall transport at the LaAlO3/SrTiO3 interface at low electron densities
journal, November 2014

Observation of the quantum Hall effect in δ-doped SrTiO3
journal, May 2016

Superconducting Interfaces Between Insulating Oxides
journal, August 2007

Magnetic effects at the interface between non-magnetic oxides
journal, June 2007

Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO₃/SrTiO₃ interface
journal, September 2011

Coexistence of magnetic order and two-dimensional superconductivity at LaAlO₃/SrTiO₃ interfaces
journal, September 2011

Two-dimensional normal-state quantum oscillations in a superconducting heterostructure
journal, November 2009

Fermi Surface and Superconductivity in Low-Density High-Mobility $δ$ -Doped ${SrTiO}_{3}$
journal, August 2011

Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator
journal, September 2003

Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulator
journal, July 2004

Low temperature metallic state induced by electrostatic carrier doping of SrTiO3
journal, September 2006

Electric field control of the LaAlO3/SrTiO3 interface ground state
journal, December 2008

Field-effect devices utilizing LaAlO ₃ -SrTiO ₃ interfaces
journal, January 2012

Gigahertz-frequency operation of a LaAlO ₃ /SrTiO ₃ -based nanotransistor
journal, March 2013

Extreme charge density SrTiO ₃ /GdTiO ₃ heterostructure field effect transistors
journal, June 2013

Transistor operation and mobility enhancement in top-gated LaAlO ₃ /SrTiO ₃ heterostructures
journal, September 2013

Modulation of conductance and superconductivity by top-gating in LaAlO ₃ /SrTiO ₃ 2-dimensional electron systems
journal, November 2013

Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation
journal, September 2014

A high-mobility electronic system at an electrolyte-gated oxide surface
journal, March 2015

Nanoscale Electrostatic Control of Oxide Interfaces
journal, March 2015

Magneto-transport study of top- and back-gated LaAlO ₃ /SrTiO ₃ heterostructures
journal, June 2015

Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices
journal, August 2015

Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from ${LaAlO}_{3} − {SrTiO}_{3}$ -Based Heterostructures
journal, December 2015

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface
journal, March 2016

Enhancing the electron mobility via delta-doping in SrTiO3
journal, November 2010

Dramatic mobility enhancements in doped SrTiO3 thin films by defect management
journal, July 2010

Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions
journal, October 2010

Dielectric Properties of SrTi $O_{3}$ at Low Temperatures
journal, April 1971

SrTi $O_{3}$ : An intrinsic quantum paraelectric below 4 K
journal, April 1979

The delta-doped field-effect transistor (δFET)
journal, May 1986

Delta-doped epitaxial La:SrTiO3 field-effect transistor
journal, June 2011

Experimental Evidence of Cubic Rashba Effect in an Inversion-Symmetric Oxide
journal, May 2012

Carrier density and disorder tuned superconductor-metal transition in a two-dimensional electron system
journal, October 2018

Quantum capacitance devices
journal, February 1988

Very Large Capacitance Enhancement in a Two-Dimensional Electron System
journal, May 2011

Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped ${SrTiO}_{3}$
journal, August 2008

Electron pairing without superconductivity
journal, May 2015

Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO3
text, January 2008

Built-in and induced polarization across LaAlO$_3$/SrTiO$_3$ heterojunctions
text, January 2010

Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management
text, January 2010

Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface
text, January 2011

Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces
text, January 2012

Quantum longitudinal and Hall transport at the LaAlO3/SrTiO3 interface at low electron densities
text, January 2014

Au-Gated SrTiO3 Field-Effect Transistors with Large Electron Concentration and Current Modulation
text, January 2014

A high-mobility electronic system at an electrolyte-gated oxide surface
text, January 2014

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator
text, January 2003