Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry
Abstract
We report on the observation of a field-induced magnetic bias effect in a Ga0.94Mn0.06As1-yPy thin film with digitally graded phosphorus content. Although phosphorus concentration in the sample is changed in steps from y approximate to 0.03 to y approximate to 0.28, the magnetometry and magnetotransport data display a coherent magnetic response typical for single-layer in-plane magnetized films with cubic and weak [110] uniaxial anisotropy. Unexpectedly, low-temperature planar Hall resistance loops exhibit remarkable asymmetry tunable by application of strong in-plane initial magnetic field HIni. We discuss this unusual memory effect, resembling the magnetization asymmetry in the exchange biased magnetic bilayers, in terms of a unidirectional bias field Hb induced by HIni. We show that such bias field defines the delayed or accelerated nucleation of domains with chiral domain walls performing the magnetization reversal.
- Authors:
-
- Univ. of Notre Dame, IN (United States); Argonne National Lab. (ANL), Argonne, IL (United States); Nanjing Univ. (China)
- Univ. of Notre Dame, IN (United States); Korea Univ., Seoul (Korea, Republic of)
- Univ. of Notre Dame, IN (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Korea Univ., Seoul (Korea, Republic of)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- National Science Foundation (NSF); National Natural Science Foundation of China (NSFC); National Key Research and Development Program of China; National Research Foundation of Korea (NRF); Ministry of Science, Information and Communications Technology (ICT) and Future Planning of Korea; USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1559286
- Alternate Identifier(s):
- OSTI ID: 1546486
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 7; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Dong, Sining, Wang, Yong-Lei, Bac, Seul-Ki, Liu, Xinyu, Vlasko-Vlasov, Vitalii, Kwok, Wai-Kwong, Rouvimov, Sergei, Lee, Sanghoon, Dobrowolska, Margaret, and Furdyna, Jacek K. Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry. United States: N. p., 2019.
Web. doi:10.1103/PhysRevMaterials.3.074407.
Dong, Sining, Wang, Yong-Lei, Bac, Seul-Ki, Liu, Xinyu, Vlasko-Vlasov, Vitalii, Kwok, Wai-Kwong, Rouvimov, Sergei, Lee, Sanghoon, Dobrowolska, Margaret, & Furdyna, Jacek K. Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry. United States. https://doi.org/10.1103/PhysRevMaterials.3.074407
Dong, Sining, Wang, Yong-Lei, Bac, Seul-Ki, Liu, Xinyu, Vlasko-Vlasov, Vitalii, Kwok, Wai-Kwong, Rouvimov, Sergei, Lee, Sanghoon, Dobrowolska, Margaret, and Furdyna, Jacek K. Fri .
"Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry". United States. https://doi.org/10.1103/PhysRevMaterials.3.074407. https://www.osti.gov/servlets/purl/1559286.
@article{osti_1559286,
title = {Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry},
author = {Dong, Sining and Wang, Yong-Lei and Bac, Seul-Ki and Liu, Xinyu and Vlasko-Vlasov, Vitalii and Kwok, Wai-Kwong and Rouvimov, Sergei and Lee, Sanghoon and Dobrowolska, Margaret and Furdyna, Jacek K.},
abstractNote = {We report on the observation of a field-induced magnetic bias effect in a Ga0.94Mn0.06As1-yPy thin film with digitally graded phosphorus content. Although phosphorus concentration in the sample is changed in steps from y approximate to 0.03 to y approximate to 0.28, the magnetometry and magnetotransport data display a coherent magnetic response typical for single-layer in-plane magnetized films with cubic and weak [110] uniaxial anisotropy. Unexpectedly, low-temperature planar Hall resistance loops exhibit remarkable asymmetry tunable by application of strong in-plane initial magnetic field HIni. We discuss this unusual memory effect, resembling the magnetization asymmetry in the exchange biased magnetic bilayers, in terms of a unidirectional bias field Hb induced by HIni. We show that such bias field defines the delayed or accelerated nucleation of domains with chiral domain walls performing the magnetization reversal.},
doi = {10.1103/PhysRevMaterials.3.074407},
journal = {Physical Review Materials},
number = 7,
volume = 3,
place = {United States},
year = {Fri Jul 19 00:00:00 EDT 2019},
month = {Fri Jul 19 00:00:00 EDT 2019}
}
Web of Science
Figures / Tables:
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Figures / Tables found in this record: