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Title: Putative hybridization gap in CaMn 2 Bi 2 under applied pressure

Abstract

Here, we study electrical transport measurements on CaMn 2 Bi 2 single crystals under applied pressure. At ambient pressure and high temperatures, CaMn 2 Bi 2 behaves as a single-band semimetal hosting Néel order at TN = 150 K. At low temperatures, multiband behavior emerges along with an activated behavior typical of degenerate semiconductors. The activation gap is estimated to be Δ~ 20 K. Applied pressure not only favors the antiferromagnetic order at a rate of 0.40(2) K/kbar, but it also enhances the activation gap at 20 kbar by about 70%. This gap enhancement is usual of correlated narrow-gap semiconductors such as FeSi and Ce3Bi4Pt3, and it places CaMn 2 Bi 2 as a Mn-based hybridization-gap semiconductor candidate. Ab initio calculations based on density functional theory are demonstrated to be insufficient to describe the ground state of CaMn 2 Bi 2 .

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3];  [2]; ORCiD logo [2];  [4]; ORCiD logo [2]
  1. Univ. of Campinas (UNICAMP), Sao Paulo (Brazil); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Univ. of California, Irvine, CA (United States)
  4. Univ. of Campinas (UNICAMP), Sao Paulo (Brazil)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1561083
Alternate Identifier(s):
OSTI ID: 1546428
Report Number(s):
LA-UR-19-28476
Journal ID: ISSN 2469-9950; PRBMDO; TRN: US2000588
Grant/Contract Number:  
89233218CNA000001
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 100; Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Moda Piva, Mario, Thomas, Sean Michael, Fisk, Zachary, Zhu, J. -X., Thompson, Joe David, Pagliuso, P. G., and Ferrari Silveira Rosa, Priscila. Putative hybridization gap in CaMn2Bi2 under applied pressure. United States: N. p., 2019. Web. doi:10.1103/PhysRevB.100.045108.
Moda Piva, Mario, Thomas, Sean Michael, Fisk, Zachary, Zhu, J. -X., Thompson, Joe David, Pagliuso, P. G., & Ferrari Silveira Rosa, Priscila. Putative hybridization gap in CaMn2Bi2 under applied pressure. United States. https://doi.org/10.1103/PhysRevB.100.045108
Moda Piva, Mario, Thomas, Sean Michael, Fisk, Zachary, Zhu, J. -X., Thompson, Joe David, Pagliuso, P. G., and Ferrari Silveira Rosa, Priscila. Mon . "Putative hybridization gap in CaMn2Bi2 under applied pressure". United States. https://doi.org/10.1103/PhysRevB.100.045108. https://www.osti.gov/servlets/purl/1561083.
@article{osti_1561083,
title = {Putative hybridization gap in CaMn2Bi2 under applied pressure},
author = {Moda Piva, Mario and Thomas, Sean Michael and Fisk, Zachary and Zhu, J. -X. and Thompson, Joe David and Pagliuso, P. G. and Ferrari Silveira Rosa, Priscila},
abstractNote = {Here, we study electrical transport measurements on CaMn2Bi2 single crystals under applied pressure. At ambient pressure and high temperatures, CaMn2Bi2 behaves as a single-band semimetal hosting Néel order at TN = 150 K. At low temperatures, multiband behavior emerges along with an activated behavior typical of degenerate semiconductors. The activation gap is estimated to be Δ~ 20 K. Applied pressure not only favors the antiferromagnetic order at a rate of 0.40(2) K/kbar, but it also enhances the activation gap at 20 kbar by about 70%. This gap enhancement is usual of correlated narrow-gap semiconductors such as FeSi and Ce3Bi4Pt3, and it places CaMn2Bi2 as a Mn-based hybridization-gap semiconductor candidate. Ab initio calculations based on density functional theory are demonstrated to be insufficient to describe the ground state of CaMn2Bi2.},
doi = {10.1103/PhysRevB.100.045108},
journal = {Physical Review B},
number = 4,
volume = 100,
place = {United States},
year = {Mon Jul 08 00:00:00 EDT 2019},
month = {Mon Jul 08 00:00:00 EDT 2019}
}

Journal Article:

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Cited by: 2 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) Comparison between the crystalline structure of CaMn2Bi2 and BaFe2As2. (b) c-axis view of the crystalline structure of CaMn2Bi2 and BaFe2As2. (c) Magnetic susceptibility as a function of temperature. The inset shows a picture of a typical single crystal. (d) Cp/T as a function of temperature. The insetmore » shows Cp/T as a function of T 2, at low temperatures.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.